Magnetic nanoelements for developing spin-logic systems are considered. Special attention is given to the development of spin magnetoresistive nanoelements.

In article the basic is constructive-technological decisions applied in galvanic isolators (GI) with giant magnetoresistive by effect are considered. Results of research of spin-valve magnetoresistive (SVMR) nanostructures with an antiferromagnetic film (Ta–FeNiCo–CoFe–Cu–CoFe–FeNiCo–FeMn–Ta) for creation on their basis domestic digital GI are presented. Are received magnetoresistive elements on the basis of the developed technological processes of formation nanostructures with size SVMR of effect 7–8%, at a room temperature.

We show the results of our studies related to control over objects by the magnetic field they generate. We propose a model to compute the current and its magnetic field in a conductor with a rectangular defect. We describe the developed and produced anisotropic magnetoresistive gradiometer head to measure surface magnetic fields in order to control the functionality of electronic components by the magnetic field they generate. We describe the operation of a testbed with a test circuit in the plotter.

Рассмотрены результаты исследований возможностей контроля изделий по создаваемому ими магнитному полю. Предложена модель расчета тока и создаваемого им магнитного поля в проводнике с прямоугольным дефектом. Описана разработанная и изготовленная анизотропная магниторезистивная головка-градиометр для измерения приповерхностных магнитных полей для контроля функционирования электронных компонент по создаваемому ими магнитному полю. Описана работа стенда с тестовой платой в составе плоттера.

We survey the results of studies and development of promising magnetic logical nanoelements and creating spin logic systems based on them. This subfield of spintronics is a development of the ongoing studies of elements with giant magnetic resistance, including elements with a shift of the spin moment and moving domain boundaries, and lets one create new systems of spin logic based on these elements characterized by operational elements of nanometer size, high performance, energy independence, resistance to radiation, and a wide temperature range.

New type of anisotropic magneto-resistive transducer of magnetic field representing magnetic field gradiometer with even volt-oersted characteristic saturated with magnetic field increase, is considered. Results of its development are given as magneto-sensitive nanoelement for biosensor and magnetic head.

The review considered the state-of-the-art in the development of devices for detection of the agents of disease on the basis of the Lab on a chip (LOC) biosensors whose detecting element is a matrix of thin-film anisotropic magnetoresistive (AMR), magnetoresistive (GMR), or spin-tunnel magnetoresistive (STMR) magnetic field sensors based on the multi-chip planar technology. Data were presented on the nanospherical superparamagnetics used in many biological applications as the magnetic labels. The review is oriented to the technical experts, and in this connection the biological fundamentals of the method of determination of biological activity with the use of the MR biosensor were given in a nutshell.

Anisotropic magnetoresistive magnetic field sensor with an odd-function symmetry output characteristic is developed for use in magnetic field analysis microsystems. Prototypes of magnetic field sensor with maximal sensitivity about 0,7 mV/V/Oe are fabricated and characterised.

The magnetic and magnetooptical properties of spin-tunneling multilayer permalloy-silicon carbide nanoheterostructures deposited by rf sputtering have been studied. Magnetometric and magnetooptical methods are used to show that the magnetic-semiconducting nanostructures have a complex magnetic structure and to track the evolution of the magnetic properties of these structures as functions of the magnetizing field and the thickness and sequence order of ferromagnetic and semiconducting layers in them. The induction response and the field and orientation dependences of the transversal Kerr effect are found to have anomalies. The experimental results are interpreted under the assumption that there is exchange interaction between the ferromagnetic and semiconducting layers through a thin magnetically ordered transition layer formed inside the interface.

The design and operation of thin-film multilayer sensors based on the anisotropic magnetoresistive effect are considered from the theoretical and experimental viewpoints.

An analysis is performed of the methods far control and serviceability of spin-valve, thin-film, multilayer, magnetoresistive storage elements (MRSE), and features of the basic predictable types of MRSEs are defined. A comparison is made between MRSEs that differ in the methods of depositing films with various remagnetization fields in adjacent ferromagnetic layers and also between the structures of elements with, different topologies of storage elements and readout elements.