16Mb Split Gate Flash Memory with Improved Process Window

Jane Yater,M. Suhail,S. -T. Kang,J. Shen,C. Hong, T. Merchant,R. Rao,H. Gasquet,K. Loiko,B. Winstead,S. Williams,M. Rossow,W. Malloch,R. Syzdek,G. Chindalore

International Memory Workshop (IMW)（2009）

Freescale Semicond Inc

被引用5|浏览18

摘要

This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for nanocrystal memories and suggest a robust, reliable array operation.

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关键词

flash memories,nanostructured materials,nanotechnology,storage media,Si,bitcell optimizations,drive current,memory size 16 MByte,memory size 32 MByte,nanocrystal memories,process window,reliability,split gate flash memory