Schematic peculiarities of pulsed power source and modulator-shaper for working on high instability plasma load are discussed. In its construction should be provided for several levels of overcurrent protection. First of all modules of electronic protection should be integrated into the control driver system of IGBT modules and must provide a quick disconnect power switches in excess of the allowable values of pulse current. The next level of overcurrent protection in pulse power generator is a protection against overcurrent in the load circuit. Operating threshold of current protection in this case must be set to the maximum value of current in the secondary circuit. In order to limit the emission of stray voltage on the power pulses in a moment of switching of power switches a restrictive RC snubbers parallel to the collectors and the emitters of transistors must be installed. It is also appropriate application of software-controlled configurating of electrical power at the output of a pulsed power supply.

The results of experimental research of the dependence of the rate of photoresist films ashing from the surface of silicon plates by microwave discharge plasma of air and О 2 vs. operational processing modes are presented. Plasma chemical processing had been carried out in a resonator-type plasmatron with partial filling by plasma (V plasma ≥ 9500 cm3) of the resonant cavity volume. Experiments were carried out using, as a part of a high voltage power source, the microwave magnetron of the schemes of one-or two-half-period straightening with doubling voltage.

The paper presents results of investigations pertaining to the possibility of regulating instantaneous power output in a magnetron of M-105 (M-112)-type by changing the capacity value of a capacitor in structure diagram for doubling voltage of high-voltage power supply on the basis of a step-up transformer operating in the saturation regime.

A method of rapid determination of gas pressure value, which provides the most favorable conditions for microwave plasma chemical processing at low vacuum, is developed. The method is based on the characteristic property of microwave plasma materials processing which consists in pulsation nature of microwave discharge.

Results of researches an operation of the average power level microwave magnetron on partially filled volume of resonator with plasma and active load are presented. In one group of experiments a low-temperature nonequilibrium plasma of self-sustained microwave discharge without and with plates of single-crystal silicon in it were used as a load. In the second group different amount of water or silicon plates which absorb the microwave energy in a good way were used as an active load. According to the carried experiments there is influence of different type of medium located in the volume of microwave plasmatron resonator on the character of form and amplitude of magnetron anode current impulses was studied.

Results of investigation of a method of regulation of instantaneous power output of a magnetron by means of changing of capacity of a condenser in a voltage doubler of high-voltage power supply of a magnetron are presented.

The design of dual-frequency plasma discharge device developed for the purposes of reactive-ion etching of materials during the formation of elements of a microstructure of electronic products is presented. A basis of a design makes microwave resonator type plasmatron with an applicator in the form of the slotted waveguide antenna closed in a ring. On the axis of the microwave applicator the quartz pumped out chamber is located. Both ends of it are closed by flat electrodes of low-frequency capacitor-type gas discharge system. Dual-frequency discharge is initiated in the vacuum chamber under the joint action of microwave (f(1)approximate to 2.45GHz) and low frequency (f(2)approximate to 1-50 kHz) electromagnetic fields. The bulk type microwave discharge system serves for effective dissociation and ionization of molecules of plasma forming gas and the low-frequency capacitor type discharge system with parallel-plane electrodes allows to organize precision plasma processing of the sample by the directed stream of chemically active charged particles.

The design and peculiarities of operation of a high-voltage source of pulse voltage developed for initiation pulsated gas discharge in conditions of low vacuum are presented. The source of a pulse voltage enter a high-voltage source with stabilized direct polarity voltage which has the isolated output, the pulse modulator for forming electric output signals with required parameters and the microprocessor control system integrated to them. Soft-ware operated high-voltage pulse source of direct polarity voltage is captured by contour of an analog feedback on a voltage and current with an opportunity of digital threshold regulation of output voltage value. The pulse modulator configures the form of the output impulses, the set frequency and relative pulse duration. The source of a pulse voltage provides following output parameters: an output voltage - 600-1200V; an output current - up to 4 A; frequency of impulses - 545 kHz; relative pulse duration - 2-10. Time of definition of an overland on a current does not exceed 55 nanoseconds, time of operation protective disconnect similar to 1 microsecond.

A design of dual-frequency plasma discharge device developed for the purposes of reactive-ion etching of materials during formation of elements of a microstructure of products of electronic technology is presented. A basis of the design forms a microwave plasmatron of a cavity type with an applicator in the form of a slotted waveguide antenna locked up in a ring. Along the axis of the microwave applicator an evacuated quartz chamber is located. Both ends of it are closed by flat electrodes of low-frequency gas-discharge gas system of a capacity type. Dual-frequency discharge is initiated in the evacuated chamber under joint action of microwave (f1≈ 2.45GHz) and low frequency (f2≈ 1…50 kHz) of electromagnetic fields.

The results of technological tests of the designed and manufactured discharge device intended for plasma etching of materials used in microelectronic fabrication are presented. The main feature of the process, realized in that device, is a controllable action on a material surface by chemically active particles, formed in a combined (microwave and low frequency fields) discharge. The experimental results demonstrated high quantitative and qualitative performances of processes of removing materials (in particular etching of monocrystalline silicon) in the designed discharge device.

Cellulose-based white typographical paper was treated by radio frequency (rf) (5.28 MHz) and microwave (2.45 GHz) discharge plasma as well as by rf magnetic field within the prebreakdown mode operation of a capacitively coupled rf discharge. Different parameters of plasma (duration of treatment, power, gas pressure) have been varied in order to investigate their influence on the paper process. Structural features of paper before and after the treatment have been investigated by attenuated total reflectance (ATR) and diffuse reflectance (DRIFT) infrared spectroscopy. The transformation of polarized light on paper surface was studied using a laser goniophotometric Stokes polarimeter. The DRIFT spectra are transformed in the range of 2800 - 3300 cm(-1) and 750 - 1000 cm-1 as a result of plasma treatment of paper. The rf magnetic field action upon the paper results in a frequency shift in ATR spectra in the range of 1300 - 1500 cm-1 as well as in the structural order reduction of cellulose molecules that leads to the decrease of bi-directional reflection and transmission coefficients of polarized light strikes through the paper sheet. The structural features of modified paper have been discussed taking into account orientation effects of cellulose macromolecules in the paper surface and change their conformational structure.

Results of studying combined (microwave and low frequency fields) discharge in oxygen by optical emission spectroscopy method are presented. Discharge was raised in plasmatron on the basis of cylindrical resonator in the form of closed in a ring waveguide on which there are cracks in the internal wall for microwave energy radiation. Inside of the resonator there is vacuumed discharge chamber closed from butts by metal caps. In the top butt the isolated electrode on which low frequency potential applied is located. At the bottom butt there is the earthed substrate-holder electrode. Optical emission spectrum was registered by means of spectrometer SL-2-2048 ISA.Experiments were spent with reference to a problem of removal of a photoresist masks from silicon plates.During experimental part of a work spectral lines for the control of photoresist mask removal process were chosen. Dependences of quantitative and qualitative characteristics of photoresist removal process from operational modes of processing (pressure of discharge forming gas, values of microwave power, low frequency potential on a substrate-holder electrode ets.) were studied.