The experimental results of studying the temperature and frequency dependences of dc and ac conductivity as well as the dispersion of dielectric coefficients of the grown single crystals of the (TlInSe2)0.1(TlGaTe2)0.9 solid solution are presented. The nature of dielectric losses and the hopping charge transfer mechanism have been established, and parameters of localized states, such as the density of states near the Fermi level and their spread, the average time and the hopping length of charge carriers, and the concentration of deep traps responsible for dc and ac conductivity, have been evaluated.

In a temperature range of 80–400 K, electrical and magnetic properties of layered compounds TlCrS2 and TlCrSe2 are investigated. It is shown that these compounds are p-type semiconductors and possess ferromagnetic ordering with T C ∼90 and 105 K, respectively.

TlMnS 2 and TlMnSe 2 crystals have been synthesized by the method of solid-state reaction from chemical elements weighted in the stoichiometric ratio. X-ray, magnetic, and electric studies have been performed. It is established that the TlMnS 2 compound crystallizes in the tetragonal structure with the unit-cell parameters a = 7.74 Å, c = 30.60 Å, Z = 20, and ρ x = 6.40 g/cm 3 ; TlMnSe 2 crystallizes in the hexagonal structure with the unit-cell parameters a = 6.53 Å, c = 23.96 Å, Z = 8, and ρ x = 6.71 g/cm 3 . TlMnS 2 and TlMnSe 2 are semiconductors and exhibit an antiferromagnetic character of exchange interaction.

CuFeTe2 single crystals were grown and the temperature dependence of their magnetic susceptibility in the temperature range 1.8–400 K was investigated. It is found that the magnetic susceptibility shows anomalies at temperatures T s = 65 and T N = 125 K. At T > 125 K, the crystal is in the paramagnetic state controlled by Fe2+ and Cu2+ ions with an effective magnetic moment of 1.44 μB.