The recent results of the investigations performed in the research units of the Department of Micro- and Nanoelectronics of Belarusian State University of Informatics and Radioelectronics in the field of the development of perspective optical and electronic intra-chip and inter-chip interconnections of silicon integrated circuits are summarized. Examples of the use of nanostructured materials for the proposed light sources and detectors (Si) as well as light guides (Al2O3/TiO2) integrated with monocrystalline silicon are presented. The strategy of an application of inter-chip interposers for optical and electronic connections in bulk (2.5D and 3D) packages of integrated circuits was promoted and tested. Novel materials and structures promising for light sources, optically transparent electrical conductors and protectors against microwave electromagnetic radiation are demonstrated.

The paper analyzes the parameters of silicon avalanche LEDs and their use for electron-optical signal transmission systems. The advantages of silicon avalanche LEDs are shown, among which high speed and compatibility with silicon technology should be highlighted. Experimental avalanche LEDs based on nanostructured silicon were fabricated and studied. The results of controlling the electroluminescence spectrum of avalanche LEDs due to the choice of production conditions to form nanostructured silicon are presented. It was found that the temperature of the substrate during the deposition of the surface nanocomposite aluminum + silicon film affected the size of the formed silicon nanoparticles determining the spectral characteristics of avalanche LEDs. This allows shifting the maximum of their emission spectrum to a shorter wavelength region of the visible range due to the forming of smaller silicon nanoparticles. The authors have developed an optical interconnection system consisting of avalanche LEDs based on nanostructured silicon and a microchannel silicon wafer used to transmit a light signal. The study of various operating modes of the developed optoelectronic system was performed and an increase in the efficiency of optocouple based on avalanche LEDs to 0.2% due to the pulsed operating mode was achieved. It is shown that the efficiency of the optocouple increases with LED current and it is the pulsed mode of its operation that is characterized by the maximum current, which is due to more efficient removal of Joule heat in the intervals between pulses, ensuring stable operation of the entire system. The results obtained open up new opportunities for the development of optical interconnections between silicon chips and silicon optoelectronics in general.

The paper analyzes the parameters of silicon avalanche LEDs and their use for electron-optical signal transmission systems. The advantages of silicon avalanche LEDs are shown, among which high speed and compatibility with silicon technology should be highlighted. Experimental avalanche LEDs based on nanostructured silicon were fabricated and studied. The results of controlling the electroluminescence spectrum of avalanche LEDs due to the choice of production conditions to form nanostructured silicon are presented. It was found that the temperature of the substrate during the deposition of the surface nanocomposite aluminum + silicon film affected the size of the formed silicon nanoparticles determining the spectral characteristics of avalanche LEDs. This allows shifting the maximum of their emission spectrum to a shorter wavelength region of the visible range due to the forming of smaller silicon nanoparticles. The authors have developed an optical interconnection system consisting of avalanche LEDs based on nanostructured silicon and a microchannel silicon wafer used to transmit a light signal. The study of various operating modes of the developed optoelectronic system was performed and an increase in the efficiency of optocouple based on avalanche LEDs to 0.2% due to the pulsed operating mode was achieved. It is shown that the efficiency of the optocouple increases with LED current and it is the pulsed mode of its operation that is characterized by the maximum current, which is due to more efficient removal of Joule heat in the intervals between pulses, ensuring stable operation of the entire system. The results obtained open up new opportunities for the development of optical interconnections between silicon chips and silicon optoelectronics in general.

Heat-segregation calculations inside porous alumina barrier layer have been performed. It is shown that Joule heat on pore bottom surface is four orders of magnitude greater than in other porous oxide areas. This effect leads to local heating of this areas and microplasma formations during anodizing process. The recommendations about the heat dissipation efficiency increasing in order to improve the uniformity of the structures have been advised.

The temperature distribution within the anodic alumina during the anodic process has been studied. The temperature increase can reach 300 °C at high lever of Joule heat. The parameters of the heat process such as the heat temperature coefficient, the specific temperature change and the number of thermal process similarity criteria have been determined. The simulation of the temperature distribution within the test system for the given parameters of anodizing has been performed.

The electric field strength calculations inside porous alumina barrier layer during electrochemical anodizing in aqueous solutions of oxalic acid at a forming voltage of 90 to 250 V have been performed. The configuration of porous alumina cells with a porosity from 1 to 10 % have been used as the input data for calculations. It is found that the value of electric field strength inside porous alumina reaches 1010-1011 V/m. New phenomena and effects, appeared during alumina anodizing process with high forming voltages, have been analyzed.

Electrical characteristics of the heterostructure titanium dioxide/silicon illuminated by the sun light were theoretically modeled. The modeling process includes consideration of generation of the charge carriers and their transport through the practically important heterostructure n-TiO2/p-Si. The current through the structure under small external bias up to 0.6 V was found to depend nonlinearly on the light wavelength. It is controlled by the movement of the electrons from silicon to the titanium dioxide. The highest current corresponds to the wavelengths of about 600 nm. The results obtained are explained by the difference in the absorption coefficients and reflectivity of titanium dioxide and silicon which determine generation of nonequilibrium charge carriers in the heterostructure n-TiO2/p-Si. It was demonstrated that under illumination of the unbiased heterostructure with the light of 500–600 nm the generated electrons freely move from the titanium dioxide to silicon while the movement of holes is blocked. It helps to concentrate electrons in the relatively thin nearsurface layer of titanium dioxide and use them for catalytic purification of water and air by oxidation of organic pollutants at its surface. The regularities observed are important in the detailed analysis of electronic processes at the surface of wide band gap semiconducting metal oxides and their practical application in photocatalytic processes.

A study of the influence of the formation regimes of avalanche LEDs based on nanostructured silicon on the parameters of the formed devices, such as the light emission voltage and the stability of operation has been performed. These parameters are an important factor for the practical use of avalanche LEDs in the development of silicon photonics products, the progress of which is associated with the future of integrated electronics. For the first time, the technological operation of local through electrochemical anodizing of aluminum in various electrolytes for the formation of a separating dielectric of Schottky contacts is presented. The influence of the built-in electric charge in the separation dielectric of silicon avalanche LEDs on their current-voltage characteristics is studied. It was found that the built-in negative electric charge increases the breakdown voltage of the Schottky contact, which results in an increase of the light emission efficiency of the diode structures. An explanation of this effect is presented on the basis that the built-in negative electric charge inside the anode oxide also creates a space charge region in silicon, which helps to reduce the effect of the concentration of field lines at the edges of diode structures, performing the function of protecting the Schottky contact from edge effects as well as protective areas do. It has been established that the highest avalanche breakdown voltage is observed in diode structures with anodic oxide formed in an electrolyte based on an aqueous solution of phosphoric acid. An analysis of the characteristics of LEDs at different temperatures of silicon substrates showed an increase of breakdown voltage with increasing temperature, which is typical for avalanche breakdown during impact ionization. Stable light emission of the formed LEDs was demonstrated in a wide range of operating voltages (8–16 V). The use of silicon avalanche LEDs both as discrete devices and in integrated electronics in general has been discussed.

Porous silicon layers have been formed by electrochemical anodization of [Formula: see text]- and [Formula: see text]-type Si substrates. The volume of hydrogen desorbed from the surface of porous silicon after the anodic treatment was measured to be as large as 4[Formula: see text]wt.%. Regeneration of hydrogen can be achieved by porous silicon reanodization.

Design and manufacturing technology of 3D silicon photonic structures with optical interconnections through microchannel vias interposers were developed. Silicon chips placed over each other were separated by the silicon microchannel vias interposer served as a light waveguide. Light emitting diodes and photodiodes were formed at the inner surfaces of silicon chips from nanostructured silicon clusters embedded into alumina matrix. The developed structure is characterized by the current conversion efficiency of 0.1% and can operate in the GHz frequency range.

Physics, Chemistry and Application of Nanostructures, pp. 479-482 (2017) No AccessOPTICAL INTERCONNECTS BETWEEN SILICON CHIPS BASED ON LIGHT-EMITTING DIODES ON NANOSTRUCTURED SILICONA. A. Leshok, A. V. Dolbik, Le Dinh Vi, A. I. Matskevich, V. B. Vysotskii and S. V. ShvedovA. A. LeshokBelarusian State University of Informatics and Radioelectronics P. Browka 6, 220013 Minsk, Belarus, A. V. DolbikBelarusian State University of Informatics and Radioelectronics P. Browka 6, 220013 Minsk, Belarus, Le Dinh ViBelarusian State University of Informatics and Radioelectronics P. Browka 6, 220013 Minsk, Belarus, A. I. MatskevichBelarusian State University of Informatics and Radioelectronics P. Browka 6, 220013 Minsk, Belarus, V. B. VysotskiiOJSC "Integral" Kazintsa Sq. 1, 220108 Minsk, Belarus and S. V. ShvedovOJSC "Integral" Kazintsa Sq. 1, 220108 Minsk, Belarushttps://doi.org/10.1142/9789813224537_0111Cited by:1 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: Design and manufacturing technology of optical interconnects between silicon chips have been developed. Structures based on nanosize silicon clusters embedded in an alumina matrix are used as light-emitting diodes and photodetectors. The silicon microchannel plate vias are used as light-guiding channels. An experimental structure is fabricated and characterized with the current conversion efficiency of 0.3 %. FiguresReferencesRelatedDetailsCited By 13D Silicon Photonic Structures Based on Avalanche LED with Interconnections through Optical InterposerS. K. Lazarouk, A. A. Leshok, T. A. Kozlova, A. V. Dolbik, Le Dinh Vi, V. K. Ilkov, and V. A. Labunov2 April 2019 | International Journal of Nanoscience, Vol. 18, No. 03n04 Physics, Chemistry and Application of NanostructuresMetrics History PDF download

Experimental data and a model are presented, and the electric field that appears in porous alumina during electrochemical anodic oxidation of aluminum in electrolytes based on an aqueous solution of oxalic acid at a voltage of 90–250 V is calculated. It is found that the electric field in the layers with a porosity of 1–10% in growing alumina reaches 109–1010 V/m, which exceeds the electric strength of the material and causes microplasma patterns emitting visible light at the pore bottom, the self-organization of the structure of porous alumina, and the anisotropy of local porous anodizing. Moreover, other new effects are to be expected during aluminum anodizing under the conditions that ensure a high electric field inside the barrier layer of porous oxide.

Physics, Chemistry and Applications of Nanostructures, pp. 124-127 (2015) No AccessELECTRONIC AND ATOMIC STRUCTURE OF SILICON NANOCRYSTALS IN ALUMINUM MATRIX AND WITHOUT ITV. A. TEREKHOV, D. S. USOLTSEVA, S. Yu. TURISHCHEV, I. E. ZANIN, B. L. AGAPOV, A. A. LESHOK and P. S. KATSUBAV. A. TEREKHOVVoronezh State University, Universitetskaya 1, 394006 Voronezh, Russia, D. S. USOLTSEVAVoronezh State University, Universitetskaya 1, 394006 Voronezh, Russia, S. Yu. TURISHCHEVVoronezh State University, Universitetskaya 1, 394006 Voronezh, Russia, I. E. ZANINVoronezh State University, Universitetskaya 1, 394006 Voronezh, Russia, B. L. AGAPOVVoronezh State University, Universitetskaya 1, 394006 Voronezh, Russia, A. A. LESHOKBelarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus and P. S. KATSUBABelarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarushttps://doi.org/10.1142/9789814696524_0032Cited by:0 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: Al–Si nanocomposites have been produced by magnetron sputtering of a compound target onto a silicon substrate. Nanostructured silicon films have further been obtained by selective removal of aluminum. It has been found that silicon particles are nanocrystals with the mean size of 20-25 nm, which surface is covered by an amorphous layer with a thickness of ~5 nm. The band structure (in particular, near the bottom of the valence band) of the nanocomposite films was found to differ from the bulk material because of an influence of the aluminum matrix. After the aluminum removal, the valence band structure becomes identical to that in the bulk material. FiguresReferencesRelatedDetails Physics, Chemistry and Applications of NanostructuresMetrics History PDF download

Physics, Chemistry and Applications of Nanostructures, pp. 587-590 (2015) No AccessNANOSTRUCTURED SILICON FOR ANODES OF LITHIUM-ION BATTERIESA. A. LESHOK, D. A. SASINOVICH and V. E. BORISENKOA. A. LESHOKBelarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus, D. A. SASINOVICHBelarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarus and V. E. BORISENKOBelarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk, Belarushttps://doi.org/10.1142/9789814696524_0142Cited by:0 PreviousNext AboutSectionsPDF/EPUB ToolsAdd to favoritesDownload CitationsTrack CitationsRecommend to Library ShareShare onFacebookTwitterLinked InRedditEmail Abstract: Nanostructured silicon films have been fabricated on stainless steel by magnetron sputtering of an Al+Si composite target with a subsequent selective etching off the aluminum from the deposited film. They have been used as anodes in prototype Li-ion cells and subjected to cycling lithiation at high current densities. The fabricated films demonstrate an efficient Li accumulation/release during charging/discharging cycles combined with high mechanical durability. FiguresReferencesRelatedDetails Physics, Chemistry and Applications of NanostructuresMetrics History PDF download

The design and fabrication technology of integrated optical and electrical interconnects on silicon are developed. The light-emitting diodes in the presented construction are based on nanostructured silicon built in an alumina matrix. The optocouple with the current transforming coefficient of about 1 % is fabricated. The advantages of the developed design are shown in comparison with existing analogues.

Films of Al-Si nanocomposites produced by magnetron evaporation of a complex target onto a silicon substrate have been investigated using scanning electron microscopy, X-ray diffraction, ultrasoft X-ray emission spectroscopy, and X-ray absorption near edge structure spectroscopy. It has been found that silicon inclusions are nanocrystals with the mean size of 20–25 nm, with the surface covered by an amorphous silicon layer. The presence of the aluminum matrix in the initial films changes their band structures, in particular, near the bottom of the valence band. After the removal of aluminum, the structure of the valence band becomes identical to that in the bulk material and the structure of the conduction band indicates the presence of a disordered surface layer with a thickness of ∼5 nm.

Simulation of heat distribution inside a porous alumina layer being formed by electrochemical anodization of aluminum has shown that Joule heating of the pore bottom is about four orders of magnitude more intense than that near the aluminum/oxide interface. As a result, microplasma formation is expected in this region.

Nanostructured silicon films were fabricated by magnetron sputtering of an Al+Si composite target with a subsequent selective etching off the aluminum phase from the deposited film. It is shown that the film structure consists of silicon submicron conglomerates of 60-160 nm, which in turn are composed of nanoscale grains arranged as a "bunch of grapes". The regularities of the nanostructured silicon film formation are discussed.