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    非达霉素在制备治疗登革病毒感染引起的相关疾病和/或症状的药物中的应用

    1102003012494B1
    发明人
    黎孟枫, 袁洁, 朱勋, 于暕辰
    受让人
    中山大学
    申请人
    Ian Revie, John Naybour
    申请号
    071720
    申请日
    2011-04-14
    公开(公告)号
    1102003012494B1
    公开(公告)日
    2016-10-17
    IPC分类号
    E05B065/12E05B001/00
    CPC分类号
    -
    优先权号
    16/101,045
    优先权日
    2018-08-09
    摘要

    NOVELTY - A taping apparatus of a lead frame is provided to enhance a working rate without failure by using a transfer controlling unit.

    DETAILED DESCRIPTION - A taping apparatus of a lead frame includes a loading unit, a transfer unit, a feeding unit, an unloading unit, and a transfer controlling unit. The loading unit(110) is used for loading lead frames. The transfer unit(120) is used for transferring sequentially the loaded lead frames. The feeding unit is installed across the transfer unit. The feeding unit is used for supplying a tape and fixing the tape to an inner lead of the lead frame. The unloading unit(140) is used for unloading the resultant lead frame. The transfer controlling unit is used for synchronizing the motion between the tape and the lead frame.

    权利要求
    1.a) 콘망봉틀나선이 장착된 자석; b) 상기 자석이 거치된 다공체, 파동체, 중공체; c) 상기 자석 내지 중공체 중 하나가 내부 또는 출구에 장착된 노즐, 타설기, 분사기, 주입기; d) 상기 자석 내지 주입기 중 하나를 이동시키는 드론, 3D프린터;e) 상기 분사기를 자신에 탑재하여 이동하면서 자화물을 분사하는 드론;f) 상기 타설기를 자신의 플로터에 거치하여 타설기를 이동시키는 3D프린터;g) 상기 중공체가 구비되어 중공체로부터 분출되는 타설재를 타설하는 드론; h) 상기 중공체 구비 타설기가 자신의 플로터에 구비되어 타설기로부터 분사되는 타설재를 타설하는 3D프린터; i) 상기 중공체 내지 3D프린터 중 하나에 호스를 통하여 압기를 공급하는 풍력콤프레셔; j) 상기 자석 내지 3D프린터, 자석의 하나인 전자석의 코일, 드론의 날개를 회전시키는 모터 중 하나에 전선을 통하여 전기를 공급하는 태양발전기, 풍력발전기;중 하나 이상이 구비되는 또는 하나 이상을 거친 자화, 와류, 자화와류 중 하나의 타설재가 타설되는 장비에 있어서,상기 콘망봉틀나선은 콘, 콘망봉, 콘틀나선, 콘망봉틀, 콘봉틀나선, 콘망봉틀나선, 콘-망-봉-틀-나선의 조합; 콘과 이의 콘 내부에 위치한 콘 형상의 망과 상기 망의 내부에 거치된 봉과 상기 콘의 외부에 위치하면서 상기 망의 올구멍보다 자신의 올구멍이 큰 콘 형상의 틀과 상기 콘, 망, 틀 중 하나의 일측에 위치한 나선으로 구성된 구성체; 중 하나 이상이고, 상기 콘은 다공 구멍이 형성된 다공형이고, 상기 콘망봉 내지 조합에 포함되는 콘도 다공형이고,상기 자석이 상기 콘의 중앙 통로에 관통되어 끼움되고,상기 타설재에는 CaMg, SiFe, MgSi, FeAl, CaMgSiFe, MgSiFeAl, CaMgSiFeAl 중 둘 이상이 포함되는 CaMgSiFeAl가 함유된 것을 특징으로 하는 장비
    2.콘망봉틀나선;상기 콘망봉틀나선이 구비된 튜브, 호스, 파이프, 중공관, 중공체, 자화기, 육각수기; 중 하나가 이용 또는 포함되는 장비로서, 상기 콘망봉틀나선은 하기 1, 2, 3, 4 중 하나이고, 상기 1은 콘(11)과 이의 콘 내부에 위치한 콘 형상의 망(48)과 상기 망의 내부에 거치된 봉(45)과 상기 콘의 외부에 위치하면서 상기 망의 올구멍보다 자신의 올구멍이 큰 콘 형상의 틀(46)과 상기 콘, 망, 틀 중 하나의 일측에 위치한 나선(47)으로 구성된 콘망봉틀나선이고, 상기 2는 a) 거치대(12)가 구비되고,상기 거치대에 순차적으로 콘(11), 망(48), 봉(45), 틀(46), 나선(47)이 구비되고,상기 콘 내지 나선 중 하나 이상에 자성체가 구비되고, 상기 자성체에 자력이 상이한 2개의 복수자석이 구비되어 조성된 콘망봉틀나선이고,상기 3은 상기 거치대에 순차적으로 나선(47), 틀(46), 봉(45), 망(48), 콘(11)이 구비되고,상기 나선 내지 콘 중 하나 이상에 자석이 라이닝된 자성체가 구비되고, 상기 자성체에 파동체가 구비되어 조성된 콘망봉틀나선이고,상기 4는 상기 콘은 다공 구멍이 형성된 다공형이고, 상기 망은 상기 틀(46)의 홀구멍 크기보다 작은 홀구멍을 가진 망(48)이고, 상기 봉은 경사진 또는 하기 자성체에 대하여 경사진 경사봉이고, 상기 틀은 다공 구멍이 형성된 콘형 틀이고, 상기 나선은 자신을 통과하는 물질을 와류, 폭기, 교반 중 하나를 하는 나선인 상기 콘망봉틀나선이고,상기 장비는 하기 장비 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 중 하나이고, 1) 상기 장비 1은 장비, 타설장비, 자화장비, 제조장비, 공사장비, 정화장비, 자화 타설장비, 자화와류 타설장비 중 하나이고,2) 상기 장비 2는 콘 또는 콘망봉틀나선이 장착된 자석; 이가 거치된 중공체; 이중 하나가 내부 또는 출구에 장착된 노즐, 타설기, 분사기, 주입기; 중 하나가 구비된 장비이고,3) 상기 장비 3은 상기 자석 내지 주입기 중 하나를 거친 자화, 와류, 자화와류 중 하나의 타설재가 타설되는 장비이고, 4) 상기 장비 4는 a) 조, 통, 함, 봉, 판, 막, 탱크, 박스, 수조, 튜브, 호스, 나선, 몸체, 물체, 블럭, 아연체, 금속체, 다공체, 파동체, 고분자체, 스크류, 파이프, 중공관, 중공체; b) 상기 자석이 투입된 조, 상기 자석이 투입된 통, 상기 자석이 투입된 함, 상기 자석이 부착된 봉, 상기 자석이 부착된 판, 상기 자석이 부착된 막, 상기 자석이 투입된 탱크, 상기 자석이 투입된 박스, 상기 중공체가 호스로 연결된 수조, 상기 노즐이 연결된 튜브, 상기 타설기가 연결된 호스, 상기 자석이 부착된 나선, 상기 자석이 부착된 몸체, 상기 자석이 장착된 물체, 상기 자석이 장착된 블럭, 상기 자석이 부착된 아연체, 상기 자석이 부착된 금속체, 상기 자석이 부착된 다공체, 상기 자석이 장착된 파동체, 상기 자석이 장착된 고분자체, 상기 자석이 장착된 스크류, 상기 주입기가 연결된 파이프, 상기 노즐이 연결된 중공관, 상기 자석이 투입된 중공체; c) 상기 자석이 투입 또는 부착된 상기 조 내지 중공체; d4) 상기 중공체 내지 주입기 중 하나와 호스 또는 연결수단으로 연결된 상기 조 내지 중공체; 중 하나이고, 5) 상기 장비 5는 a) 일단, 양단, 중간 중 하나 이상에 연결수단; b) 측면에 경사관, 인젝터, 체크밸브 구비 또는 첨가제 유입 인젝터; 중 하나 이상이 구비된 상기 조 내지 중공체 중 하나이고, 6) 상기 장비 6은 a) 저장고, 배합기, 가압기, 공급기 또는 공급로, 타설기, 분사기, 주입기, 주사기, 숏팅기, 코팅기, 도장기, 포설기, 포장기, 믹싱기, 다짐기; b) 타설재를 양생하는 양생기; c) 상기 양생 후 양생물을 면처리하는 면처리기; 중 하나이고, 7) 상기 장비 7은 타설재를 저장, 배합, 가압, 공급, 타설 또는 형틀타설, 분사 또는 사면분사, 주입 또는 지중주입, 주사 또는 균열주사, 숏팅 또는 녹숏팅, 코팅 또는 면코팅, 도장 또는 면도장, 포설 또는 지면포설, 포장 또는 노면포장, 믹싱 또는 지중믹싱, 다짐 또는 지중다짐 중 하나를 하는 상기 저장고 내지 다짐기 중 하나이고, 8) 상기 장비 8은 상기 조 내지 중공체, 저장고 내지 면처리기, 타설재 중 하나 이상에 호스를 통하여 압기를 주입하는 풍력콤프레셔이고, 상기 풍력콤프레셔는 1) 바람을 이용하여 압축공기를 생성하는 기구; 2) 또는 바람, 이에 의하여 회전하는 날개, 이 날개의 회전력, 이의 회전력에 의하여 회전운동을 하는 크랭크, 이의 크랭크에 거치되어 직선운동을 하는 로드, 이의 로드에 거치된 피스톤, 이의 피스톤이 내부에서 왕복운동하는 실린더, 상기 피스톤의 미는 힘에 의한 실린더 내부의 공기 압축, 이의 압축에 의하여 생성되는 압축공기, 이의 압축공기가 배출되는 실린더의 배출구, 이의 배출구에 연결된 호스 중 하나 이상으로 구성되는 기구; 3) 회전하는 풍력날개에 연계된 스크류 또는 회전직선변환기와 피스톤을 이용하여 압축공기를 생성하는 풍력콤프레셔, 풍력스크류콤프레셔, 풍력피스톤콤프레셔; 중 하나이고, 9) 상기 장비 9는 상기 저장고 내지 면처리기 중 하나 이상을 이동시키는 또는 하나 이상이 장착되는 또는 상기 장착에 의하여 상기 저장 내지 다짐, 양생, 면처리 중 하나를 하는 드론, 3D프린터 중 하나이고, 상기 드론은 a) a1) 날개, 회전날개, 프로펠러, 4개 프로펠러, 다수 프로펠러 중 하나와 본체로 구성된 드론; a2) 상부 날개 및 하부 본체로 구성된 드론; a3) 상기 본체의 비행을 위한 추력을 위하여 아래 방향의 하향류와 뒤 방향의 배향류를 생성하는 날개가 구비된 드론; a4) 상기 본체의 하부로 바람을 보내는 하향류에 의하여 상승 비행하는 드론; a5) 상기 본체의 후방으로 바람을 보내는 배향류에 의하여 수평 비행하는 드론; a6) 상기 하향류, 배향류에 의하여 3차원 비행하는 드론; g) 상기 날개 또는 프로펠러를 회전시키는 모터, 이의 모터에 연결된 전선, 이의 전선에 연계된 건전지, 충전기, 충전지, 플러그, 콘센트, 밧데리, 발전기, 태양전지, 태양발전기, 풍차, 풍력발전기 중 하나 이상기 구비된 드론; b) 또는 드론, 무인드론, 무인비행기; 회전날개에 의하여 비행하는 본체에 거치된 타설기 구비 드론; 천공기가 탑재되어 고층 건물에 균열보수용 보링공을 천공하는 드론; 분사기가 장착되어 고층 사면에 자화 숏크리트 분사하는 드론; 분사기가 장착되어 터널에 자화 분사수를 분사하여 터널 분진을 제거하는 드론; 포설기가 탑재되어 자화 포설수를 공중에 포설하여 공기를 청정시키는 드론; 중 하나이고, 상기 3D프린터는 a) 3D프린터, 3D프린팅기, 3D프린팅머신, 3D프린팅장치; b) 지면 또는 신축 시설의 주위에 거치된 프레임에 거치되면서 3차원 이동하는 타설기가 구비된 3D프린터; c) 프레임에 3차원 이동이 가능한 이동체가 탑재되어 3차원으로 이동하면서 배합기 또는 공급로로부터 공급되는 재료를 타설, 분사, 주입 중 하나를 하여 시설을 조성하는 3D프린터; d) 레일이 거치된 프레임과, 상기 레일을 따라 X축, Y축, Z축 방향으로 이동하는 이동체와, 상기 이동체에 설치되고 축조 재료를 분출하여 3D 구조물을 형성하는 플로터 또는 타설기와, 상기 플로터 또는 타설기에 압력을 제공하여 재료가 분출되도록 하는 펌프를 포함하는 3D프린터; e) 프레임에 지지되면서 이의 상부 좌우에 거치된 2개 레일a, 이에 각각 거치되면서 모터a에 의하여 회전하여 상기 레일a를 따라 전후 이동하는 2개 로라a, 이의 로라a 2개 사이에 구비된 레일b, 이의 레일b에 거치되면서 모터b에 의하여 회전하여 상기 레일b를 따라 이동하는 좌우 이동하는 1개 로라b, 이의 로라b에 거치되면서 모터c에 의하여 회전하는 회전체a에 감기거나 풀리면서 상하 이동하는 상하 이동부, 상기 상하 이동부에 장착되어 3차원 이동하는 타설기를 포함하는 3D프린터; 중 하나이고, 10) 상기 장비 10은 코일, 저장고 내지 면처리기, 드론, 3D프린터 중 하나 이상에 전선을 통하여 전기를 공급하는 발전기, 이동발전기, 태양발전기, 풍력발전기 중 하나이고, 상기 코일은 상기 자석의 하나인 철심에 코일이 감겨진 전자석에서의 상기 코일인 것을 특징으로 하는 장비
    3.A) a) 콘망봉틀나선이 장착된 튜브, 호스, 파이프, 중공관, 중공체, 자화기, 육각수기;b) 상기 콘망봉틀나선, 튜브 내지 육각수기 중 하나가 구비된 저장고(20), 호퍼(21), 혼합기(22), 펌프 또는 가압기(23), 운송기(24), 공급기 또는 공급로(25), 타설기(26), 분사기, 주입기, 주사기, 숏팅기, 코팅기, 도장기, 포설기, 포장기, 믹싱기, 다짐기, 양생기, 면처리기;c) 하기 수 내지 콘크리트 중 하나가 순차적으로 저장, 투입, 혼합, 가압, 운송, 공급, 타설, 분사, 주입, 주사, 숏팅, 코팅, 도장, 포설, 포장, 믹싱, 다짐, 양생, 면처리 중 하나가 되는 상기 저장고 내지 면처리기;d) 상기 저장고 내지 면처리기 중 둘 이상의 순서 또는 무순으로 구성된 장비, 제조 장비, 공사 장비, 정화 장비; e) 상기 콘망봉틀나선, 튜브 내지 육각수기, 저장고 내지 면처리기, 장비 중 하나 이상을 거친 수(水), 물, 액(液), 유(流), 약(藥), 기(氣), 고(固), 제(劑), 재(材), 졸, 겔, 물질, 몰탈, 밀크, 재료, 레미콘, 페이스트, 플라스터, 콘크리트; f) 상기 거치는 것에 더하여 Ca, Mg, Si, Fe, Me, Al, K, Na, CaMg, CaSi, CaFe, CaAl, MgSi, MgFe, MgAl, SiFe, SiAl, FeAl, CaMgSi, CaMgFe, CaMgAl, MgSiFe, MgSiAl, SiFeAl, CaMgSiFe, CaMgSiAl, MgSiFeAl, CaMgSiFeAl, KSiAl, NaSiAl, KNaSiAl 중 하나 이상이 함유된 상기 수 내지 콘크리트; g) 상기 거치는 것에 더하여 수지, 폐분, 광물, 황토, 화이버, 보강재, 나노재, 라텍스, 미생물, 부산물, 슬래그, 팽창제, 피톤치드, 제올라이트, 지오폴리머 중 하나 이상이 함유된 상기 수 내지 콘크리트; h) 상기 Ca 내지 KNaSiAl 중 하나 이상이 포함된 상기 수지 내지 지오폴리머 중 하나 이상이 함유된 상기 수 내지 콘크리트; 중 하나 이상이 이용 또는 포함되어 조성되거나,B) 또는 상기 콘망봉틀나선 내지 장비 중 하나 이상에 의하여 상기 수 내지 콘크리트 중 하나가 자화, 유동화, 저장, 투입, 혼합, 가압, 운송, 공급, 타설, 주입, 주사, 분사, 다짐, 믹싱, 양생, 면처리 중 하나 이상이 되어 조성된 자재로서,상기 콘망봉틀나선은 하기 1, 2, 3, 4 중 하나이고, 상기 1은 콘(11)과 이의 콘 내부에 위치한 콘 형상의 망(48)과 상기 망의 내부에 거치된 봉(45)과 상기 콘의 외부에 위치하면서 상기 망의 올구멍보다 자신의 올구멍이 큰 콘 형상의 틀(46)과 상기 콘, 망, 틀 중 하나의 일측에 위치한 나선(47)으로 구성된 콘망봉틀나선이고, 상기 2는 a) 거치대(12)가 구비되고,상기 거치대에 순차적으로 콘(11), 망(48), 봉(45), 틀(46), 나선(47)이 구비되고,상기 콘 내지 나선 중 하나 이상에 자성체가 구비되고, 상기 자성체에 자력이 상이한 2개의 복수자석이 구비되어 조성된 콘망봉틀나선이고,상기 3은 상기 거치대에 순차적으로 나선(47), 틀(46), 봉(45), 망(48), 콘(11)이 구비되고,상기 나선 내지 콘 중 하나 이상에 자석이 라이닝된 자성체가 구비되고, 상기 자성체에 파동체가 구비되어 조성된 콘망봉틀나선이고,상기 4는 상기 콘은 다공 구멍이 형성된 다공형이고, 상기 망은 상기 틀(46)의 홀구멍 크기보다 작은 홀구멍을 가진 망(48)이고, 상기 봉은 경사진 또는 하기 자성체에 대하여 경사진 경사봉이고, 상기 틀은 다공 구멍이 형성된 콘형 틀이고, 상기 나선은 자신을 통과하는 물질을 와류, 폭기, 교반 중 하나를 하는 나선인 상기 콘망봉틀나선이고,상기 자재는 a) 몰탈, 밀크, 약액, 현탁액, 슬러리, 배합물, 레미콘, 아스콘, 콘크리트, 페이스트, 플라스터, 보, 벽, 판, 관, 타일, 벽돌, 블럭, 매트, 보드, 거더, 슬라브, 암거, 박스, 탱크, 맨홀, 흄관, 수조, 기초, 기둥, 파일, 말뚝, 피어, 케이슨, 라이닝, 세그먼트, 내장재, 외장재, 건자재; b) 상기 몰탈 내지 플라스터 중 하나 함유 또는 양생의 상기 보 내지 건자재; c) 또는 건설, 건축, 토목, 조경, 조각, 조형, 환경, 공사, 시공, 개량, 보강, 보수, 보강, 포장, 인테리어, 리모델링, 시설, 건물, 구조물, 시설물 중 하나의 자재, 재료, 원료, 상기 몰탈 내지 내지 건자재; 중 하나인 것을 특징으로 하는 자재
    4.A) a) 콘망봉틀나선이 장착된 튜브, 호스, 파이프, 중공관, 중공체, 자화기, 육각수기;b) 상기 콘망봉틀나선, 튜브 내지 육각수기 중 하나가 구비된 저장고(20), 호퍼(21), 혼합기(22), 펌프 또는 가압기(23), 운송기(24), 공급기 또는 공급로(25), 타설기(26), 분사기, 주입기, 주사기, 숏팅기, 코팅기, 도장기, 포설기, 포장기, 믹싱기, 다짐기, 양생기, 면처리기;c) 하기 수 내지 콘크리트 중 하나가 순차적으로 저장, 투입, 혼합, 가압, 운송, 공급, 타설, 분사, 주입, 주사, 숏팅, 코팅, 도장, 포설, 포장, 믹싱, 다짐, 양생, 면처리 중 하나가 되는 상기 저장고 내지 면처리기;d) 상기 저장고 내지 면처리기 중 둘 이상의 순서 또는 무순으로 구성된 장비, 제조 장비, 공사 장비, 정화 장비; e) 상기 콘망봉틀나선, 튜브 내지 육각수기, 저장고 내지 면처리기, 장비 중 하나 이상을 거친 수(水), 물, 액(液), 유(流), 약(藥), 기(氣), 고(固), 제(劑), 재(材), 졸, 겔, 물질, 몰탈, 밀크, 재료, 레미콘, 페이스트, 플라스터, 콘크리트; f) 상기 거치는 것에 더하여 Ca, Mg, Si, Fe, Me, Al, K, Na, CaMg, CaSi, CaFe, CaAl, MgSi, MgFe, MgAl, SiFe, SiAl, FeAl, CaMgSi, CaMgFe, CaMgAl, MgSiFe, MgSiAl, SiFeAl, CaMgSiFe, CaMgSiAl, MgSiFeAl, CaMgSiFeAl, KSiAl, NaSiAl, KNaSiAl 중 하나 이상이 함유된 상기 수 내지 콘크리트; g) 상기 거치는 것에 더하여 수지, 폐분, 광물, 황토, 화이버, 보강재, 나노재, 라텍스, 미생물, 부산물, 슬래그, 팽창제, 피톤치드, 제올라이트, 지오폴리머 중 하나 이상이 함유된 상기 수 내지 콘크리트; h) 상기 Ca 내지 KNaSiAl 중 하나 이상이 포함된 상기 수지 내지 지오폴리머 중 하나 이상이 함유된 상기 수 내지 콘크리트; i) 상기 콘망봉틀나선 내지 장비 중 하나 이상에 의하여 상기 수 내지 콘크리트 중 하나가 자화, 유동화, 저장, 투입, 혼합, 가압, 운송, 공급, 타설, 주입, 주사, 분사, 다짐, 믹싱, 양생, 면처리 중 하나 이상이 되어 조성된 자재; 중 하나 이상이 이용 또는 포함되어 조성되거나,B) 상기 콘망봉틀나선 내지 장비 중 하나 이상에 의하여 상기 수 내지 콘크리트 중 하나가 상기 자화 내지 면처리 중 하나 이상이 되어 조성된 시설로서,상기 콘망봉틀나선은 하기 1, 2, 3, 4 중 하나이고, 상기 1은 콘(11)과 이의 콘 내부에 위치한 콘 형상의 망(48)과 상기 망의 내부에 거치된 봉(45)과 상기 콘의 외부에 위치하면서 상기 망의 올구멍보다 자신의 올구멍이 큰 콘 형상의 틀(46)과 상기 콘, 망, 틀 중 하나의 일측에 위치한 나선(47)으로 구성된 콘망봉틀나선이고, 상기 2는 a) 거치대(12)가 구비되고,상기 거치대에 순차적으로 콘(11), 망(48), 봉(45), 틀(46), 나선(47)이 구비되고,상기 콘 내지 나선 중 하나 이상에 자성체가 구비되고, 상기 자성체에 자력이 상이한 2개의 복수자석이 구비되어 조성된 콘망봉틀나선이고,상기 3은 상기 거치대에 순차적으로 나선(47), 틀(46), 봉(45), 망(48), 콘(11)이 구비되고,상기 나선 내지 콘 중 하나 이상에 자석이 라이닝된 자성체가 구비되고, 상기 자성체에 파동체가 구비되어 조성된 콘망봉틀나선이고,상기 4는 상기 콘은 다공 구멍이 형성된 다공형이고, 상기 망은 상기 틀(46)의 홀구멍 크기보다 작은 홀구멍을 가진 망(48)이고, 상기 봉은 경사진 또는 하기 자성체에 대하여 경사진 경사봉이고, 상기 틀은 다공 구멍이 형성된 콘형 틀이고, 상기 나선은 자신을 통과하는 물질을 와류, 폭기, 교반 중 하나를 하는 나선인 상기 콘망봉틀나선이고,상기 시설은 집, 댐, 기초, 파일, 지반, 사면, 주택, 건물, 도로, 보도, 포장, 제방, 교량, 터널, 옹벽, 항만, 시설, 구조물, 시설물, 공동주택, 조립주택, 케노피건물, 케노피주택, 이동주택, 컨테이너주택, 농장건물, 식물농장건물, 수처리시설물, 폐수처리시설물, 정화시설물 중 하나인 것을 특징으로 하는 시설
    5.A) a) 콘망봉틀나선이 튜브, 호스, 파이프, 중공관, 중공체, 자화기, 육각수기 중 하나에 거치되고, b) 상기 콘망봉틀나선, 튜브 내지 육각수기 중 하나가 저장고(20), 호퍼(21), 혼합기(22), 펌프(23), 운송기(24), 공급로(25), 타설기(26), 주입기, 믹싱기, 다짐기, 양생기, 면처리기 중 하나 이상에 구비되고,c) 상기 저장고 내지 면처리기 중 둘 이상이 상기 열거순 또는 무순으로 구성된 장비가 구비되고, d) 상기 저장고(20)에서 재료가 저장;상기 호퍼(21)에 의하여 혼합기(22)에 재료가 투입;상기 혼합기(22)에 의하여 재료가 혼합;상기 펌프(23)에 의하여 재료가 가압, 압송, 펌핑, 공급, 제공;상기 운송기(24)에 의하여 재료가 운송, 이송, 공급, 제공;상기 공급로(25)에 의하여 재료가 공급, 제공; 중 하나 이상이 되고,e) 상기 타설기(26)에 의하여 재료가 타설, 인젝션, 그라우팅, 형틀에 타설, 공장에서 타설, 현장에서 타설, 기초 공사를 위하여 타설; 상기 주입기에 의하여 의하여 재료가 주입, 지중주입; 상기 다짐기에 의하여 의하여 재료가 다짐, 지중다짐;상기 믹싱기에 의하여 의하여 재료가 믹싱, 지중믹싱; 상기 양생기에 의하여 상기 타설된 재료가 양생; 상기 면처리기에 의하여
    说明书
    [0001]RELATED APPLICATION INFORMATION
    [0002]This patent is a continuation of application Ser. No. 16/930,534, filed Jul. 16, 2020, entitled TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH PERIODIC ETCHED HOLES, which claims priority from provisional patent application 62/874,709, filed Jul. 16, 2019, entitled XBAR WITH SLANTED AND/OR PERFORATED MEMBRANE.
    [0003]patent application Ser. No. 16/930,534 is also a continuation in part of application Ser. No. 16/689,707, entitled BANDPASS FILTER WITH FREQUENCY SEPARATION BETWEEN SHUNT AND SERIES RESONATORS SET BY DIELECTRIC LAYER THICKNESS, filed Nov. 20, 2019, which is a continuation of application Ser. No. 16/230,443, entitled TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR, filed Dec. 21, 2018, now U.S. Pat. No. 10,491,192, issued Nov. 26, 2019, which claims priority from the following provisional patent applications: application 62/685,825, filed Jun. 15, 2018,entitled SHEAR-MODE FBAR (XBAR); application 62/701,363, filed Jul. 20, 2018, entitled SHEAR-MODE FB AR (XBAR); application 62/741,702, filed Oct. 5, 2018, entitled 5 GHZ LATERALLY-EXCITED BULK WAVE RESONATOR (XBAR); application 62/748,883, filed Oct. 22, 2018, entitled SHEAR-MODE FILM BULK ACOUSTIC RESONATOR, and application 62/753,815, filed Oct. 31, 2018, entitled LITHIUM TANTALATE SHEAR-MODE FILM BULK ACOUSTIC RESONATOR. All of these applications are incorporated herein by reference.
    [0004]NOTICE OF COPYRIGHTS AND TRADE DRESS
    [0005]A portion of the disclosure of this patent document contains material which is subject to copyright protection. This patent document may show and/or describe matter which is or may become trade dress of the owner. The copyright and trade dress owner has no objection to the facsimile reproduction by anyone of the patent disclosure as it appears in the Patent and Trademark Office patent files or records, but otherwise reserves all copyright and trade dress rights whatsoever.
    [0006]BACKGROUND
    [0007]Field
    [0008]This disclosure relates to radio frequency filters using acoustic wave resonators, and specifically to bandpass filters with high power capability for use in communications equipment.
    [0009]Description of the Related Art
    [0010]A radio frequency (RF) filter is a two-port device configured to pass some frequencies and to stop other frequencies, where “pass” means transmit with relatively low signal loss and “stop” means block or substantially attenuate. The range of frequencies passed by a filter is referred to as the “pass-band” of the filter. The range of frequencies stopped by such a filter is referred to as the “stop-band” of the filter. A typical RF filter has at least one pass-band and at least one stop-band. Specific requirements on a pass-band or stop-band depend on the specific application. For example, a “pass-band” may be defined as a frequency range where the insertion loss of a filter is less than a defined value such as 1 dB, 2 dB, or 3 dB. A “stop-band” may be defined as a frequency range where the rejection of a filter is greater than a defined value such as 20 dB, 30 dB, 40 dB, or greater depending on application.
    [0011]RF filters are used in communications systems where information is transmitted over wireless links. For example, RF filters may be found in the RF front-ends of cellular base stations, mobile telephone and computing devices, satellite transceivers and ground stations, IoT (Internet of Things) devices, laptop computers and tablets, fixed point radio links, and other communications systems. RF filters are also used in radar and electronic and information warfare systems.
    [0012]RF filters typically require many design trade-offs to achieve, for each specific application, the best compromise between performance parameters such as insertion loss, rejection, isolation, power handling, linearity, size, and cost. Specific design and manufacturing methods and enhancements can benefit simultaneously one or several of these requirements.
    [0013]Performance enhancements to the RF filters in a wireless system can have broad impact to system performance. Improvements in RF filters can be leveraged to provide system performance improvements such as larger cell size, longer battery life, higher data rates, greater network capacity, lower cost, enhanced security, higher reliability, etc. These improvements can be realized at many levels of the wireless system both separately and in combination, for example at the RF module, RF transceiver, mobile or fixed sub-system, or network levels.
    [0014]High performance RF filters for present communication systems commonly incorporate acoustic wave resonators including surface acoustic wave (SAW) resonators, bulk acoustic wave (BAW) resonators, film bulk acoustic wave resonators (FBAR), and other types of acoustic resonators. However, these existing technologies are not well-suited for use at the higher frequencies proposed for future communications networks.
    [0015]The desire for wider communication channel bandwidths will inevitably lead to the use of higher frequency communications bands. Radio access technology for mobile telephone networks has been standardized by the 3GPP (3 rd Generation Partnership Project). Radio access technology for 5 th generation mobile networks is defined in the 5G NR (new radio) standard. The 5G NR standard defines several new communications bands. Two of these new communications bands are n77, which uses the frequency range from 3300 MHz to 4200 MHz, and n79, which uses the frequency range from 4400 MHz to 5000 MHz. Both band n77 and band n79 use time-division duplexing (TDD), such that a communications device operating in band n77 and/or band n79 uses the same frequencies for both uplink and downlink transmissions. Bandpass filters for bands n77and n79 must be capable of handling the transmit power of the communications device. The 5G NR standard also defines millimeter wave communication bands with frequencies between 24.25 GHz and 40 GHz.
    [0016]DESCRIPTION OF THE DRAWINGS FIG. 1 includes a schematic plan view and two schematic cross-sectional views of a transversely-excited film bulk acoustic resonator (XBAR). FIG. 2 is an expanded schematic cross-sectional view of a portion of the XBAR of FIG. 1 . FIG. 3A is an alternative schematic cross-sectional view of the XBAR of FIG. 1 . FIG. 3B is another alternative schematic cross-sectional view of the XB AR of FIG. 1 . FIG. 4 is a graphic illustrating a primary acoustic mode in an XBAR. FIG. 5 is a plan view of an XBAR with periodic etched holes. FIG. 6 is a graph of the conductance versus frequency for XBARs with and without periodic etched holes. FIG. 7 is a plan view of another interdigital transducer with periodic etched holes. FIG. 8 is a graph of the conductance versus frequency for XBARs with and without periodic etched holes. FIG. 9 is a flow chart of a process for fabricating an XBAR with periodic etched holes.
    [0017]Throughout this description, elements appearing in figures are assigned three-digit or four-digit reference designators, where the two least significant digits are specific to the element and the one or two most significant digit is the figure number where the element is first introduced. An element that is not described in conjunction with a figure may be presumed to have the same characteristics and function as a previously-described element having the same reference designator.
    [0018]DETAILED DESCRIPTION
    [0019]Description of Apparatus
    [0020]FIG. 1 shows a simplified schematic top view and orthogonal cross-sectional views of a transversely-excited film bulk acoustic resonator (XBAR) 100 . XBAR resonators such as the resonator 100 may be used in a variety of RF filters including band-reject filters, band-pass filters, duplexers, and multiplexers. XBARs are particularly suited for use in filters for communications bands with frequencies above 3 GHz.
    [0021]The XBAR 100 is made up of a thin film conductor pattern formed on a surface of a piezoelectric plate 110 having parallel front and back surfaces 112 , 114 , respectively. The piezoelectric plate is a thin single-crystal layer of a piezoelectric material such as lithium niobate, lithium tantalate, lanthanum gallium silicate, gallium nitride, or aluminum nitride. The piezoelectric plate is cut such that the orientation of the X, Y, and Z crystalline axes with respect to the front and back surfaces is known and consistent. In the examples presented in this patent, the piezoelectric plates are Z-cut, which is to say the Z axis is normal to the front and back surfaces 112 , 114 . However, XBARs may be fabricated on piezoelectric plates with other crystallographic orientations.
    [0022]The back surface 114 of the piezoelectric plate 110 is attached to a surface of the substrate 120 except for a portion of the piezoelectric plate 110 that forms a diaphragm 115 spanning a cavity 140 formed in the substrate. The portion of the piezoelectric plate that spans the cavity is referred to herein as the “diaphragm” 115 due to its physical resemblance to the diaphragm of a microphone. As shown in FIG. 1 , the diaphragm 115 is contiguous with the rest of the piezoelectric plate 110 around all of a perimeter 145 of the cavity 140 . In this context, “contiguous” means “continuously connected without any intervening item”. In other configurations, the diaphragm 115 may be contiguous with the piezoelectric plate are at least 50% of the perimeter 145 of the cavity 140 .
    [0023]The substrate 120 provides mechanical support to the piezoelectric plate 110 . The substrate 120 may be, for example, silicon, sapphire, quartz, or some other material or combination of materials. The back surface 114 of the piezoelectric plate 110 may be bonded to the substrate 120 using a wafer bonding process. Alternatively, the piezoelectric plate 110 may be grown on the substrate 120 or attached to the substrate in some other manner. The piezoelectric plate 110 may be attached directly to the substrate or may be attached to the substrate 120 via one or more intermediate material layers (not shown in FIG. 1 ).
    [0024]“Cavity” has its conventional meaning of “an empty space within a solid body.” The cavity 140 may be a hole completely through the substrate 120 (as shown in Section A-A and Section B-B) or a recess in the substrate 120 under the diaphragm 115 . The cavity 140 may be formed, for example, by selective etching of the substrate 120 before or after the piezoelectric plate 110 and the substrate 120 are attached.
    [0025]The conductor pattern of the XBAR 100 includes an interdigital transducer (IDT) 130 . The IDT 130 includes a first plurality of parallel fingers, such as finger 136 , extending from a first busbar 132 and a second plurality of fingers extending from a second busbar 134 . The first and second pluralities of parallel fingers are interleaved. The interleaved fingers overlap for a distance AP, commonly referred to as the “aperture” of the IDT. The center-to-center distance L between the outermost fingers of the IDT 130 is the “length” of the IDT.
    [0026]The first and second busbars 132 , 134 serve as the terminals of the XBAR 100 . A radio frequency or microwave signal applied between the two busbars 132 , 134 of the IDT 130 excites a primary acoustic mode within the piezoelectric plate 110 . As will be discussed in further detail, the primary acoustic mode is a bulk shear mode where acoustic energy propagates along a direction substantially orthogonal to the surface of the piezoelectric plate 110 , which is also normal, or transverse, to the direction of the electric field created by the IDT fingers. Thus, the XBAR is considered a transversely-excited film bulk wave resonator.
    [0027]The IDT 130 is positioned on the piezoelectric plate 110 such that at least the fingers of the IDT 130 are disposed on the diaphragm 115 of the piezoelectric plate which spans, or is suspended over, the cavity 140 . As shown in FIG. 1 , the cavity 140 has a rectangular shape with an extent greater than the aperture AP and length L of the IDT 130 . A cavity of an XBAR may have a different shape, such as a regular or irregular polygon. The cavity of an XBAR may have more or fewer than four sides, which may be straight or curved.
    [0028]For ease of presentation in FIG. 1 , the geometric pitch and width of the IDT fingers is greatly exaggerated with respect to the length (dimension L) and aperture (dimension AP) of the XBAR. A typical XBAR has more than ten parallel fingers in the IDT 110 . An XBAR may have hundreds, possibly thousands, of parallel fingers in the IDT 110 . Similarly, the thickness of the fingers in the cross-sectional views is greatly exaggerated.
    [0029]FIG. 2 shows a detailed schematic cross-sectional view of the XBAR 100 . The piezoelectric plate 110 is a single-crystal layer of piezoelectrical material having a thickness ts. ts may be, for example, 100 nm to 1500 nm. When used in filters for LTE™ bands from 3.4 GHZ to 6 GHz (e.g. bands 42 , 43 , 46 ), the thickness ts may be, for example, 200 nm to 1000 nm.
    [0030]A front-side dielectric layer 214 may optionally be formed on the front side of the piezoelectric plate 110 . The “front side” of the XBAR is, by definition, the surface facing away from the substrate. The front-side dielectric layer 214 has a thickness tfd. The front-side dielectric layer 214 may be formed only between the IDT fingers (e.g. IDT finger 238 b ) or may be deposited as a blanket layer such that the dielectric layer is formed both between and over the IDT fingers (e.g. IDT finger 238 a ). The front-side dielectric layer 214 may be a non-piezoelectric dielectric material, such as silicon dioxide or silicon nitride. tfd may be, for example, 0 to 500 nm. tfd is typically less than the thickness ts of the piezoelectric plate. The front-side dielectric layer 214 may be formed of multiple layers of two or more materials.
    [0031]The IDT fingers 238 a and 238 b may be aluminum, an aluminum alloy, copper, a copper alloy, beryllium, gold, tungsten, molybdenum or some other conductive material. The IDT fingers are considered to be “substantially aluminum” if they are formed from aluminum or an alloy comprising at least 50% aluminum. The IDT fingers are considered to be “substantially copper” if they are formed from copper or an alloy comprising at least 50% copper. Thin (relative to the total thickness of the conductors) layers of other metals, such as chromium or titanium, may be formed under and/or over and/or as layers within the fingers to improve adhesion between the fingers and the piezoelectric plate 110 and/or to passivate or encapsulate the fingers and/or to improve power handling. The busbars ( 132 , 134 in FIG. 1 ) of the IDT may be made of the same or different materials as the fingers.
    [0032]Dimension p is the center-to-center spacing or “pitch” of the IDT fingers, which may be referred to as the pitch of the IDT and/or the pitch of the XBAR. Dimension w is the width or “mark” of the IDT fingers. The geometry of the IDT of an XBAR differs substantially from the IDTs used in surface acoustic wave (SAW) resonators. In a SAW resonator, the pitch of the IDT is one-half of the acoustic wavelength at the resonance frequency. Additionally, the mark-to-pitch ratio of a SAW resonator IDT is typically close to 0.5 (i.e. the mark or finger width is about one-fourth of the acoustic wavelength at resonance). In an XBAR, the pitch p of the IDT is typically 2 to 20 times the width w of the fingers. In addition, the pitch p of the IDT is typically 2 to 20 times the thickness is of the piezoelectric plate 110 . The width of the IDT fingers in an XBAR is not constrained to be near one-fourth of the acoustic wavelength at resonance. For example, the width of XBAR IDT fingers may be 500 nm or greater, such that the IDT can be readily fabricated using optical lithography. The thickness tm of the IDT fingers may be from 100 nm to about equal to the width w. The thickness of the busbars ( 132 , 134 in FIG. 1 ) of the IDT may be the same as, or greater than, the thickness tm of the IDT fingers.
    [0033]FIG. 3A and FIG. 3B show two alternative cross-sectional views along the section plane A-A defined in FIG. 1 . In FIG. 3A , a resonator 300 includes a piezoelectric plate 310 attached to a substrate 320 . A portion of the piezoelectric plate 310 forms a diaphragm 315 spanning a cavity 340 in the substrate. The cavity 340 does not fully penetrate the substrate 320 . Fingers of an IDT are disposed on the diaphragm 315 . The cavity 340 may be formed, for example, by etching the substrate 320 before attaching the piezoelectric plate 310 . Alternatively, the cavity 340 may be formed by etching the substrate 320 with a selective etchant that reaches the substrate through one or more openings (not shown) provided in the piezoelectric plate 310 . In this case, the diaphragm 315 may contiguous with the rest of the piezoelectric plate 310 around a large portion of a perimeter of the cavity 340 . For example, the diaphragm 315 may be contiguous with the rest of the piezoelectric plate 310 around at least 50% of the perimeter of the cavity 340 . An intermediate layer (not shown), such as a dielectric bonding layer, may be present between the piezoelectric plate 310 and the substrate 320 .
    [0034]In FIG. 3B , a resonator 300 ′ includes a piezoelectric plate 310 attached to a substrate 320 . The substrate 320 includes a base 322 and an intermediate layer 324 disposed between the piezoelectric plate 310 and the base 322 . For example, the base 322 may be silicon and the intermediate layer 324 may be silicon dioxide or silicon nitride or some other material. A portion of the piezoelectric plate 310 forms a diaphragm 315 spanning a cavity 340 in the intermediate layer 324 . Fingers of an IDT are disposed on the diaphragm 315 . The cavity 340 may be formed, for example, by etching the intermediate layer 324 before attaching the piezoelectric plate 310 . Alternatively, the cavity 340 may be formed by etching the intermediate layer 324 with a selective etchant that reaches the substrate through one or more openings provided in the piezoelectric plate 310 . In this case, the diaphragm 315 may be contiguous with the rest of the piezoelectric plate 310 around a large portion of a perimeter of the cavity 340 . For example, the diaphragm 315 may be contiguous with the rest of the piezoelectric plate 310 around at least 50% of the perimeter of the cavity 340 as shown in FIG. 3 B. Although not shown in FIG. 3B , a cavity formed in the intermediate layer 324 may extend into the base 322 .
    [0035]FIG. 4 is a graphical illustration of the primary acoustic mode of interest in an XBAR. FIG. 4 shows a small portion of an XBAR 400 including a piezoelectric plate 410 and three interleaved IDT fingers 430 which alternate in electrical polarity from finger to finger. An RF voltage is applied to the interleaved fingers 430 . This voltage creates a time-varying electric field between the fingers. The direction of the electric field is predominantly lateral, or parallel to the surface of the piezoelectric plate 410 , as indicated by the arrows labeled “electric field”. Due to the high dielectric constant of the piezoelectric plate, the RF electric energy is highly concentrated inside the plate relative to the air. The lateral electric field introduces shear deformation which couples strongly to a shear primary acoustic mode (at a resonance frequency defined by the acoustic cavity formed by the volume between the two surfaces of the piezoelectric plate) in the piezoelectric plate 410 . In this context, “shear deformation” is defined as deformation in which parallel planes in a material remain predominantly parallel and maintain constant separation while translating (within their respective planes) relative to each other. A “shear acoustic mode” is defined as an acoustic vibration mode in a medium that results in shear deformation of the medium. The shear deformations in the XBAR 400 are represented by the curves 460 , with the adjacent small arrows providing a schematic indication of the direction and relative magnitude of atomic motion at the resonance frequency. The degree of atomic motion, as well as the thickness of the piezoelectric plate 410 , have been greatly exaggerated for ease of visualization. While the atomic motions are predominantly lateral (i.e. horizontal as shown in FIG. 4 ), the direction of acoustic energy flow of the excited primary acoustic mode is substantially orthogonal to the surface of the piezoelectric plate, as indicated by the arrow 465 .
    [0036]Considering FIG. 4 , there is essentially no RF electric field immediately under the IDT fingers 430 , and thus acoustic modes are only minimally excited in the regions 470 under the fingers. There may be evanescent acoustic motions in these regions. Since acoustic vibrations are not excited under the IDT fingers 430 , the acoustic energy coupled to the IDT fingers 430 is low (for example compared to the fingers of an IDT in a SAW resonator) for the primary acoustic mode, which minimizes viscous losses in the IDT fingers.
    [0037]An acoustic resonator based on shear acoustic wave resonances can achieve better performance than current state-of-the art film-bulk-acoustic-resonators (FBAR) and solidly-mounted-resonator bulk-acoustic-wave (SMR BAW) devices where the electric field is applied in the thickness direction. In such devices, the acoustic mode is compressive with atomic motions and the direction of acoustic energy flow in the thickness direction. In addition, the piezoelectric coupling for shear wave XBAR resonances can be high (>20%) compared to other acoustic resonators. High piezoelectric coupling enables the design and implementation of microwave and millimeter-wave filters with appreciable bandwidth.
    [0038]FIG. 5 is a plan view of an XBAR 500 with periodic etched holes. The XBAR 500 includes a piezoelectric plate 510 having parallel front and back surfaces 512 , 514 , respectively. The piezoelectric plate is a thin single-crystal layer of a piezoelectric material such as lithium niobate, lithium tantalate, lanthanum gallium silicate, gallium nitride, or aluminum nitride. The piezoelectric plate is cut such that the orientation of the X, Y, and Z crystalline axes with respect to the front and back surfaces is known and consistent.
    [0039]The back surface 514 of the piezoelectric plate is attached to surface of a substrate 520 . A portion of the piezoelectric plate forms a diaphragm spanning a cavity 540 in the substrate 520 . As shown in FIG. 5 , the cavity 540 extends completely through the substrate 520 . The cavity may only extend part way through the substrate, as shown in FIG. 3A and FIG. 3B .
    [0040]An IDT 530 is formed on the surface of the piezoelectric plate 510 . The IDT 530 includes a first busbar 532 and a second busbar 534 . A first set of parallel fingers, such as finger 536 extends from the first busbar 532 . A second set of parallel fingers extends from the second busbar 534 . The first and second sets of fingers are parallel and interleaved. At least the interleaved fingers of the IDT are disposed on the diaphragm. A periodic array of holes 580 are formed in the diaphragm. As shown in FIG. 5 , the periodic array includes one hole at the end of each IDT finger. Specifically, a hole is disposed between the end of each of the first set of fingers and the second busbar and a hole is disposed between the end of each of the second set of fingers and the first busbar. Other periodic arrangements of the holes, such as at the ends of alternate IDT fingers may be used.
    [0041]The periodic array of holes 580 has two effects on the performance of the XBAR 500 . First, the holes scatter, and thus inhibit resonance of, spurious acoustic waves traveling parallel to the IDT fingers. Such spurious acoustic waves can introduce ripple in the input/output transfer function of XBAR filters. Second, the array of holes 580 appears to increase the Q-factor of XBAR devices, possibly by helping to confine the primary shear acoustic mode to the aperture of the XBAR.
    [0042]As shown in FIG. 5 , the holes 580 are right circular cylinders with a diameter approximately equal to the width of the IDT fingers. The size and shape of the holes in FIG. 5 is exemplary. The holes may be larger or smaller than the width of the IDT fingers and may have a cross-sectional shape other than circular. For example, the cross-sectional shape of the holes may be oval, square, rectangular, or some other shape. The holes need not necessarily pass through the piezoelectric plate. The holes may be blind holes that only extend part way though the thickness of the piezoelectric plate. The size and depth of the holes must be sufficient to create a domain with significantly reduced acoustic impedance. An additional benefit of holes at the ends of the IDT fingers is reduction of parasitic capacitance between the IDT finger tips and the adjacent busbar.
    [0043]FIG. 6 is a graph of the conductance versus frequency for XBARs with and without periodic etched holes. The conductance was determined by 3-dimensional simulation using a finite element technique. The solid line 610 is the conductance (on a logarithmic scale) of an XBAR with holes at the end of each IDT finger, as shown in FIG. 5 . The dashed line 620 is the conductance of a similar XBAR without holes. The improvement in the Q-factor is evident in the higher, sharper conductance peak to the resonance frequency of 4.64 GHz. Above the resonance frequency, local variations, or ripple, in conductance are reduced, but not eliminated, by the presence of the array of holes.
    [0044]FIG. 7 is a plan view of another XBAR 700 with periodic array of etched holes. The XBAR 700 includes a piezoelectric plate 710 , a substrate 720 (not visible beneath the piezoelectric plate), an IDT 730 , and a cavity 740 . Each of these elements is comparable to the corresponding element of the XBAR 500 of FIG. 5 , except that the upper and lower (as seen in the figure) edges of the cavity and the busbars of the IDT are not perpendicular to the IDT fingers. Specifically, the upper and lower edges of the cavity and the busbars are inclined by an angle θ with respect to a line perpendicular to the IDT fingers. The angle θ may be between 0 and 25 degrees for example.
    [0045]FIG. 8 is a graph of the conductance versus frequency for two XBARs with periodic etched holes. The conductance was determined by 3-dimensional simulation using a finite element technique. The solid line 810 is the conductance (on a logarithmic scale) of an XBAR with holes at the end of each IDT finger, as shown in FIG. 5 . The dashed line 820 is the conductance of an XBAR with the busbars and upper and lower edges of the cavity not perpendicular to the IDT fingers and holes at the end of each IDT finger, as shown in FIG. 7 . The Q-factors of the two XBARs at the resonance frequency are comparable Above the resonance frequency, local variations, or ripple, in conductance are further reduced in the device with the busbars and upper and lower edges of the cavity not perpendicular to the IDT fingers.
    [0046]Description of Methods
    [0047]FIG. 9 is a simplified flow chart showing a process 900 for making an XBAR or a filter incorporating XBARs. The process 900 starts at 905 with a substrate and a plate of piezoelectric material and ends at 995 with a completed XB AR or filter. The flow chart of FIG. 9 includes only major process steps. Various conventional process steps (e.g. surface preparation, cleaning, inspection, baking, annealing, monitoring, testing, etc.) may be performed before, between, after, and during the steps shown in FIG. 9 .
    [0048]The flow chart of FIG. 9 captures three variations of the process 900 for making an XBAR which differ in when and how cavities are formed in the substrate. The cavities may be formed at steps 910 A, 910 B, or 910 C. Only one of these steps is performed in each of the three variations of the process 900 .
    [0049]The piezoelectric plate may be, for example, Z-cut lithium niobate or lithium tantalate as used in the previously presented examples. The piezoelectric plate may be some other material and/or some other cut. The substrate may preferably be silicon. The substrate may be some other material that allows formation of deep cavities by etching or other processing.
    [0050]In one variation of the process 900 , one or more cavities are formed in the substrate at 910 A, before the piezoelectric plate is bonded to the substrate at 920 . A separate cavity may be formed for each resonator in a filter device. The one or more cavities may be formed using conventional photolithographic and etching techniques. Typically, the cavities formed at 910 A will not penetrate through the substrate, and the resulting resonator devices will have a cross-section as shown in FIG. 3A or FIG. 3B .
    [0051]At 920 , the piezoelectric plate is bonded to the substrate. The piezoelectric plate and the substrate may be bonded by a wafer bonding process. Typically, the mating surfaces of the substrate and the piezoelectric plate are highly polished. One or more layers of intermediate materials, such as an oxide or metal, may be formed or deposited on the mating surface of one or both of the piezoelectric plate and the substrate. One or both mating surfaces may be activated using, for example, a plasma process. The mating surfaces may then be pressed together with considerable force to establish molecular bonds between the piezoelectric plate and the substrate or intermediate material layers.
    [0052]A conductor pattern, including IDTs of each XBAR, is formed at 930 by depositing and patterning one or more conductor layer on the front side of the piezoelectric plate. The conductor layer may be, for example, aluminum, an aluminum alloy, copper, a copper alloy, or some other conductive metal. Optionally, one or more layers of other materials may be disposed below (i.e. between the conductor layer and the piezoelectric plate) and/or on top of the conductor layer. For example, a thin film of titanium, chrome, or other metal may be used to improve the adhesion between the conductor layer and the piezoelectric plate. A conduction enhancement layer of gold, aluminum, copper or other higher conductivity metal may be formed over portions of the conductor pattern (for example the IDT bus bars and interconnections between the IDTs).
    [0053]The conductor pattern may be formed at 930 by depositing the conductor layer and, optionally, one or more other metal layers in sequence over the surface of the piezoelectric plate. The excess metal may then be removed by etching through patterned photoresist. The conductor layer can be etched, for example, by plasma etching, reactive ion etching, wet chemical etching, and other etching techniques.
    [0054]Alternatively, the conductor pattern may be formed at 930 using a lift-off process. Photoresist may be deposited over the piezoelectric plate. and patterned to define the conductor pattern. The conductor layer and, optionally, one or more other layers may be deposited in sequence over the surface of the piezoelectric plate. The photoresist may then be removed, which removes the excess material, leaving the conductor pattern.
    [0055]At 940 , a front-side dielectric layer may be formed by depositing one or more layers of dielectric material on the front side of the piezoelectric plate. The one or more dielectric layers may be deposited using a conventional deposition technique such as sputtering, evaporation, or chemical vapor deposition. The one or more dielectric layers may be deposited over the entire surface of the piezoelectric plate, including on top of the conductor pattern. Alternatively, one or more lithography processes (using photomasks) may be used to limit the deposition of the dielectric layers to selected areas of the piezoelectric plate, such as only between the interleaved fingers of the IDTs. Masks may also be used to allow deposition of different thicknesses of dielectric materials on different portions of the piezoelectric plate.
    [0056]In a second variation of the process 900 , one or more cavities are formed in the back side of the substrate at 910 B. A separate cavity may be formed for each resonator in a filter device. The one or more cavities may be formed using an anisotropic or orientation-dependent dry or wet etch to open holes through the back-side of the substrate to the piezoelectric plate. In this case, the resulting resonator devices will have a cross-section as shown in FIG. 1 .
    [0057]At 950 , periodic holes, as shown in FIG. 5 and FIG. 7 , may be formed. The periodic holes may extend part way or completely through the piezoelectric plate and the front-side dielectric layer, if present. For example, the positions of the holes may be defined photolithographically and the holes may be formed using a suitable wet or dry etching process.
    [0058]In a third variation of the process 900 , one or more cavities in the form of recesses in the substrate may be formed at 910 C by etching the substrate using an etchant introduced through openings in the piezoelectric plate. The periodic holes formed at 950 may serve as the openings through which the etchant is introduced. A separate cavity may be formed for each resonator in a filter device. The one or more cavities formed at 910 C will not penetrate through the substrate, and the resulting resonator devices will have a cross-section as shown in FIG. 3A or FIG. 3B .
    [0059]In all variations of the process 900 , the filter device is completed at 960 . Actions that may occur at 960 include depositing an encapsulation/passivation layer such as SiO 2 or Si 3 O 4 over all or a portion of the device; forming bonding pads or solder bumps or other means for making connection between the device and external circuitry; excising individual devices from a wafer containing multiple devices; other packaging steps; and testing. Another action that may occur at 960 is to tune the resonant frequencies of the resonators within the device by adding or removing metal or dielectric material from the front side of the device. After the filter device is completed, the process ends at 995 .
    [0060]Closing Comments
    [0061]Throughout this description, the embodiments and examples shown should be considered as exemplars, rather than limitations on the apparatus and procedures disclosed or claimed. Although many of the examples presented herein involve specific combinations of method acts or system elements, it should be understood that those acts and those elements may be combined in other ways to accomplish the same objectives. With regard to flowcharts, additional and fewer steps may be taken, and the steps as shown may be combined or further refined to achieve the methods described herein. Acts, elements and features discussed only in connection with one embodiment are not intended to be excluded from a similar role in other embodiments.
    [0062]As used herein, “plurality” means two or more. As used herein, a “set” of items may include one or more of such items. As used herein, whether in the written description or the claims, the terms “comprising”, “including”, “carrying”, “having”, “containing”, “involving”, and the like are to be understood to be open-ended, i.e., to mean including but not limited to. Only the transitional phrases “consisting of” and “consisting essentially of”, respectively, are closed or semi-closed transitional phrases with respect to claims. Use of ordinal terms such as “first”, “second”, “third”, etc., in the claims to modify a claim element does not by itself connote any priority, precedence, or order of one claim element over another or the temporal order in which acts of a method are performed, but are used merely as labels to distinguish one claim element having a certain name from another element having a same name (but for use of the ordinal term) to distinguish the claim elements. As used herein, “and/or” means that the listed items are alternatives, but the alternatives also include any combination of the listed items.
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