•Linear impurity distribution near the p-n junction.•Low unit area capacity (Co/A)77 K = 4.3 × 10−8 F × cm−2).•D4.7μm,300K∗ as high as 6.5 × 108 Jones.

Research data for photovoltaic, I–V, and C–V characteristics of InAsSbP/InAs heterostructure photodiodes that operate at room temperature in the wavelength range 2.6–2.8 μm have been reported. Based on these data and available publications, conclusions have been drawn about the prospects for using these photodiodes in a number of applications.

The spatial distribution of equilibrium and nonequilibrium (including luminescent) IR (infrared) radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures (λmax = 3.4 μm) is measured and analyzed; the structural features of the photodiodes, including the reflective properties of the ohmic contacts, are taken into account. Optical area enhancement due to multiple internal reflection in photodiodes with different geometric characteristics is estimated.

Проведены измерения и анализ пространственного распределения равновесного и неравновесного (в том числе люминесцентного) излучения в средневолновых ИК флип-чип фотодиодах на основе двойных гетероструктур InAsSbP/InAs (lambdamax=3.4 мкм) с учетом конструктивных особенностей фотодиодов, включая отражательные свойства омических контактов. Сделана оценка увеличения оптической площади сбора фотонов за счет лучей, испытывающих многократные отражения внутри полупроводниковых чипов с различающимися геометрическими характеристиками. DOI: 10.21883/FTP.2017.02.44117.8380

P-InAsSbP/n-InAs/n+-InAs single heterostructure photodiode monolithic array with linear impurity distribution in the space charge region and “bulk” n-InAs absorbing layer has been fabricated by the LPE method and studied for the first time. Unlike all known InAsSbP/InAs PDs with an abrupt p-n junction the linear impurity distribution PDs potentially suggest lower compared with analogs capacitance and tunneling current. Indeed the developed photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8×10−6A/cm2, Ubias=−0.5V, 164K) and background limited infrared photodetector (BLIP) regime starting from 190K (2π field of view, D3.1μm∗=1.1×1012cmHz1/2/W) have been demonstrated. High photodiode performance is thought to be due to above peculiarities of the impurity distribution as well as low defect density in P-InAsSbP/n-InAs/n+-InAs single heterostructure.

The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p -InAsSbP/ n -InAsSb/ n + -InAs with the n + -InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.

P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low dark current (8·10−6 A/cm2, Vbias = −0.5 V, 164 K) and background limited infrared photodetector (BLIP) regime starting from 150 K (2π field of view, D 3.1 μ m ∗ = 1.4·1012 cm Hz1/2/W) have been demonstrated.

Double heterostructure back-side illuminated photodiodes with a 10-μm thick InAs0.9Sb0.1 active layer have been fabricated, studied and characterized in the 77–353K temperature range. Spectral response peculiarities and temperature induced peak shift (λ=4–4.8μm) were explained within simple phenomenological model based on proximity of the active layer thickness and hole diffusion length while reasons for a sensitivity decrease at low temperatures are still less evident. Transition from a generation-recombination to a diffusion current flow mechanisms with temperature increase appeared to be close to that for the InAs based diodes.

© P.N. Brunkov , N.D. Il’inskaya , S.A. Karandashev , N.M. Latnikova , A.A. Lavrov + B.A. Matveev , A.S. Petrov , M.A. Remennyi , E.N. Sevostyanov , N.M. Stus + + Ioffe Institute, 194021 St. Petersburg, Russia • National Research University of Information Technologies, Mechanics and Optics (ITMO), 197101 St. Petersburg, Russia ∗ LETI Ul’yanov (Lenin) St. Petersburg Electrotechnical University, 197376 St. Petersburg, Russia 6= Electron National Research Institute, 194223 St. Petersburg, Russia

Double heterostructure (DH) photodiodes (PDs) with InAs active layer and back-side illumination have been studied in the 100-300 K temperature range. Temperature dependence of a spectral response was standard for InAs based PDs while saturation current (or zero bias resistance) was characterized by a single value of the activation energy with domination of a diffusion current at most temperatures. As a result the simulated detectivity value was beyond the known numbers for homo- and heterojunction InAs PDs. (C) 2014 Elsevier B.V. All rights reserved.

The I–V characteristics of front-surface-illuminated InAsSb(P) photodiodes are simulated in terms of a simple model that takes into account the radial variation of the lateral resistance of a semiconductor layer on the irradiated side. The applicability of the model for predicting the form of the photocurrent density distribution and its influence on the sensitivity of the photodiodes is demonstrated.

InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 μm spectral region in a wide temperature range 77–300 K. Estimations of detectivity as well as p-n junction position in InAs heterostructures have been obtained via photoelectrical and AFM measurements.

Analysis of current-voltage and spectral characteristics of photodiodes based on a single p-InAsSbP/n-InAs heterostructure formed on a heavily doped n +-InAs substrate (n + ∼ 1018 cm−3) is presented. It is shown that, at low temperatures (77 < T < 190 K), the generation-recombination current flow mechanism typical of p-i-n diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.

This article describes how the far-field radiation distribution and power varies with the geometrical parameters of immersion lenses made from silicon (n¯=3.4) and chalcogenide glass (n¯=2.4) mated with LEDs (λ=3.4µm) based on indium antimonide (n¯=3.5) and estimates the efficiency of using such devices in miniature optical systems.

We have experimentally studied the parameters of room-temperature photodiodes based on gradient solid solutions of the InAsSb(P) system, having a long-wavelength cut-off at λ = 5.8 μm and various geometries of non-transparent contacts on the exposed p -InAsSb(P) surface. It is established that the sensitivity (photocurrent collection efficiency) strongly depends on the perimeter of this contact: photodiodes with net structure of this contact (increased perimeter and area) are characterized by increased sensitivity even despite greater degree of shadowing of the exposed surface by the contact.

The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this non-uniformity is one of the main causes of the poor sensitivity of photodiodes which have low dynamic resistance at zero bias and which operate in the photocurrent mode.

The current-voltage characteristics and temperature dependences of zero-bias dynamic resistance are analyzed for InAsSb photodiodes, with consideration for current crowding near the anode, using experimental data on the intensity distribution of positive and negative luminescence over the surface of the diodes. The effect of temperature on the efficiency of photogenerated carrier collection in the diodes and also the effect of the anode configuration on the current sensitivity and detectivity of the diodes are discussed.