The photosensitive germanium layers on a silicon substrate have been formed by molecular beam epitaxy. The structural, optical, and photovoltaic characteristics of the films have been investigated. The data obtained confirm the possibility of using the developed Ge on Si heterostructures for fabrication of photodetectors in the spectral range of 1.3–1.55 μ m

Si single crystal was sequentially implanted with high doses (2∙1016 cm-2) of In+ and Sb+ ions with an energy of 30 keV in order to synthesize a layer of narrow-gap indium antimonide (InSb) in its near-surface region. Implanted Si:(In + Sb) layers in the liquid phase were annealed with a powerful pulsed ( 100 ns) ion beam (C+/H+) with an energy of 300 keV and a pulse-energy density of 1.0 J/cm2. Calculation of the total depth profile of the concentration of implanted In and Sb atoms taking into account ion sputtering showed their maximum concentration of 40 at.

A brief overview is presented of results obtained at the Rzhanov Institute of Semiconductor Physics in the development of photon detectors and emitters promising for use in quantum cryptography systems, along with miniature quantum frequency standards based on the effect of coherent population trapping.

Методом молекулярно-лучевой эпитаксии сформированы фоточувствительные слои германия на кремниевой подложке. Исследованы структурные, оптические и фотоэлектрические характеристики плёнок. Полученные данные подтверждают возможность использования изготовленных гетероструктур Ge на Si для создания фотодетекторов спектрального диапазона 1,3-1,55 мкм. Photosensitive germanium layers on a silicon substrate have been formed by molecular beam epitaxy. The structural, optical and photovoltaic characteristics of the films have been investigated. The data obtained confirm the possibility of utilizing the developed Ge-on-Si heterostructures for the fabrication of photodetectors in the spectral range of 1.3-1.55 μm.

The influence of the design of high-speed photodiodes for microwave photonics and signal transmission systems on the diode dark current is studied experimentally. It is shown that Schottky barrier photodiodes demonstrate the lowest dark currents, excelling photodiodes of the pin design. Photodiodes of 25 micron mesa diameter with the dark current average value as low as 0.4 mA have been manufactured. It is shown the dark current value is controlled by the mesa side wall leakage.

A comprehensive study of the annealing effect (300-400 degrees C) on the electrical properties, morphology and chemical composition of the Au/Pt/Ti/n-InAlAs interface (Schottky contact) is carried out. It is shown that the Schottky contact pre-annealing during the formation or primary short (-1 min) annealing significantly increases the barrier height to the standard 0.68-0.7 eV with an ideality factor close to 1.1 due to the formation of a homogeneous amorphous TiAs layer with a small metallic (elemental) indium content. A further annealing at temperatures 300-350 degrees C for up to 20 min does not lead to significant changes in the morphology and electrical parameters of the Schottky contact. The annealing at the temperature of 400 degrees C (-10 min) leads to an increase in the barrier height and the ideality factor to the values of 0.73 and 1.3, respectively. In this case, the formation of an about 20 nm thick TiAs layer and indium clusters shaped as a pyramids at the Ti/InAlAs interface is also observed. Analysis of the temperature dependences of Schottky barrier parameters within the Tung model showed that only structural changes at the interface after the 400 degrees C annealing lead to a significant increase in the Ti/InAlAs Schottky contact homogeneity, reducing the density of local regions with a lowered barrier height.

The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μ m mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

The design and fabrication of a single photon detector based on InP/InGaAs/InP single-photon avalanche diodes (SPADs) operating in Geiger mode at a telecommunication wave-length of 1550 nm are discussed. The SPAD design, the method for obtaining InP/InGaAs/ InP heterostructures by molecular beam epitaxy, fabrication of SPAD chips using planar technology, and specific features of selective zinc doping of p-regions in the InP layer of the developed electronic circuits for measuring main SPAD parameters are described. Preliminary results of measurements of the parameters of the fabricated SPADs are presented.

The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.

Задачи передачи аналоговых СВЧ-сигналов по волоконным линиям требуют использования высокоскоростных фотоприемников с эквивалентной чувствительностью 5–10 А/Вт и выше и низким напряжением питания. В работе рассматриваются конструкция и характеристики фотоприемного модуля для оптоволоконных систем передачи данных и СВЧ-сигналов, выполненного на основе скоростного pin-фотодиода и трансимпедансного усилителя для диапазонов частот до 2,5–10 ГГц.

Разработан и изготовлен детектор одиночных фотонов на базе лавинных фотодиодов (ОЛФД) InP / InGaAs / InP, работающих на длине волны 1550 нм. Приведено описание конструкции, способа получения гетероструктуры и изготовления чипа ОЛФД. Представлены предварительные результаты измерений параметров изготовленных ОЛФД.

Однофотонные лавинные фотодиоды (ОЛФД) на основе гетероструктуры InP/InGaAs/InP обеспечивают поглощение на длине волны 1.55 мкм и применяются в волоконно-оптических линиях связи для реализации систем однофотонной квантовой криптографии. Для создания ОЛФД нами были проведены следующие работы: разработка конструкции и проектирование топологии ОЛФД на основе гетероструктуры InP/InGaAs/InP, технологического маршрута его изготовления методами планарной технологии, способа и условий проведения локальной диффузии цинка с целью получения заданного профиля распределения примеси p-типа и толщины области лавинного умножения, методов контроля параметров отдельных слоев гетероструктуры и ОЛФД в целом.

Для практической реализации квантовых коммуникаций требуются высокоэффективные детекторы одиночных фотонов. Оптимальным выбором являются полупроводниковые лавинные фотодиоды (ЛФД), работающие в гейгеровском режиме. В докладе обсуждается необходимость создания российских ЛФД для квантовых систем связи.

Описаны конструкция и технологии изготовления мощных СВЧ-мезафотодиодов с барьером Шоттки диаметром от 10 до 40 μm и обратной засветкой через подложку на основе гетероструктур InAlAs/InGaAs/InP, выращиваемых методом молекулярно-лучевой эпитаксии. Рабочая частота фотодиодов диаметром 10 μm составляет 40 GHz, а максимальная выходная СВЧ-мощность на частоте 20 GHz для фотодиодов диаметром 15 μm достигает 58 mW. Коэффициент амплитудно-фазового преобразования составил 1.5 rad/W, что превосходит литературные данные и делает данную конструкцию фотодиодов перспективной для применения в системах генерации и передачи аналоговых СВЧ-сигналов с высокими требованиями к фазовым шумам. Ключевые слова: мощные СВЧ-фотодиоды, гетероструктуры InAlAs/InGaAs, барьер Шоттки, планарная технология.

The influence of the conditions of gettering in high-resistivity silicon during fabrication of PIN photodiodes on reverse dark currents has been studied. It is shown that gettering using a combination of phosphorus ion implantation and deposition of a polysilicon film with subsequent doping of the substrate rear side with phosphorus at temperatures below 900°C leads to low values of the reverse dark current and increases the nonequilibrium carrier lifetime.

The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900 0C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.

AbstractGrowth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10^7 cm^–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

The design and technology of manufacturing of high-power Schottky barrier UHF-photodiodes with microstrip contacts made on the basis of InAlAs/InGaAs heterostructures have been developed. The operation frequency of 15-micron diameter photodiodes is greater than 25 GHz, while the maximum attainable output UHF power exceeds 50 mW at a frequency of 20 GHz. This allows one to utilize these photodiodes in analog fiber-optic UHF signal transmission lines as well as for generation and processing of UHF signals by optical techniques in radar systems and UHF measurement and instrumentation.

Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.