The effect of short-pulsed irradiation with 220 keV carbon ions for fluences of 2.2 x 10(13) - 2.1 x 10(15) cm(-2 )on the optical and electrical properties of titanium nitride films deposited by reactive magnetron sputtering on silicon and steel substrates has been studied. Relationships are obtained between the irradiation conditions and the parameters of interband absorption. A relationship has been established between the concentration of defects before and after irradiation, the degree of overlap of their levels and changes in the optical and electrical properties of the films. Reasons of high radiation resistance of the films are discussed. The optical and electrical properties of the films change during irradiation in two stages. The first stage is related to the annihilation of defects, the second stage is associated with their accumulation. Irradiation of films significantly slows down the rate of oxidation of their surface layers and stabilizes the electrical properties.

In this paper, we study the optical properties of aluminum- and silicon-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on glass, silicon, and steel substrates. The absorption and luminescence characteristics are determined by the composition of the coatings and microstructure and depend on the physical properties of the substrate. The absorption and luminescence centers are associated with intrinsic defects in the nitrides and their simplest complexes. The relationships between the accumulation of growth defects, their interaction, the type of distribution of localized states, the band gap, and the stability of the optical properties are established. At an increase in the silicon content in the coatings, the degree of static induced disorder increases, and the contribution of the continuous distribution of the defect levels and interband absorption increases. Silicon-containing defects stabilize the optical properties of the coatings.

The effect of irradiation by carbon ions in the mode of short-pulsed ion implantation on the optical and electrical characteristics of graphite-like pyrolytic boron nitride was studied. The characteristics of the states of growth defects localized in the band gap change more significantly with an increase in the energy density of the ion beam, which is accompanied by the ordering of the electronic structure of the compound due to radiation - thermal annealing. Absorption spectra indicate the predominant effect of static disorder due to defects. Irradiation forms a defective semiconductor material with a maximum band gap of 3.3-3.45 eV, a current value of 2.65-2.83 eV for direct transitions and 1.1-1.8 eV for indirect transitions, and an absorption edge due to exponentially distributed states of 1.3-2.6 eV and 2.6-3.3 eV defects of different nature. Anion vacancies, their clusters and impurity-vacancy complexes make the main contribution to the material properties. Irradiation forms low - conducting dielectric layers with surface conductivity of mixed n- and p-type on the surface of a pyrolytic boron nitride. The conduction mechanism is determined by the activation exchange of charge carriers between the allowed bands and donor and acceptor levels due to radiation and growth defects. After irradiation, the Fermi level remains localized near the position characteristic of the pyrolytic boron nitride near the middle of the band gap.

The energetic characteristics of growth and radiation defects (RDs) in boron carbide films deposited by reactive magnetron sputtering on a steel substrate and irradiated with powerful electron and pulsed ion beams were investigated. The relationship between the characteristics of point RDs, the degree of distortion of the electronic structure and the characteristics of interband and exponential absorption was established. The absorption spectra of the films were due to electronic transitions between the defects energy states localized in the band gap and interband transitions. The stability of characteristics to electron irradiation was due to the high concentration of growth defects, distributed along the boundaries between the structural fragments. Short-pulse implantation of carbon ions stimulates partial annealing of intrinsic RDs and their redistribution and formation of thermally stable complexes from defects. Boron carbide films significantly exceed the radiation resistance of sodium calcium silicate glass, but are slightly inferior to the films of aluminum and silicon nitrides, obtained by magnetron deposition.

The characteristics of interband and exponential optical absorption of leucosapphire and polycrystalline corundum (polycor) after irradiation with chromium ions and subsequent annealing in vacuum at 300–1800 K and in air at 300–800 K are studied. Contributions of defects with different thermal and chemical stability into optical parameters were established. The effect of intrinsic radiation defects, of substitutional defects and of complexes on base of oxygen and defects on formation the focal point in absorption spectra owing to fulfilment of the Urbach rule was determined. Heating in air of strongly defective material synthesized in surface layers of alumina by the ion–heat modification influences the characteristics of defects and the electronic structure of band gap negligibly.

The paper is focused on the study of the structural, electrical and optical characteristics of the ceramic silicon carbide before and after irradiation in the regimes of the high-power ion beams (HPIB) and high-intensity short-pulse implantation (HISPI) of carbon ions. The dominant mechanism of transport of charge carriers, their type and the energy spectrum of localized states (LS) of defects determining the properties of SiC were established. Electrical and optical characteristics of ceramic before and after irradiation are determined by the biographical and radiation defects whose band gap (BG) energy levels have a continuous energetic distribution. A dominant p-type activation component of conduction with participation of shallow acceptor levels 0.05-0.16 eV is complemented by hopping mechanism of conduction involving the defects LS with a density of 1.2T017-2.4T018 eV-Am-3 distributed near the Fermi level.The effect of radiation defects with deep levels in the BG on properties change dominates after HISPI. A new material with the changed electronic structure and properties is formed in the near surface layer of SiC after the impact of the HPIB.

In this paper the optical absorption characteristics of Al–Si–N coatings, deposited by magnetron sputtering on the substrates from silicon single crystals and glass were studied. The influence of conditions deposition on optical properties has been determined. The characteristics of interband and exponential absorption are determined by influence of localized states (LS) of defects continuously distributed in the band gap (BG) and reflect the influence on properties of crystalline and amorphous components material of coatings. The interband absorption is realized via the allowed indirect transitions through the optical gap 2.7–2.8 eV and direct transitions through the gap 3.8–3.96 eV. The interrelations between the parameters of interband and exponential absorption are typical for the naterials, whose properties are determined by a static and/or dynamic disordering of the crystal lattice by the defects of a different nature. Maximal average value of the BG width is 4.8–5.1 eV in the scope of semiclassical analysis applied to amorphous and strongly defective materials. The optical parameters of deposited coatings are changed in correlation with a changing of the mechanical characteristics in dependency on the nitrogen pressure.

The optical and electrophysical properties of polycrystalline diamond films (PDF) deposited from the abnormal glow discharge have been studied. The dominating mechanisms of absorption and charge carrier transfer and the energy spectrum of the localized states (LS) of defects which determine the properties of the films have been specified. The parameters of the interband absorption and electrical conductivity are determined by the continuous energy distribution in the band gap (BG) of the states of defects of different nature. The absorption edge of the crystalline phase of the films is separated from the absorption zone determined by the electron transitions between LS defects. The width of BG is narrowed to 0.2-0.5 eV from the quantity typical to the diamond. An additional film absorption edge is formed in the energy interval 1.2-3.3 eV, where Urbach rule is fulfilled and the interband absorption is realized at direct transitions through the optical gap 1.1-1.5 eV. The average width of BG is 2.6-3.24 eV estimated within semiclassical interband model. The interaction of the parameters of the interband and exponential absorption is determined by the crystal lattice static disorder. The dominating n-type of the activation component of the electrical conductivity is complemented by the hopping mechanism with the participation of the localized states of the defects distributed near the Fermi level with a density 5.6T017-2.1·1021 eV-1-cm-3.

The paper is focused on the study of the boron doping effect on the electrical characteristics, on the mechanism of charge carrier transfer, and on the energy spectrum of the localized defect states in the polycrystalline diamond films (PDF) deposited from an abnormal glow discharge. PDF doping enables to form the semiconductor layers of p-type conductivity, which have as good properties as those of PDF produced by the alternative methods. The doping reduces the degree of disorder in the film material brought by the growth defects, which determine the film electrical characteristics and electrotransfer mechanism. The PDF electrical characteristics and electrotransfer mechanism are determined by the defects of different nature, whose band gap energy levels have a continuous energy distribution. A p-type activation component is realized in the exchange of charge carriers between the valence band and shallow acceptor levels with the activation energy of 0.013-0.022 eV. Doping increases the effect of the hopping mechanism of the conductivity involving the localized states with a density of (1-6)·1020 eV-1 •cm-3 distributed near the Fermi level, which is in the low half of the band gap.

The article focuses on the investigation of the properties of alumina-zirconia ceramics possessing high mechanical characteristics and good conductivity at high temperatures. Measurement results of the dielectric dissipation factor, dielectric constant, electric conductivity when using direct and alternating current for the ceramics samples of 80%(ZrO 2 -3%Y 2 O 3 )-20% Al 2 O 3 composition are presented in the paper. Measurements were conducted simultaneously in the electrostatic field in vacuum while heating the samples to the temperatures ranging from 300 to 1700K. Investigations showed that alumina-zirconia ceramics at high temperatures obtains ferroelectric properties not typical of these structures.

Electrical and photoelectric properties of polycrystalline silicon after high-intensity short-pulse implantation of carbon ions have been studied. It has been found that vacuum annealing (10 –2 Pa, 300–1200 K) of silicon affects the surface dark and photoconductivity. Optimal conditions of thermal vacuum treatment of silicon have been found that provide the most heat and field resistant changes in its properties. Probable causes for the changes in electric and photoelectric characteristics of the material have been revealed.

Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10−2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.

The electric and photoelectric properties of gallium-arsenide films deposited on a polycrystalline corundum substrate from the ablation plasma formed by a high-power ion beam are investigated. It is ascertained that vacuum and air annealing (in the former case, P = 10−2 Pa and T = 300–1200 K) and sulfide chemical passivation in an alcoholic solution affect the characteristics of the dark conductivity and photo-conductivity of the film surfaces. The optimal conditions for thermal and chemical treatment, at which the most stable changes in film the properties are attained, are determined. Enhancement in the stability of the electrical and photoelectric characteristics of films, which is achieved after thermal treatment, arises from the annealing of defects and their clusterization. Sulfide passivation leads to changes in the characteristics and increases the stability of properties under air oxidation.

Optical reflectance and absorbance of gallium arsenide films formed on polycrystalline corundum, quartz glass, and copper foil are investigated in the energy interval of 1.1–6.2 eV. The films have been deposited from ablation plasma induced by a high-power ion beam. The exponential and interband absorbance spectra of the material of films are determined by defects in the GaAs crystalline lattice and the intricate composition of the material with predominance of nanocrystalline inclusions in the amorphous phase. Films deposited on polycor at the plasma flame center with the use of a low-resistance target have optimal properties for application in devices of optoelectronics and solar power engineering. Thermal vacuum treatment at 300–850 K modifies the optical properties of films owing to annealing of defects and changing of the structural-phase composition of a material.

Photoelectrical parameters of single sapphire crystals and polycrystalline corundum are studied after irradiation with cobalt ions and subsequent annealing in vacuum. Structure of states localized in forbidden band and induced by various imperfections has a higher stability to annealing as compared to case of implantation of other types of ions into aluminum oxide. Intrinsic radiationinduced defects and cobalt nanoparticles influence the photoelectrical parameters. The contribution of substitution defects to change of photoconduction is negligible as compared with that of intrinsic defects. Effect of thermal annealing on photoelectrical parameters depends on processes of redistribution of induced defects and cobalt ions, defects recharge and it agglomeration into clusters. A cobalt nanoparticles effect on photoconduction energetic and kinetic parameters appear at most degree after annealing of samples at 300–1400 K. Partial restoration of electronic structure of alumina is observed in photoconduction change after annealing at 1200–1600 K.

The optical absorption of leucosapphire and polycrystalline corundum (polycor) upon coimplantation of iron and chromium ions and subsequent annealing in vacuum is studied. The structure of the states localized in the band gap induced by radiation defects exhibits a higher stability to annealing as compared to implantation of other types of ions into aluminum oxide and to separate irradiation with iron and chromium ions. The governing contribution to the exponential and interband absorption is made by substitutional defects of either type, their clusters, and impurity-vacancy complexes. The effect of incorporated iron ions on the population of levels of chromium-containing defect clusters, on their recharge, and on interaction with intrinsic radiation and biographical defects is revealed. Mixed clusters of substitutional defects are optically active in a spectral range of 2.0–4.0 eV after annealing at a temperature of 1300–1600 K.