Oxide Variability Analysis Exploiting Greens Function Simulations

Aggressive downscaling of MosFET devices has some limitation due to short channel effects. These short channel effects affect the electronic behavior of device adversely. FinFET was proposed to overcome this shortcoming of MosFETs. But like MosFETs, FinFET have a problem of variability, which becomes more and more effective with the scaling. Variability analysis was the main theme of this research. Oxide thickness variations were taken into account for this research. 5%, 10% and 25% of variations were applied to oxide thickness and results were obtained for drain current, leakage current and threshold voltage. Synopsys Sentaurus as well as in-house simulator (Green's function simulation) were used for variability analysis. (C) 2021 INT TRANS J ENG MANAG SCI TECH.