The process of forming edge metallization on input windows (germanium, silicon, and other discs) used for introducing the received light flux into a photodetector housed in a protective hermetic casing is being investigated. This work presents the results of an experimental study on the dependence of the edge metallization profile of Ge discs, formed by magnetron sputtering, on the design parameters of the loading device. Various designs of loading devices are presented. The experimental results demonstrate the influence of thickness on the edge metallization profiles of the components of the loading device that mask the discs during sputtering.

A mathematical model of the band gap of the mercury cadmium telluride ternary solid solutions grown by molecular beam and liquid phase epitaxy has been developed using the data of analysis of a statistical sample of the results of monitoring the spectral characteristics of the sensitivity of photodiodes manufactured at JSC Research and Production Association Orion. The temperature dependence of the long-wavelength sensitivity limit of the photodiodes based on the mercury cadmium telluride structures grown by molecular beam and liquid phase epitaxy has been studied using the derived formulas for the effective band gap. The results are intended to improve the technology of mercury cadmium telluride photodiodes.

For the task of Earth remote sensing (ERS) in the short-wave infrared (IR) range of the spectrum, the most promising are matrix and multi-row photodetector modules of the short-wave infrared (IR) range of the spectrum based on heteroepitaxial structures of materials of the ternary solution of cadmium-mercury-tellurium (HgCdTe) and the ternary solution of indium-gallium-arsenide (InGaAs), sensitive in the spectral range from 1 to 2.5 μm. Possible architectures of photosensitive elements that provide reduced dark currents and noise are analyzed. Ways of improvement are considered and dark currents and parameters of n-on-p-type heterostructures based on HgCdTe in a wide temperature range, as well as the parameters of p+-B–n-N+-type barrier structures based on InGaAs are investigated.

Methods for increasing mechanical strength and reproducibility in the design of dual-spectral thinned matrix photodetectors made of InSb by sputtering multilayer interference coatings based on layers of silicon and silicon dioxide are considered. The results of modeling the distribution of mechanical stresses and suppression of errors in the optical thickness of antireflection coatings with different numbers of layers are presented. Experimental samples of dual-spectral matrix photodetectors were obtained, confirming the simulation results.

Multilayer structures based on the antimonide group materials with absorber layers InSb or AlxIn1-XSb, and XBn-structures with AlxIn1-XSb barrier layer (InSb/AlxIn1-XSb/InSb), designed for the manufacture of advanced photosensitive devices detecting radiation in the medium-wave infrared (IR) range (MWIR), have been developed and investigated. Various topology photosensitive elements (PSE) with absorbing layers InSb or AlxIn1-XSb were fabricated on the basis of MBE-grown p–i–n and barrier structures. It is shown that wideband ternary al-loys AlxIn1-XSb are considered as an alternative to the narrowband binary compound InSb, since, due to wide-band material properties, photodiodes based on AlxIn1-XSb have lower dark currents, and, consequently, noise. The average values of detectivity D* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so D* was more than 1011 cmW-1Hz1/2 in p–i–n-structures, and D* exceed of 1012 cmW-1Hz1/2 in barrier structures.

The effect of the properties and materials of a passivation coating and the low-energy argon ion flux on the I‒V characteristics of the XBn-InGaAs focal plane arrays has been studied. Passivation coatings have been obtained by magnetron and resistive sputtering of dielectric materials (zinc sulfide ZnS, silicon monoxide SiO, and yttrium fluoride YF3). It is shown that the exposure to low-energy argon ions leads to a catastrophic increase in the dark currents in non-passivated array elements.

We report on the investigations of focal plane arrays for mid-wave infrared radiation detection based on antimonide multilayers with InSb, Al x In 1 – x Sb, and InAs 1 – x Sb x absorption layers, including structures with InAlSb (InSb/InAlSb/InSb) and InAsSb (InAsSb/AlAsSb/InAsSb) barrier layers for optoelectronic systems and equipment. Photosensitive elements of different topologies have been fabricated. It has been demonstrated that wideband Al x In 1-x Sb and InAs 1 – x Sb x ternary alloys are an alternative to the narrowband InSb binary compound, since the photodiodes based on them exhibit lower dark currents and, consequently, low noise. The average values of detectivity D * and noise equivalent temperature difference for the photodetectors based on photosensitive element arrays of different topologies have been measured.

In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of advanced materials; designing the structure of a photosensitive element (PSE) to achieve the minimum dark current, which in turn leads to a change in generations of matrix photodetector modules (PDMs). Several different types of PDMs based on InSb epitaxial structures for the range of 3–5 μm, based on GaAs/AlGaAs QWIP-structures for the range 7.8–9.0 μm, and based on InGaAs XBn-structures for the range 0.9–1.7 μm were developed and investigated. The foreign analogs are shown, and the advantages given by the new capabilities offered by new detector technologies are considered.

In this paper, we report on the design, the fabrication, and performance of SWIR photomodules using sensitive two-dimensional arrays based on InGaAs-heterostructures. The de- sign of suggested InGaAs-heterostructure includes InAlAs wideband barrier layer and high sensitive absorber InGaAs layer which are increasing the uniformity and operability of focal plane array (FPA), so the number of defect elements are less than 0.5 %. The possibilities of spectral range expanding into short-wavelength to 0.5 μm and into long-wavelength to 2.2 μm regions have been considered. The operation principals of active-pulse system for 0.9–1.7 μm spectral range based on InGaAs 320256 FPA with 30 μm pitch have been presented. The investigations showed that the infrared gated-viewing system based on the InGaAs 320256 FPA provided a spatial resolution of 0,6 m.

Consideration is given to the distribution of sensitivity along the area of indium antimonide FPA pixel obtained with the aid of the nondestructive method of the scanning mask on the basis of the fast testing open probe installation.

Aspects of epitaxially grown indium antimonide (InSb) on InSb substrates (InSb-on-InSb) by molecular beam epitaxy (MBE) for the 2D focal plane arrays fabrication process have been described. The epitaxial growth offers possibility for complex structure production, and then such structures suppose more effective control of the thermal generation charge carriers as the detector temperature is raised above 80 K. Investigations of mid-wave infrared (MWIR) 320256 FPAs with 30 μm pitch and 640512 FPAs with 15 μm pitch based on InSb-on-InSb layers have shown high performance: the average detectivity at T = 77 K more than 21011 cmW-1Hz1/2, the average value of noise equivalent temperature difference (NETD) with a cold aperture of 60o at T = 77K was in the range of 10–20 mK. High quality thermal imaging images were obtained in real time mode.

Представлены результаты исследований матричных фотоприемных устройств (ФПУ) на основе тройных соединений InGaAs коротковолнового ИК диапазона спектра формата 320х256 элементов с шагом 30 мкм и 640х512 элементов с шагом 15 мкм, работающих в пассивном и активно-импульсном режимах реального времени [1]. Важной функциональной возможностью ФПУ формата 320х256 является функционирование в четырех режимах реального времени: пассивном 2D; активном 2D с заданной глубиной по дальности; активно-импульсном 3D (дальномерном); асинхронном бинарном для обнаружения внешних лазерных излучателей [2].

Consideration is given to the results of the development of an optoelectronic module based on a Russian cooled matrix photodetector of 640512 elements format, operating in the spectral range of 3.6–4.9 microns, based on InSb. The paper describes the basic algorithms used for video image processing, describes the main blocks of the developed device, describes the methods for measuring NETD and spatial resolution, and gives the characteristics of the device.

In this study we investigated the dependences of the rate of ion-beam etching of the upper contact layer (GaAs:Si), an active region consisting of a 50-fold alternation of barrier layers (AlxGa1–xAs) and quantum wells (GaAs:Si) and the lower contact layer (GaAs:Si) along the depth of QWIP structures based on GaAs–AlGaAs, fabricated by molecular beam epitaxy (MBE), in order to determine the effect of the composition of various layers on the etching rate and the ability to complete the etching process to the desired depth in time.

Повышение требований к тактико-техническим характеристикам оптико-электронных систем ИКдиапазона, наблюдаемое в последнее десятилетие, является катализатором для непрерывного совершенствования и оптимизации технологии изготовления современных фотоприемных устройств. Особые требования предъявляются в первую очередь к полупроводниковым материалам и соединениям на их основе, используемым для изготовления фоточувствительных элементов. Фотомодули на основе гетероэпитаксиальных структур тройных соединений кадмий-ртуть-теллур (КРТ) стабильно занимают широкую область рынка изделий фотоэлектроники [1, 2]. Вместе с тем, перед разработчиками стоит вопрос совершенствования технологии изготовления таких фотомодулей.

В последнее десятилетие в отечественной фотосенсорике наметился ряд новых направлений, связанных с расширением области применения матричных фотоприемных устройств (МФПУ) коротковолнового инфракрасного диапазона спектра Short Wave Infrared (SWIR), прежде всего на основе тройных соединений InGaAs [1, 2] и HgCdTe [3]. Это связано с некоторыми особенностями работы МФПУ SWIR-диапазона. Поскольку в коротковолновой области используется излучение, отражённое от объектов, в сформированном с помощью МФПУ изображении коротковолнового ИК-диапазона присутствуют тени и контраст, что делает изображение, близким к видимому, что наиболее удобно для восприятия человеком. Данные МФПУ также незаменимы в оптико-электронных системах переднего обзора ГСН сверхскоростных объектов, в то время как тепловые ФПУ испытывают значительные искажения в связи с перегревом обтекателя. Техническим решением задачи стробирования по дальности с построением 3D-изображений является использование активно-импульсных систем в коротковолновой инфракрасной области спектра. При этом для подсветки в исследуемой области спектра можно применять импульсное лазерное излучение с длинами волн 1,06; 1,31; 1,55 мкм, соответствующее области спектральной чувствительности материала InGaAs и окну прозрачности атмосферы. Существенным преимуществом МФПУ на основе InGaAs является возможность работы без охлаждения или при охлаждении фоточувствительной матрицы термоэлектрическими устройствами. В АО «НПО «Орион» созданы полноформатные МФПУ 640х512 элементов на основе барьерных структур со сверхнизкими темновыми токами (менее 10 фА) и чувствительным поглощающим слоем In0,53Ga0,47As на высоколегированных подложках InP. Значения обнаружительной способности МФПУ при рабочих напряжениях смещения 0,2 – 0,4 В превышают D* ≥ 1013 смВт-1Гц1/2; вольтовая чувствительность превышает Su ≥ 1011 В/Вт; пороговая мощность порядка ~ 2·10-15 Вт/эл.; квантовая эффективность до ~ 70 %.

In this paper, we analyze the design features of avalanche photodiode architectures with separated absorption (InGaAs) and multiplication (InAlAs) regions. Two architectures are considered: p+–M–с–i–n+- and p+–i–с–M–n+-types implemented in InGaAs/InAlAs/InP heteroepitaxial structures (HES). Three main layers, absorbing (i), charge (c), and multiplying (M), were mandatory for each architecture. Matrices of photosensitive elements were formed using data from InGaAs/InAlAs/InP HES grown via MOS hydride epitaxy (MOSHE) method. Photocurrent multiplication factors, which varied from 1 to 18–25 in the range of reverse bias voltages of U = 8–14 V, were calculated based on the studied current–voltage characteristics of avalanche elements in the matrices.

I – V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds (MOC-hydride epitaxy) of epitaxial structures with the In 0.67 Ga 0.33 As absorbing layer doped with Zn on the InP substrates are studied. The photodiodes are fabricated using the mesatechnology. The long-wavelength boundary of the spectral photosensitivity of diodes measured at half-maximum is 2.06 μm at room temperature. Photosensitivity spectra are studied in a temperature interval of 230–300 K.

UV visible-blind and solar-blind 320 × 256 photodiode arrays based on Al x Ga 1 – x N heteroepitaxial structures (AlGaN HES) and sensitive in the near-ultraviolet range of 0.2–0.4 μm have been created and studied. The AlGaN HES were grown by organometallic vapor deposition (MOCVD) and molecular beam epitaxy (MBE) on sapphire substrates. To reduce structural defects, the state of the surface and the surface layer of epipolished sapphire substrates was investigated, and a finishing technology was developed. UV FPAs in the AlGaN HES were produced by ion etching. The dark current components for AlGaN photodiodes were simulated. The main dark current components, such as generation–recombination, shunting leakage, hopping conductivity, and Poole–Frenkel components, are calculated. The possibility of achieving photoelectric parameters on the level of the best foreign counterparts is demonstrated .

A Russian-made focal plane array (FPA) for gated imager working in the short-wave IR range is presented. The FPA contains an array of p–i–n photodiodes based on a 320 × 256 InGaAs/InP heterostructure with a pitch of 30 µm, readout integrated circuit, thermoelectric cooler, and a sealed housing with a sapphire window. A distinctive feature of the FPA is related to functioning in four modes: passive, gated 3D, gated 2D, and asynchronous binary. Flexible combinations of such modes can be used to obtain maximum data on an object under observation. Range data that are formed in each pixel of the FPA and the signal intensities make it possible to synthesize 3D images of objects. The main parameters of the FPA and IR images obtained in different modes are demonstrated. Calculated ranging results are presented versus power and divergence of laser radiation. The main sources of errors in calculations of range resolution are considered.