The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.

The results of the development of vertical-cavity surface emitting lasers based on Al $${}_{x}$$ Ga $${}_{1-x}$$ As and In $${}_{y}$$ Ga $${}_{1-y}$$ As solid solutions are presented. Developed lasers demonstrate stable single-mode operation at wavelengths of 794.9 and 894.6 nm, which offers the prospects of their applications in miniature quantum frequency standards based on $${}^{87}$$ Rb and $${}^{133}$$ Cs.

The design of microcavity for single quantum dot based emitters is developed. The microcavity consists of semiconductor distributed Bragg reflector and microlens fabricated by selective oxidation of gradient AlxGa1-xAs layer. The microcavity design provides a high external quantum efficiency of radiation extraction (up to 70%) and a high efficiency of radiation input into an optical fiber. The microcavity can be used to create emitters of single photons and emitters of entangled photon pairs based on single semiconductor quantum dots.

The destruction of a superinsulating state by pulsed voltage in thin NbTiN films is studied. A delay of the destruction of the superinsulating state after the rising edge of the pulse is discovered. The time of recovery and the time of destruction of the superinsulating state are determined.

Исследовано разрушение сверхизоляторного состояния импульсными сигналами напряжения в тонких пленках NbTiN. Обнаружено запаздывание разрушения сверхизоляторного состояния от фронта импульса. Определено время восстановления и время разрушения сверхизоляторного состояния.

В докладе будет представлен краткий обзор результатов, полученных в ИФП СО РАН, в области разработки сверхминиатюрных излучателей на основе одиночных квантовых точек (КТ) и лазеров с вертикальным резонатором (ЛВР) для миниатюрных квантовых стандартов частоты (КСЧ).

The paper states the operating principles of subminiature semiconductor emitters and offers the research results of the performance for those emitters that were developed and manufactured at the Rzhanov Institute of Semiconductor physics of SB RAS over the last three years. Single photon emitter based on Al $${}_{x}$$ In $${}_{1-x}$$ As/Al $${}_{y}$$ Ga $${}_{1-y}$$ As quantum dots has been developed. Hanbury Brown and Twiss experiment has been carried out to measure the photon statistics. The photon correlation function demonstrates a clear photon antibunching effect ( $$g^{2}$$ (0) $$\approx$$ 0.04), which is a direct evidence of single photon emission by single Al $${}_{x}$$ In $${}_{1-x}$$ As quantum dots. The results of developing single-mode vertical-cavity surface-emitting lasers with a wavelength of 794.8 nm future-oriented for application in chip-scale atomic clock and operating at the transition 5S $${}_{1/2}\to$$ 5P $${}_{1/2}$$ of Rb $${}^{87}$$ are reported.

The results of the development and implementation of a single photon source based on a bottom semiconductor Bragg reflector, top deterministic GaAs microlens structures and a single (111) In(Ga)As QD are presented. The structure of the microcavity ensures effective pumping of a single (111) In(Ga)As QD and high emission output efficiency, a clear single-photon emission was detected with a second-order correlation function at zero delay g((2))(0) = 0.07. A system of QD's on the basis of AlXIn1-XAs/AlYGa1-YAs solid solutions has been studied. The usage of broadband AlXIn1-XAs solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlXIn1-XAs quantum dots grown according to the Stranski-Krastanov mechanism are studied by the cryogenic microphotoluminescence method.

The results of investigations of the optical characteristics of nonclassical light sources based on selectively positioned microlens structures and single (111) In(Ga)As quantum dots grown on a (111) BGaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing second-order correlation functions g (2) (τ); g (2) (0) = 0.07. The fine structure of the exciton states of (111) In(Ga)As quantum dots is investigated. It is shown that, in the energy range of 1.320–1.345 eV, the splitting of exciton states is comparable to the natural width of the exciton lines, which is of interest for developing photon-pair emitters based on them.

The structure and photoluminescence of CH3NH3PbI3 (lead triiodide methylammonium) synthesized perovskite crystals are investigated in a wide temperature range. As temperature rises to 130–140 K, there is a junction from an orthorhombic to tetragonal crystal lattice with a change in the bandwidth. An increase in the stationary photoluminescence intensity at room temperature under the influence of exciting emission is revealed. A model explaining the observed growth of photoluminescence is proposed.

Hybrid microcavity for single quantum dot based emitters has been developed and realized. The microcavity consists of semiconductor distributed Bragg reflector and microlens, which is selectively positioned over a single (111) In(Ga)As quantum dot. We have demonstrated pure single photon emission with g(2)(0) = 0.07. The fine structure of exciton states of (111) In(Ga)As quantum dots is studied. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of these quantum dots.

Люминесценция одиночных квантовых точек InAs и AlInAsВ. А. Гайслер, И

A system of quantum dots based on Al x In1−xAs/Al y Ga1−yAs solid solutions is investigated. The use of Al x In1−xAs wide-gap solid solutions as the basis of quantum dots substantially extends the spectral emission range to the short-wavelength region, including the wavelength region near 770 nm, which is of interest for the development of aerospace systems of quantum cryptography. The optical characteristics of Al x In1−xAs single quantum dots grown by the Stranski–Krastanov mechanism were studied by cryogenic microphotoluminescence. The statistics of the emission of single quantum dot excitons was studied using a Hanbury Brown–Twiss interferometer. The pair photon correlation function indicates the sub-Poissonian nature of the emission statistics, which directly confirms the possibility of developing single-photon emitters based on Al x In1−xAs quantum dots. The fine structure of quantum dot exciton states was investigated at wavelengths near 770 nm. The splitting of the exciton states is found to be similar to the natural width of exciton lines, which is of great interest for the development of entangled photon pair emitters based on Al x In1−xAs quantum dots.

AbstractA system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap Al_ x In_1 –_ x As alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.

A system of AlInAs- and InGaAs(111)-based quantum dots is studied. The use of wide-gap AlxIn1 –xAs alloys as a basis for quantum dots provides a means for substantially extending the spectral region of emission to shorter wavelengths, including the region close to 770 nm which is of interest for the engineering of aerospace systems of quantum cryptography. The fine structure of exciton states in AlInAs and InGaAs(111) quantum dots is studied. It is shown that, for a set of quantum dots, the splitting of exciton states is comparable to the natural width of exciton lines, which is of interest for the engineering of emitters of photon pairs on the basis of these quantum dots.

A system of quantum dots on the basis of AlxIn1-xAs/AlyGa1-y As solid solutions has been studied. The usage of broadband AlxIn1-x solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlxIn1-xAs quantum dots grown according to the Stranski–Krastanov mechanism are studied by the cryogenic microphotoluminescence method. The fine structure of exciton states of quantum dots is studied in the wavelength region near 770 nm. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of AlxAs1-x quantum dots.

The results of numerical modeling and investigation of a hybrid microcavity based on a semiconductor Bragg reflector and a microlens selectively positioned above a single (111) In(Ga) As quantum dot are presented. Emitters based on the hybrid microcavity demonstrate the effective pumping of a single quantum dot and high emission output efficiency. The microcavity design can be used to implement emitters of polarization-entangled photon pairs based on single semiconductor quantum dots.

The operating principles of subminiature semiconductor emitters are formulated in this chapter, and the research results of the performance for those emitters that have been developed and manufactured at the SB RAS Institute of Semiconductor Physics for the last 5 years are given. The results of developing single-mode vertical cavity surface emitting lasers with a wavelength of 795 nm future-oriented for application in a chip scale atomic clock operating at a transition of 5S1/2→5P1/2 of Rb87 atoms are reported, as well as the results of developing a fully semiconductor Bragg microcavity for single-photon emitters. The latter combines current pumping selectively positioned InAs quantum dots, high external quantum efficiency, and a low level of output radiation divergence.

Представлены результаты численного моделирования и исследования гибридного микрорезонатора на основе полупроводникового брэгговского отражателя и селективно позиционированной над одиночной (111) In(Ga)As-квантовой точкой микролинзы. Излучатели на основе гибридного микрорезонатора демонстрируют эффективную накачку одиночной квантовой точки и высокую эффективность вывода излучения. Дизайн микрорезонатора может быть использован для реализации излучателей фотонных пар, запутанных по поляризации, на основе одиночных полупроводниковых квантовых точек. DOI: 10.21883/FTP.2017.11.45089.03