NOVELTY - Manufacturing stacked oxide material involves forming oxide component (520) over base component (521a); forming first oxide crystal component (522) which grows from upper surface toward inside of the oxide component by heat treatment, and leaving amorphous component just above surface of base component; and stacking second oxide crystal component over first oxide crystal component.
USE - For manufacturing stacked oxide material (claimed), used for manufacturing semiconductor device e.g. transistor, diode, power device; semiconductor integrated circuit including memory, converter, image sensor, liquid crystal display panel or light-emitting display device including organic light-emitting element.
ADVANTAGE - The method provides a productive manufacturing process through which a semiconductor device including semiconductor elements such as transistor can be obtained at low cost; provides semiconductor device with low power consumption; and provides a transistor having high transistor performance and high reliability.
DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following:
(1) stacked oxide material comprising first oxide crystal component whose crystal growth proceeded from surface toward an inside of first oxide crystal component, over base component, and second oxide crystal component over first oxide crystal component;
(2) manufacturing semiconductor device involving forming gate electrode layer including flat surface over surface of base, forming gate insulating layer over gate electrode layer, forming first oxide semiconductor layer over gate insulating layer, causing crystal growth which proceeds from an upper surface toward an inside of first oxide semiconductor layer by first heat treatment to form first non-single crystalline layer, forming second oxide semiconductor layer over the first non-single crystalline layer, causing crystal growth which proceeds from first non-single crystalline layer toward upper surface of second oxide semiconductor layer over first non-single crystalline layer by second heat treatment to form second non-single crystalline layer, and forming a source electrode layer and drain electrode layer over stack of first non-single crystalline layer and second non-single crystalline layer, where bottom interface whose crystal is aligned of first non-single crystalline layer is provided to be spaced from surface of gate insulating layer; and
(3) semiconductor device comprising gate electrode layer including flat surface over surface of base, gate insulating layer over gate electrode layer, metal oxide layer including amorphous region over gate insulating layer, first non-single crystalline layer which is c-axis-aligned perpendicularly to surface, over the metal oxide layer including amorphous region, second non-single crystalline layer which is on and in contact with first non-single crystalline layer and c-axis-aligned perpendicularly to the surface; and source electrode and drain electrode over stack of first non-single crystalline layer and the second non-single crystalline layer, where the first non-single crystalline layer and second non-single crystalline layer are metal oxide layers.
DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional view of stacked oxide material.
Oxide component (520)
Base component (521a)
Amorphous state (521b)
Oxide crystal component (522)
