The results of investigations by the method of Electron beam-induced current of p-n-junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region leads to short-circuiting of the p-n-junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra. Keywords: crystallites, tunnel junction, connecting element.

The technology for production one and two-cascade power laser converters was presented in this paper. According to the measurement results of the grown samples, an efficiency of 34.5

The characterization of Si-doped GaSb epitaxial layers, grown by metal-organic vapor-phase epitaxy at a constant SiH4 flow with a TMSb/TEGa ratio ranging from 1 to 50, is presented. X-ray diffraction rocking curves, photoluminescence spectra, Raman scattering spectra, resistivity, concentration of free carriers, and their mobility in GaSb:Si layers are analyzed.

The results of investigations by the method of Electron beam-induced current of p-n junctions based on InP with GaP crystallites in the space charge region are presented. It is shown that the introduction of crystallites into the space charge region leads to short-circuiting of the p-n junction. The quality of the material grown on top of the crystallites allows to create of photoactive regions, as evidenced by measurements of the photoluminescence spectra.

Charachterization of Si-doped GaSb epitaxial layers grown by metal organic vapor phase epitaxy is presented. Samples are grown at constant SiH4 flow with a TMSb/TEGa ratio ranged from 1 to 50. X-ray diffraction, Raman scattering, photoluminescence, resistivity, free carrier concentration and their mobility are studied.

Results are reported of using subcontact layers with energy gap width E g of 0.35 to 0.8 eV for obtaining low-resistivity electrical contacts to p -InP. An experimental dependence of the contact resistance on E g of the subcontact material In x Ga 1 – x As was obtained.

The paper presents the results of using sub-contact layers with a band gap from 0.35 to 0.8 eV to obtain low-resistance electrical contacts to p-InP. An experimental dependence of the contact resistance on the band gap of the sub-contact material In(x)Ga(1-x)As is obtained.

In the study of doped anisotypic heterostructures with layers of Ga(1-x)In(x)P(1-y)As(y) grown on InP substrates with a buffer layer of InP by MOC-hydride epitaxy, the presence of transition regions was detected in the Ga(1-x)In(x)P(1-y)As(y) layer on the substrate side for individual samples, across which the arsenic content (y) increased from the interface with the InP layer to the surface of the structure by the amount of (Δy) up to 0.15, and the content of elements of the third group (x) remained constant.

For the first time, the results of a study of the conditions for obtaining an atomically smooth surface of GaSb substrates are presented. It is shown experimentally that it is possible to improve the surface quality of the samples by changing the annealing conditions. The lowest obtained roughness of 1.27 nm was obtained at an annealing time of 16 minutes at a temperature of 650°C in the flow of TMSb and H2.

When studying doped anisotypic heterostructures with Ga1 – xInxAsyP1 – y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga1 – xInxAsyP1 – y layer from the side of the substrate in some of the samples, along which the arsenic content (y) increases from the interface with the InP layer to the surface of the structure by a Δy value of up to 0.15, while the content of elements of the third group (x) remains constant.

In this work, we studied the surface quality dependence of GaSb and InP substrates prepared by various methods of pre-epitaxial preparation, specifically, etching, annealing, and growing a buffer layer. Our main goal was to obtain the most efficient method of pre-epitaxial treatment, which allows preparing substrates with the best surface quality. The experimental results were evaluated by the parameter of the average roughness of the substrate. As a result a combination of the methods of pre-epithelial preparation of GaSb and InP substrates was selected, which made it possible to obtain a root-mean-square surface roughness about 0.6–0.8nm.

Abstract It is necessary to minimize the resistance of electrical contacts to reduce heat losses in photovoltaic converters of laser radiation. The paper describes ways to reduce the resistance of electrical contacts for p-InP by choosing the composition of the subcontact layer based on p-InGaAs. For this purpose, layers of p-InGaAs with different compositions and bandgaps were grown by the MOCVD method. AgMn/Ni/Au contact metallization was deposited on samples to compare the characteristics of electrical contacts. The minimum specific contact resistance was 7• 10−5 Ω-cm2 for the layer with Eg = 0.51 eV.

GaInPAs/InP heterostructures grown by low pressure (0.1 bar, 600 oC) metal-organic chemical vapor phase deposition were investigated. The thicknesses of grown GaInAsP layers were about 1 µm. For the epitaxial layers Ga1-xInxP1-yAsy) with average compositions of x = 0.77 – 0.87 and y = 0.07 – 0.42 the variation of V group elements content y with the epilayer depth were revealed, weher the compositions of V-group elements were changed up to Δy = 0.1 atomic fractions in V group elements sublattice. In most cases, y change occurs in a GaInAsP region up to 200 nm thick adjacent to the InP. In some cases, y changes throughout the whole GaInPAs layer thickness. Fo the epitaxial layers with a satisfactory crystal perfection the less was the mismatch between the substrate and the GaInPAs epitaxial layer, the smaller was the value of Δy. For GaInPAs layers characterized by a low degree of crystal perfection and a high lattice mismatch between GaInAsP and InP layers, the value of Δy was about zero. These data let us suggest that the incorporation of atoms of the V group in the epitaxial layer strongly depends on elastic deformation of the growing monolayer, that is mismatched with the underlying crystal surface.

The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission electron microscopy and methods of photo- and electroluminescence. It was found that two GaInAsSb solid solutions of different compositions were formed in the active regions of structures in the given growth conditions. The fabricated system was characterized by an emission wavelength of 4.96 μm at a temperature of 77 K. The results reveal new opportunities for bandgap engineering of semiconductor structures based on InAs/GaSb, which are designed for optoelectronic devices operating in the infrared range, provided by MOVPE.

This work demonstrates the possibility of growing Type-II InAs/GaSb superlattices by MOCVD. The Type-II InAs/GaSb superlattices consisting of 20 pairs of alternating InAs and GaSb layers of equal thickness (1 nm / 2 nm) were grown at a temperature of 500°C. The obtained structures were studied by transmission electron microscopy and electroluminescence. The electroluminescence spectra demonstrated a maximum at about 0.25 eV.

This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.

The first results showing the possibility of manufacturing InAs/GaSb superlattices by the metal-organic chemical vapor deposition (MOCVD) method are presented. The possibility of manufacturing heterostructures with an InAs/GaSb strained superlattice with layer thicknesses of 2–4 nm is experimentally demonstrated. The 77-K electroluminescence spectra of the structures show a long-wavelength peak at around 5.0 μm (0.25 eV). This peak is probably associated with the strained superlattice because solid solutions that could form on the basis of composite compounds do not provide this carrier-recombination energy.

GaInPAs/InP heterostructures grown by metalorganic chemical vapor-phase deposition at a temperature of 600°C and pressure of 0.1 bar are investigated. The thicknesses of the grown GaInAsP layers amount to about 1 μm. For Ga1 –xInxP1 –yAsy solid solutions with average compositions of x = 0.77–0.87 and y = 0.07–0.42, the variation in the content y of V-group atoms over the epitaxial-layer thickness by a value of Δy up to 0.1 atomic fractions in the sublattice of the V-group elements is revealed by secondary ion mass spectrometry. In most cases, a change in y occurs in the GaInAsP layer over a length to 200 nm from the InP heterointerface. In certain cases, y varies throughout the entire GaInPAs-layer thickness. For the epitaxial layers with satisfactory crystalline perfection, the value of Δy is less in the case of better lattice-matching between the GaInPAs epitaxial layer and the substrate. For GaInPAs layers strongly lattice-mismatched with the substrate and characterized by a low degree of crystalline perfection, the value of Δy is close to zero. All these facts enable us to assume that it is elastic deformations arising in the forming monolayer lattice-mismatched with the growing surface that affect the incorporation of V-group atoms into the forming crystalline lattice.

The results of studies of nominally undoped epitaxial p-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 Ω cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of n-GaSb substrates used for the growth of nominally undoped GaSb layers.

The paper presents the results of studies of grown epitaxial GaSb layers by MOCVD method at a ratio of TMSb/TEGa from 1 to 50. When the ratio TMSb/TEGa=50 were grown epitaxial GaSb layers with a specific electrical resistance of 400 Ω•cm. Crystalline perfection of these layers was evaluated by several methods and remained commensurate with the quality of the used substrates.