Significant progress in modeling and manufacturing technologies open wide possibilities for performance improvements of millimeter-wave vacuum electron devices. However, many practical aspects should be considered to realize reliable long-life high-power sources. These are: thermal and RF stability, materials and assembly sensitivity to manufacturing, electrical stresses, cathode poisoning prevention, thermal beam effects, and many others. We address the full spectrum of design and manufacturing aspects while developing state-of-the-art extended interaction klystrons (EIKs). EIKs provide unprecedented RF performance and reliability in a compact user-friendly package. This paper discusses EIK design methodology and manufacturing concepts stating self-imposed restrictions and design modifications enhancing power capability, bandwidth, and extending operating frequencies into the terahertz region.
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