While two-photon Hong-Ou-Mandel interference visibility has become a standard metric for single-photon sources, many optical quantum technologies require the generation and manipulation of larger photonic states. To date, efficiency limitations have prevented scaling quantum dot-based interference to the coalescence of more than two photons at a single beamsplitter. We overcome this limitation by combining a state-of-the-art quantum dot source with deterministic demultiplexing, enabling the direct observation of quantum interference fringes arising from up to four photons. We measure high mean interference contrasts of 93.0 ± 0.1 % for two photons, and 84.1 ± 1.0 % for four photons, with the complex fringe structure fully reproduced by a theoretical model. These results reveal the existence of "deep fringes" whose minima are unaffected by distinguishable photons, rendering the maximum contrast of four-photon interference highly sensitive to multi-photon emission but robust against photon distinguishability. We predict that these phenomena will extend to interference of larger numbers of photons, with relevance across a range of potential optical quantum technologies. A Fisher information analysis demonstrates that interference fringes from our source can exhibit phase sensitivity beyond the standard quantum limit, illustrating potential applications in quantum metrology.

Quantum dots have set benchmarks that far surpass other quantum emitters owing to their ability to deliver high-quality, high-rate and pure photons. However, achieving these exceptional capabilities at telecom wavelengths, bridging the gap to fibre-optic infrastructure and scalable silicon photonics, remains a challenge. Overcoming this difficulty demands high-quality quantum materials and devices that, despite extensive efforts, have not yet been realized. Here we demonstrate waveguide-integrated InAs quantum dots and realize a fully quantum-coherent photon-emitter interface operating in the original telecommunication band (or O-band, 1,260-1,360 nm). We record transform-limited linewidths only 8% broader than the inverse lifetime and bright 41.7-MHz emission rate under 80-MHz π-pulse excitation. These findings showcase the potential of quantum dots for scalable quantum networks.

Decay of a four-level diamond scheme via a cascade is a potential source of entangled photon pairs. A solid-state implementation is the biexciton cascade in a semiconductor quantum dot. While high entanglement fidelities have been demonstrated, the two photons, XX and X, are temporally correlated, typically resulting in poor photon coherence. Here, we demonstrate a high two-photon interference visibility (a measure of the photon coherence) for both XX (90±2%) and X (80±6%) photons. This is achieved by Purcell enhancing the biexciton transition in a low-noise device. We find that the interference visibility follows the well-known quantum optics result upon tuning the XX:X lifetime ratio over 2 orders of magnitude. In addition, we show that the XX purity, 98%, is limited not by quantum optics but by the phonons in the semiconductor matrix via cavity feeding.

Resonant laser excitation of a two-level system with subsequent single-photon emission can be used to generate single photons with high indistinguishability or Hong-Ou-Mandel (HOM) visibility. However, spectral overlap between excitation laser and emitted photons generally poses significant challenges. Furthermore, emitter re-excitation intrinsically limits achievable single-photon purity. Established solutions mitigate these issues at significant cost to source efficiency and with increased source complexity. This motivates the use of few-level systems with spectral separation of excitation and emission pathways. One option is a three-level cascade. However, without targeted lifetime engineering of emitting states, the cascade naturally limits achievable photon indistinguishability. Here we study a semiconductor quantum dot with resonant and selective cavity-enhancement of biexciton-to-exciton transition. Following resonant two-photon excitation of the biexciton state, we collect the emitted single photon with the cavity. This approach circumvents emitter re-excitation and naturally introduces spectral separation of excitation laser and emitted single photon. Supported by first experimental results, we demonstrate theoretically that with selective Purcell enhancement, the observed quality quantifiers of single-photon emission (purity, equivalently g^(2)(0), and HOM visibility 𝒱, equivalently indistinguishability) are competitive with respect to high-quality deterministic quantum-dot single-photon sources. This is already achieved without systematic optimization or targeted system engineering, which firmly places the reported approach as a viable route to the next generation of highest-quality quantum-dot based deterministic single-photon sources.

Entangled photon pairs are a ubiquitous resource in quantum technologies, used in quantum key distribution and quantum networking as well as fundamental tests of non-locality. For scalable quantum networks, pairs that are indistinguishable in all unentangled degrees of freedom are essential, as they enable high-fidelity entanglement swapping across network nodes. To date the most-studied sources of "swappable" entangled photon pairs have been based on spontaneous parametric down-conversion (SPDC) in non-linear crystals. However, the probabilistic nature and unavoidable trade-off between brightness and unwanted multi-photon emission limits their performance in lossy channels. Here, we demonstrate a high-fidelity source of "swappable" entangled photon pairs using a semiconductor quantum dot (QD) coupled to a tunable microcavity. By actively modulating the QD emission between orthogonal polarisation states, delaying one path in a low-loss Herriott cell, and recombining the two on a balanced beam splitter, we generate entangled photon pairs with a fidelity of 96.1±0.5

Quantum networking technologies use spin qubits and their interface to single photons as core components of a network node. This necessitates the ability to co-design the magnetic- and optical-dipole response of a quantum system. These properties are notoriously difficult to design in many solid-state systems, where spin-orbit coupling and the crystalline environment for each qubit create inhomogeneity of electronic g-factors and optically active states. Here, we show that GaAs quantum dots (QDs) obtained via the quasi-strain-free local droplet etching epitaxy growth method provide spin and optical properties predictable from assuming the highest possible QD symmetry. Our measurements of electron and hole g-tensors and of transition dipole moment orientations for charged excitons agree with our predictions from a multiband k.p simulation constrained only by a single atomic-force-microscopy reconstruction of QD morphology. This agreement is verified across multiple wavelength-specific growth runs at different facilities within the range of 730 nm to 790 nm for the exciton emission. Remarkably, our measurements and simulations track the in-plane electron g-factors through a zero-crossing from -0.1 to 0.3 and linear optical dipole moment orientations fully determined by an external magnetic field. The robustness of our results demonstrates the capability to design - prior to growth - the properties of a spin qubit and its tunable optical interface best adapted to a target magnetic and photonic environment with direct application for high-quality spin-photon entanglement.

Many of the most promising quantum information platforms store quantum information in electronic or atomic spins. To incorporate these devices into quantum networks, a spin-photon interface is required. Currently, the best on-demand single-photon sources use a semiconductor quantum dot in an engineered photonic environment. However, it is difficult to achieve coherent spin control in a high-performance single-photon source, and spin coherence is limited by magnetic noise from nuclear spins in the semiconductor host material. Here we combine all-optical spin control with a quantum dot in an open microcavity. We demonstrate fast coherent rotations of a hole spin around an arbitrary axis of the Bloch sphere with a maximum pi-pulse fidelity of 98.6%. To suppress the slow magnetic noise, we laser cool the nuclear spins using the hole as a central spin. This extends the hole spin free-induction-decay time by more than an order of magnitude. It becomes much larger than both rotation time and radiative recombination time of the spin, enabling the creation of many spin-photon pairs before the loss of spin coherence.

This paper describes how resonance spectra and mode profiles can be used to characterize and quantify the mode-shaping effects in open-access plano-concave optical microcavities. The presented semi-analytic theory is based on the application of perturbation theory to the round-trip evolution of the optical field. It includes various mirror-shape and nonparaxial effects and extends the nonparaxial theory presented in [Exter et al., Phys. Rev. A 106, 013501 (2022)] and verified in [Koks et al., Phys. Rev. A 105, 063502 (2022)] to the common case of an anisotropic Gaussian mirror. The presented measurements and analyses of resonance spectra and mode profiles demonstrate how the different mode-shaping effects can be individually distinguished and quantified. Spin-orbit coupling, which is one of the nonparaxial effects, is prominently visible in the intriguing polarization patterns of the resonant modes, while polarization tomography yields the shape-induced birefringence and associated polarization splitting of the fundamental modes.

We achieve 99.2% extinction in cavity transmission using a quantum dot, enabling optical nonlinearities at the two-photon limit. We observe a g 2 (0) = 587 for transmitted photons, the strongest reported to date.

Building a practical quantum processor involves integrating millions of physical qubits along with the necessary components for individual qubit manipulation and readout. Arrays of gated silicon spins offer a promising route toward achieving this goal. Optimized radio frequency resonators with high internal quality factor are based on superconducting inductors and enable fast spin readout. All-electrical spin control and gate-dispersive readout remove the need for additional device components and simplify scaling. However, superconducting high-Q tank circuits are susceptible to crosstalk-induced ringup from electrical qubit control pulses, which causes fluctuations of the quantum dot potential and is suspected to degrade qubit performance. Here, we report on the coherent and all-electrical control of a hole spin qubit at 1.5K, integrated into a silicon fin field-effect transistor and connected to a niobium nitride nanowire inductor gate-sensor. Our experiments show that qubit control pulses with their broad range of higher harmonics ring up the tank when the control pulse spectrum overlaps with the tank resonance. This can cause a reduction of the readout visibility if the tank ringing amplitude exceeds the excited state splitting of the quantum dot, lifting Pauli spin blockade and thus leading to state preparation and measurement errors. We demonstrate how to circumvent these effects by engineering control pulses around the tank resonances. Importantly, we find that the ringup does not limit the spin coherence time, indicating that efficient high-Q resonators in gate-sensing are compatible with all-electrical spin control.

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically strong spin-orbit interaction. Depending on how the electric field acts on the quantum dot, the spin can be driven either by a modulation of its g-factor or by a displacement of the wavefunction. Here, we demonstrate in-situ control over the dominant EDSR driving mechanism of a hole-spin qubit in a silicon fin field-effect transistor by applying microwave signals to two different gate electrodes, thereby tuning the orientation of the local electric field. We measure the effective g-factor, its electrical tunability, and the Rabi frequency as functions of magnetic-field orientation. Their distinct angular dependencies, analyzed using a g-matrix formalism, allow us to identify the underlying driving processes and track their relative contributions for different drive configurations. By selecting the drive electrode, we can switch from a regime dominated by g-factor modulation to one with a strong contribution from wavefunction displacement. This in-situ tunability provides direct experimental access to both spin-driving mechanisms and offers a route toward optimized spin-qubit performance.

A promising route towards the heralded creation and annihilation of single-phonons is to couple a single-photon emitter to a mechanical resonator. The challenge lies in reaching the resolved-sideband regime with a large coupling rate and a high mechanical quality factor. We achieve all of this by coupling self-assembled InAs quantum dots to a small-mode-volume phononic-crystal resonator with mechanical frequency $\Omega_\mathrm{m}/2\pi = 1.466~\mathrm{GHz}$ and quality factor $Q_\mathrm{m} = 2.1\times10^3$. Thanks to the high coupling rate of $g_\mathrm{ep}/2\pi = 2.9~\mathrm{MHz}$, and by exploiting a matching condition between the effective Rabi and mechanical frequencies, we are able to observe the interaction between the two systems. Our results represent a major step towards quantum control of the mechanical resonator via a single-photon emitter.

We present in situ tuning of both the absolute and relative frequency spacing of the modes in an optical microcavity by incorporating a wedged diamond membrane. We demonstrate THz continuous tuning of doubly-resonant Raman scattering.

Optically active solid-state spin qubits thrive as an appealing technology for quantum interconnect and quantum networking, owing to their atomic size, scalable creation, long-lived coherence, and ability to coherently interface with flying qubits. Trivalent erbium dopants in particular emerge as a compelling candidate with their telecom C band emission and shielded 4f intra-shell spin-optical transitions. However, prevailing top-down architecture for rare-earth qubits and devices has not allowed simultaneous long optical and spin coherence necessary for long-distance quantum networks. Here we demonstrate dual erbium telecom spin-photon interfaces in an epitaxial thin-film platform via wafer-scale bottom-up synthesis. Harnessing precise controls over the matrix purity, dopant placement, and symmetry unique to this platform, we simultaneously achieve millisecond erbium spin coherence time and <3 kilohertz optical dephasing rate in an inversion-symmetry protected site and realize both optical and microwave control in a fiber-integrated package for rapid scaling up. These results demonstrate a significant prospect for high-quality rare-earth qubits and quantum memories assembled using a bottom-up method and pave the way for the large-scale development of quantum light-matter interfaces for telecommunication quantum networks.

Quantum devices based on optically addressable spin qubits in diamond are promising platforms for quantum technologies such as quantum sensing and communication. Nano- and microstructuring of the diamond crystal is essential to enhance device performance, yet fabrication remains challenging and often involves trade-offs in surface quality, aspect ratio, device size, and uniformity. We tackle this hurdle with an approach producing millimeter-scale, thin (down to 70 nm), and highly parallel (< 0.35 nm/μm) membranes from single-crystal diamond. The membranes remain contamination free and possess atomically smooth surfaces (Rq <  200 pm) as required by state-of-the-art quantum applications. We demonstrate the benefits and versatility of our method by fabricating large fields of free-standing and homogeneous photonic nano- and microstructures. Leveraging a refined photolithography-based strategy, our method offers enhanced scalability and produces robust structures suitable for direct use, while remaining compatible with heterogeneous integration through pick-and-place transfer techniques.

Scaling-up photonic quantum technologies will require the parallel operation of on-demand sources of identical single photons. In this context, broadband photonic structures embedding a single quantum dot (QD) are particularly appealing, as optimal source performance can be maintained upon QD spectral tuning. The nanopost-a nanocavity built with a segment of photonic wire-offers a broadband Purcell effect and a directive output beam. So far, however, QD-nanopost devices were only characterized using nonresonant optical excitation. Here, we employ a continuous wave laser to resonantly drive a single QD in a nanopost and detect its resonance fluorescence. Even though the nanopost introduces a significant optical roughness at the scale of the focused laser spot, a cross-polarization scheme leads to an excellent rejection of the excitation laser. We extensively characterize the QD optical emission by combining linescans and intensity correlation measurements, which are jointly analyzed with an analytical model. The emission features a pronounced antibunching (g (2)(0) = 0.02), close to the one of an ideal two-level system. For small driving powers, the homogeneous (total) spectral linewidth is a factor of 1.4 (5) above the Fourier limit. Combined with future device improvements, these results mark an important step toward the realization of bright and widely tunable sources of indistinguishable single photons.

Building a practical quantum processor involves integrating millions of physical qubits along with the necessary components for individual qubit manipulation and readout. Arrays of gated silicon spins offer a promising route toward achieving this goal. Optimized radio frequency resonators with high internal quality factor are based on superconducting inductors and enable fast spin readout. All-electrical spin control and gate-dispersive readout remove the need for additional device components and simplify scaling. However, superconducting high-Q tank circuits are susceptible to crosstalk induced ringup from electrical qubit control pulses, which causes fluctuations of the quantum dot potential and is suspected to degrade qubit performance. Here, we report on the coherent and all-electrical control of a hole spin qubit at 1.5K, integrated into a silicon fin field-effect transistor and connected to a niobium nitride nanowire inductor gate-sensor. Our experiments show that qubit control pulses with their broad range of higher harmonics ring up the tank when the control pulse spectrum overlaps with the tank resonance. This can cause a reduction of the readout visibility if the tank ringing amplitude exceeds the excited state splitting of the quantum dot, lifting Pauli spin blockade and thus leading to state preparation and measurement errors. We demonstrate how to circumvent these effects by engineering control pulses around the tank resonances. Importantly, we find that the ringup does not limit the spin coherence time, indicating that efficient high-Q resonators in gate-sensing are compatible with all-electrical spin control.

Efficiently coupling a narrow-linewidth nitrogen-vacancy center (NV) in diamond to an open optical microcavity, we observe for the first time NV resonance fluorescence without requiring any time-filtering, marking a breakthrough toward high-efficiency spin-photon entanglement sources.

Mobile electrons in the semiconductor monolayer MoS2 form a ferromagnetic state at low temperature. The Fermi sea consists of two circles: one at the K point, the other at the K˜ point, both with the same spin. Here, we present an optical experiment on gated MoS2 at low electron density in which excitons are injected with known spin and valley quantum numbers. The resulting trions are identified using a model which accounts for the injection process, the formation of antisymmetrized trion states, electron-hole scattering from one valley to the other, and recombination. The results are consistent with a complete spin polarization. From the splittings between different trion states, we measure the exchange energy Σ, the energy required to flip a single spin within the ferromagnetic state, as well as the intervalley Coulomb exchange energy J. We determine Σ=11.2 meV and J=5 meV at n=1.5×1012 cm−2 and find that J depends strongly on the electron density n. Published by the American Physical Society 2024

Semiconductor spin qubits offer the potential to employ industrial transistor technology to produce large-scale quantum computers. Silicon hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. However, the demonstration of a two-qubit interaction has remained an open challenge. One missing factor is an understanding of the exchange coupling in the presence of a strong spin-orbit interaction. Here we study two hole-spin qubits in a silicon fin field-effect transistor, the workhorse device of today's semiconductor industry. We demonstrate electrical tunability of the exchange splitting from above 500 MHz to close-to-off and perform a conditional spin-flip in 24 ns. The exchange is anisotropic because of the spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 180 degrees. The exchange Hamiltonian no longer has the Heisenberg form and can be engineered such that it enables two-qubit controlled rotation gates without a trade-off between speed and fidelity. This ideal behaviour applies over a wide range of magnetic field orientations, rendering the concept robust with respect to variations from qubit to qubit, indicating that it is a suitable approach for realizing a large-scale quantum computer.