The Zinc sulfide(ZnS) thin films are prepared on glass substrate by RF magnetron sputtering technique at different substrate temperatures and Ar gas flows.Characterization of the film properties is carried out using surface probe surface profilometer,ultra-vision/vision(UV/Vis) spectrophotometer and X-ray diffraction(XRD).The results indicate that X-ray diffraction analysis confirms the formation of ZnS sphalerite phase and has strong(111) preferred orientation and great lattice stress at all substrate temperatures.The deposited rates are reduced with the increasing of the substrate temperature.The best thin film is deposited as the substrate temperature is 300℃.The Ar gas flow has great positive correlation influence on deposited rates,but little influence on the optical and microstructure properties.

CdTe solar cells are not only CdS/CdTe p-n junction cells, but also a kind of multilayer thin films solar cells on Transparent-Conducting-Oxide (TCO) substrates. Many techniques can be employed to deposit CdTe films, such as close-spaced deposition (CSS), metal organic chemical vapor deposition (MOCVD) and pulsed laser deposition (PLD). Among them, PLD is a promising and widely-used technique for multilayer thin films deposition. In general, the substrate temperature (Ts) is relatively low during PLD-CdTe thin films deposition processing in vacuum, less than 300°C, which is not that high enough to fabricate high efficiency cells. It is firstly found by us that CdTe film can be deposited on higher temperature Fluorine-Tin-Oxide (FTO) substrates (≧400°C) under a particular atmosphere by PLD. In this paper, the deposition of CdTe thin films at varying Ts in vacuum condition has been studied thoroughly and strong Ts dependence of the films properties has been revealed. Thus, based on this thorough study, by using the relatively high pressure and high Ts PLD technique, we fabricated an ultra-thin FTO/PLD-CdS(100nm)/PLD-CdTe(~1.5μm)/HgTe:Cu/Ag solar cell with an efficiency of 6.68% in the atmosphere of Ar+O2 (15Torr) and at the relatively high Ts (500°C).