In this paper, a novel wideband reflection type phase shifter (RTPS) for phased array antenna is proposed for the first time using commercial digitally tunable CMOS capacitor. The maximum relative phase shift obtained was about 95 degrees for digital input 00000 to 11111 at 2.8 GHz. The insertion loss in the pass band from 1.5 GHz to 3 GHz is 0.5 dB and the return loss is greater than 20 dB.

In this paper, a novel wideband reflection type phase shifter (RTPS) is developed for the first time using commercial BST capacitor on PCB technology. BST has a particular advantage of decoupling RF signal and DC biasing voltage which enables tuning of its ferroelectric permittivity without any DC blocking capacitor. The proposed phase shifter provides a phase shift of 103 degrees at 2.5GHz and a phase shift of 150 degrees at 3GHz, with an insertion loss of <1dB in the frequency range of 1GHz-3GHz. The phase shift is nearly constant from 2.5GHz to 3GHz for bias voltages between 4V and 20V. With increase in DC bias voltages from 4V to 20V, the phase shift increases from 35 degrees to 110 degrees in the frequency range of 2.5GHz-3GHz due to the non-linear variation of capacitance with voltage for the BST capacitor.

Due to commercial demand for higher transistor densities and more output power needed for transportation electrification, thermal conductivity of die attach and encapsulating material are becoming an essential concern with respect to IC packaging architectures. In this paper we are presenting the electrical properties of epoxy-diamond composite in order to use them as encapsulant material for front side heat removal from power devices and very large scale integrated circuits(VLSI). The low frequency capacitance studies show that the dielectric constant of the epoxy was found to decrease with increase in frequency from 10KHz to 1MHz. At 100kHz, the dielectric constant of epoxy was found to be 4.51 and for epoxydiamond composite the dielectric constant was 4.56. The dissipation factor for both films were found to be temperature dependent and the maximum dissipation was 0.035. High frequency characterization with network analyzer shows that both films show a dissipation factor of less than 0.05 up to 1.5 GHz. The current vs voltage measurements show that the leakage current increases with increase in temperature for both the samples.

In this paper, we are presenting the results of tunable combline band pass filter with continuous control of center frequency and band width. The tunable device has ferroelectric material BST (Barium Strontium Titanate) as the dielectric for the capacitor which has electric field dependent permittivity. Tuning of the center frequency is accomplished by changing the capacitance connected to one end of the microstrip resonator. This also results in increase in bandwidth with decrease in capacitance. By changing the coupling capacitance connected between the two resonators, the band width can be controlled. This gives the possibility of controlling the center frequency and bandwidth of the tunable combline filter.

This article demonstrates a novel passive equalizer topology for differential transmission lines, based on a ferroelectric capacitor. The use of this three-terminal commercial ferroelectric capacitor (STPTIC-27C4 from STMicroelectronics) offers the benefits of providing 1) miniaturized size; 2) higher dielectric constant; 3) bias polarity independent tuning; and 4) wide tuning range compared to its counterpart varactor. The design methodology of the proposed design is thoroughly discussed to compensate for any channel loss at any desired data rate. The equalization effect of the proposed topology is analyzed at the output of a $40''$ transmission line for a 5 Gbps data rate in both the frequency domain and time domain. Also, the impact of self-resonant frequency and ${Q}$ -factor of the reactive components is thoroughly discussed for the first time. Besides these, the effect of resistance is discussed in detail because it controls the low-frequency response (dc region). The initial proof-of-concept design is implemented for a maximum of 5 Gbps data transmission and measured results from the prototype are in good agreement with the simulation results. Finally, a prototype with the same ferroelectric capacitor model is built and validated to mitigate the ISI impact at the output of a $17''$ differential pair at a data rate of 12 Gbps.

In this paper, a tunable stub compensation technique with tunable ferroelectric capacitor is proposed for passive equalizer. Tunable stub provides flexibility to adjust the impedance of the transmission line depending on its length to improve the data transmission. ADS simulation shows that the frequency at which the insertion loss is minimum (Peak frequency) depends on the loading capacitance which can be controlled by the bias voltage applied to ferroelectric capacitor. The minimum insertion loss depends on the frequency and dissipation factor (AC resistance) of the capacitor.

This article presents a 5-Gb/s continuous-time linear equalizer (CTLE) for serial link interface where adaptive nature is achieved using a ferroelectric capacitor. This barium strontium titanate (BST)-based STPTIC-15G2 capacitor model from STMicroelectronics provides a smooth 5:1 tuning range for a voltage range of 0–18 V and eliminates the use of blocking capacitor required in case of varactor diode. The tunability of the high-pass filter response of the proposed CTLE provides the flexibility to meet the allocated loss budget of any serial link more precisely than a design with a discrete value capacitor. Also, its design methodology is much simpler than conventional MOSFET-based CTLE. Moreover, it avoids the use of complex algorithms seen in the case of digital equalization. For validation, the design is implemented on an FR4 board. While studying the data rate tolerance and channel tolerance of the printed prototype, the measured results closely match the simulation results. The compensation level of the equalizer is verified for an FR4 channel by varying its length from $7^{\prime \prime }$ to $28^{\prime \prime }$ which is equivalent to a change in insertion loss from 1.3 to 5.2 dB at 2.5 GHz, which is the Nyquist frequency for a 5-Gb/s signal. Also, for a $28^{\prime \prime }$ FR4 channel, a channel loss requirement of 8–9.5 dB is achievable by simply varying the applied bias to the ferroelectric capacitor from 0 to 10 V.

In this paper, the performance of a differential equalizer tuned with commercial BST capacitor is presented for the first time to improve signal integrity. The proposed equalizer is a RLC circuit where C is a 3 terminal BST capacitor supplied by manufacturer ‘STMicroelectronics’. The important features of a BST capacitor are- 1) tunability is independent of voltage polarity & 2) size is smaller than its counterparts for a given capacitance due to its high dielectric constant. The signal integrity is analyzed in terms of eye diagram at the output of a 40” lossy differential channel by using a 5Gb/s PRBS7 pattern and changing the bias to the BST capacitor.

This paper introduces a novel architecture of reconfigurable balanced (differential) dualband bandstop filter (BSF). In differential mode (DM), each symmetrical bisection of the filter incorporates in-series cascade of two tunable dualband bandstop sections whereas high CMRR is achieved by loading open stubs to the symmetry plane of the branch line structure. To validate the proposed topology, a microstrip prototype is designed and fabricated. Both simulation and measured results show a good agreement with each other.

An ultra-compact multi-band balanced (differential) bandstop filter (BSF) topology with all lumped elements has been introduced for the first time in this study. The proposed filter is a four-port structure where each symmetrical bisection is a series cascade of K N -band cells. Each N -band cell comprises of N parallel resonant circuits connected to the same node, through capacitors. K series-coupled N -band filter sections in the symmetrical bisection exhibit a K th order N -band BSF response in differential mode (DM) whereas common mode (CM) signal is minimally affected and maintains a high CM rejection ratio (CMRR). The advantages associated with this engineered structure can be summarised as follows: (i) it can be extrapolated to realise an arbitrary number of DM stopbands; (ii) it does not need any additional component in the symmetry plane to suppress the CM noise; and (iii) it occupies a very small area. For demonstration, a second-order dual-band differential BSF with resonant frequencies 1.15 and 1.36 GHz is designed and fabricated. It offers a rejection level of about 25 dB for each DM stopband and maintains a CMRR value of about 25 dB for both bands. Moreover, it covers an area of only 0.003 , where is the guided wavelength at the centre frequency between the two bands.

In this manuscript, the thermal effect on a lumped element balanced (differential) dualband band-stop filter (BSF) has been discussed in detail for the first time. The response of a novel filter should maintain consistency over a wide range of temperature. Although any microwave filter in general is designed for room temperature condition, the filter is employed for applications where the operating temperature constantly changes. Therefore, it is necessary to check the reliability of the filter response within a specific temperature range based on its application. Modern simulation software helps to make an initial assumption about the filter performance at different thermal conditions before its lab testing or actual application. Here, a quantitative analysis has been provided to show how change in temperature contributes to the change in each component value of a lumped element filter. This analysis is followed by a simulation to show that a balanced lumped element filter exhibits lower loss than its single-ended counterpart. Also, as the temperature varies, the balanced design demonstrates less deviation in the loss value than a two-port design. Next, a balanced dual-band BSF prototype with center frequencies 1.151 GHz and 1.366 GHz (25 degrees C) is characterized with a 4-port network analyzer under different temperature conditions. The experimental results exhibit a good match with the simulation results. For a variation of 80 degrees C in temperature, the maximum deviation obtained for the filter center frequency, absolute bandwidth (ABW), and insertion loss (Sdd21) are 5 MHz, 2.8 MHz and 2 dB, respectively.

In this paper, a novel architecture of passive adaptive differential equalizer is reported. The proposed architecture has a fixed PCB layout, yet it provides bandwidth control of the frequency response using a ferroelectric tunable capacitor. The equalizer circuit occupies an area of 5 mm 2 and demonstrates a wide tuning range of 1 GHz for a DC bias range of 1-10V.

A U-slot dual-band frequency reconfigurable patch antenna is presented in this paper. The resonant frequencies of the antenna before loading with varactors are 1.3 GHz and 2.4 GHz. The tunability is achieved using p-n varactors and ferroelectric tunable capacitors. It is found that individual tuning for both frequency bands is possible depending on the capacitor position. The maximum tuning range achieved for the first band is 600 MHz and the same for the second band is 422 MHz. The minimum and maximum gain values for the lower band are found to be 4.25 dBi and 4.95 dBi, respectively. Similarly, for the upper band, those values are obtained as 6.77 dBi and 7 dBi, respectively.

A novel and effective architecture of tunable multiband balanced bandstop filter (MBBSF) is introduced for the first time in this paper. Each symmetrical bisection of the proposed branch line structure consists of K series cascaded tunable N-band sections to realize a reconfigurable K-th order N-band response in differential mode (DM) operation. The main advantage lies on the fact that all these N bands can be tuned simultaneously or each band independently. Moreover, it maintains a high common mode rejection ratio (CMRR) for all the tuning states by incorporating open stubs in the symmetrical plane of the balanced structure. To validate the proposed topology, a balanced dualband tunable BSF is designed where the two DM stopbands tune in the range of 1.16GHz–1.29 GHz and 1.6GHz–1.76 GHz, respectively. The lower and upper bands maintain a constant absolute bandwidth (ABW) of 115MHz and 135MHz, respectively, and stopband rejection is better than 20 dB for each band. The fabricated prototype occupies an area of 0.31λg , and the experimental results show a good agreement with the simulation results.

In this paper, we are proposing a design of a spur line single and dual band bandstop filter.We designed, fabricated and characterized spurline filters in two notch frequencies, one at 3.25GHz and the other at 5.25GHz.The designed filters simulated using Keysight Technologies ADS software and fabricated on FR-4 substrates shows S11 of 1dB and S21 of 20 dB at notch frequency 3.165GHz and S11 of 2dB and S21 of 21dB at notch frequency 4.98 GHz.These two spurlines were combined to obtain dual band band stop filter resulting in S11 of 2dB and S21 of 25dB at notch frequency 3.038 GHz and S11 of 3db and S21 of 26dB at notch frequency 5.2GHz.

This paper discusses the design of full memory array utilizing the previously developed Verilog-A model for complementary resistance switching (CRS) device and including the peripheral circuitry such as bit line and word line drivers. This approach is viable and can be used in real circuits for memory applications.

Many of the Integrated Circuit (IC) solutions generated by GCI involve multi-chip module (MCM) types of layouts within the package cavity to emulate the original onolithic device (single die in package cavity), ultimately providing a form, fit, andfunctional drop -in replacement. These M(.71.1 architectures provide the greatest degree offlexibility when ensuring that the obsolete component's electrical requirements are met'. This paper will address the design, development, and manufacture of inter-cavity silicon interposer substrates, by GCI and the University of Colorado at Colorado Springs Electrical and Computer Engineering department (UCCS-ECE), that provide signal routing of the passive and active devices within the cavity to meet the functional requirements of older obsolete devices. In this manner, a wide array of newer generation components can be configured within the package cavity on these silicon interposer substrates to architect obsolescence solutions while also meeting the high -temperature requirements of the Au-Sn (gold/tin) lid solder seal processes (-340 C). Silicon substrates can also replace ceramic interposer versions, while meeting or exceeding pegiirmance requirements, decreasing lead times, and manufactured with more competitive costs.

Thermoacoustic devices were fabricated on flexible plastic substrates with few layer graphene films. The graphene films were grown by chemical vapor deposition on nickel and copper foil substrates, then transferred to the plastic substrates. A simple and reliable technique for electrical contact formation to the graphene was developed, using material from the nickel or copper growth substrate. The thermal and thermoacoustic behavior of the graphene thermophones was characterized as a function of the input electrical signal voltage and frequency, at frequencies up to 10 kHz. The average surface temperature of the device was measured under the same conditions using an infrared pyrometer. Accurate sound reproduction was demonstrated with graphene based thermoacoustic devices, including voice and music. The efficiency of the device is limited by the thermal quenching effect of the substrate. (C) 2018 Elsevier B.V. All rights reserved.