Памяти Иосифа Леонидовича Розенталя, Вавилов Ю.Н., Гальпер А.М., Дрёмин И.М., Зацепин Г.Т., Кириллов-Угрюмов В.Г., Котов Ю.Д., Максименко В.М., Окунь Л.Б., Прилуцкий О.Ф., Родин В.Г., Чернавский Д.С., Фейнберг Е.Л.

In studies of the effect of carbon on the formation of thermal donors during one- and two-step annealings in oxygenated silicon crystals in the temperature interval 400-800 degrees C, it is shown that the presence of a carbon impurity in large concentrations, comparable with the oxygen impurity content in them (similar to 8 x 10(17) cm(-3)), results mainly in the formation of singly charged shallow thermal donors with thermal ionization energies in the range 24-38 meV and g factors in the interval 1.9985-1.9993, of which a significant fraction is thermally stable against annealings at higher temperatures. Subcritical oxygen clusters generated at carbon atoms appear in the role of the latter. Neither ordinary doubly charged thermal donors nor thermal accepters such as Si-NK centers are formed in such crystals. (C) 1996 American Institute of Physics.

It has been established by the Hall effect and ESR that acceptor centres in silicon crystals with high oxygen and low carbon concentrations at annealing temperatures from 550 to 800-degrees-C are formed. The rate of generation of acceptor centres increases with the annealing temperature and their concentration grows with the time of heat treatment reaching the maximum at the definite annealing time. The maximum of the acceptor concentration correlates with the oxygen content in the samples. An increase of the carbon content leads to a decrease of the generation rate of acceptor centres and at the carbon concentration of 7.8.10(17) cm-3 the formation of acceptors is completely suppressed.

The Hall effect and ESR methods were used in an investigation of the characteristics of the formation and properties of donor centers (thermal donors) generated by prolonged (up to 500 h) annealing at 450-550-degrees-C of n-type Si:P crystals with different carbon impurity concentrations, grown by the Czochralski method. Prolonged annealing destroyed a family of doubly charged thermal donors with levels at E1 = 60-70 meV and E2 = 120-150 meV, and this was accompanied by the formation of two sets of shallow singly charged donors of different nature with levels of depths in the interval E(i) = 24-38 meV. A hypothesis about the nature of these centers was ut forward.

The intensity of the spin-absorption lines of the Mn(Ga)0 center (Mn2+ + h) in the H-1 --> and E-1 --> components of the microwave field has been studied as a function of the direction of the external magnetic field H-0 --> in Mn-doped p-GaAs crystals. This behavior was studied both experimentally and theoretically. The spin-resonance spectra are governed by electric dipole transitions, not magnetic dipole transitions.

physica status solidi (a)Volume 93, Issue 2 p. K157-K159 Short Note On Localization of Phosphorus in Neutron-Doped Silicon N. I. Akulovich, N. I. Akulovich Belorussian Polytechnical Institute, Minsk Search for more papers by this authorV. M. Maksimenko, V. M. Maksimenko Belorussian Polytechnical Institute, Minsk Search for more papers by this authorV. I. Utenko, V. I. Utenko Belorussian Polytechnical Institute, Minsk Search for more papers by this author N. I. Akulovich, N. I. Akulovich Belorussian Polytechnical Institute, Minsk Search for more papers by this authorV. M. Maksimenko, V. M. Maksimenko Belorussian Polytechnical Institute, Minsk Search for more papers by this authorV. I. Utenko, V. I. Utenko Belorussian Polytechnical Institute, Minsk Search for more papers by this author First published: 16 February 1986 https://doi.org/10.1002/pssa.2210930251 Prospekt Lenina 65, 220 108 Minsk, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 L. J. Van Ruyven and C. A. Ammerlaan, Appl. Phys. Letters 34, 632 (1979). 2 N. I. Akulovich, V. V. Petrov, and V. I. Utenko, Phys. stat. sol. (a) 71, K63 (1982). 3 Yu. M. Babitskii, P. M. Grinshtein, M. G. Gornov, and R. I. Gutchel, Fiz. Tekh. Poluprov. 16, 530 (1982). Volume93, Issue216 February 1986Pages K157-K159 ReferencesRelatedInformation

The spin lattice relaxation rates of Cr°and Mn°in Si depend exponentially on temperature. To explain this the theory of Jahn-Teller interaction of the ground triplet state both with tetragonal and trigonal distortions was developed. Energy levels of both ions are tunnelly splitted.