Low-permittivity LiMg14AlO16 ceramics were prepared via the conventional solid-state reaction method. The as-prepared LiMg14AlO16 were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a network analyzer. XRD analysis and Rietveld refinement confirmed that LiMg14AlO16 ceramics possess a rock-salt structure with the space group Fm-3m (225). The bond energy and lattice energy of LiMg14AlO16 ceramics were calculated based on the P–V-L theory. The results show that the Mg-O bond plays a dominant role in the relative permittivity (εr) of LiMg14AlO16 ceramics, with a contribution ratio of 87.6

A series of Ba0.7Sr0.2Ca0.1Cu0.9A0.1Si2O6 (A = Zn, Zn1/2Mg1/2, Zn1/3Mg1/3Co1/3, Zn1/4Mg1/4Co1/4Ni1/4, Zn1/5Mg1/5Co1/5Ni1/5Mn1/5) ceramics were fabricated through the entropy configuration design strategy, and the influence of entropy variations on the dielectric properties of Ba0.7Sr0.2Ca0.1Cu0.9A0.1Si2O6 ceramics was systematically investigated, and the optimization mechanism of dielectric property under entropy regulation was elucidated. Dense Ba0.7Sr0.2Ca0.1Cu0.9A0.1Si2O6 ceramics with a tetragonal structure (I41-acd) were obtained by sintering at 960 980 °C. The results showed that changing the entropy value can not only reduce the sintering temperature of Ba0.7Sr0.2Ca0.1Cu0.9A0.1Si2O6 ceramics, but also adjust the temperature stability of the resonant frequency. Among them, the Ba0.7Sr0.2Ca0.1Cu0.9(Zn1/5Mg1/5Co1/5Ni1/5Mn1/5)0.1Si2O6 ceramic fired at 960 °C exhibited the best microwave dielectric properties (τf = − 9.6 ppm/°C, εr = 7.94, Q × f = 14,978 GHz). This indicates that the resonant frequency temperature stability of Ba0.7Sr0.2Ca0.1Cu0.9A0.1Si2O6 ceramics can be optimized by adjusting the A-site entropy value, and this strategy has broad application prospects in the development of high-temperature stability microwave dielectric ceramics.

Maximizing the spatial separation of photogenerated charge carriers while maintaining their strong redox potential remains the primary challenge in sustainable solar driven hydrogen production. In this study, a novel 1D/1D WO3/FeWO4 S-scheme heterostructure was synthesized via a facile two-step hydrothermal method. The morphological characterization studies confirm that 1D FeWO4 nanowires are tightly anchored onto 1D WO3 nanorods, forming a layered architecture that exposes abundant active sites and establishes continuous longitudinal charge transfer channels. Therefore, the optimized WO3/FeWO4 heterostructure exhibits a photocatalytic hydrogen evolution rate of 1602 µmol g-1 h-1, representing an approximately 3.6-fold enhancement compared to pristine FeWO4, while pristine WO3 demonstrates negligible activity. Density functional theory calculations combined with surface analysis suggest that the intrinsic work function difference between WO3 and FeWO4 promotes spontaneous interface electron redistribution. This creates a strong internal electric field that is proposed to facilitate the S-scheme charge transfer pathway under illumination, thereby suppressing photocarriers with weak redox ability while retaining the strongly reducing electrons on FeWO4. This work provides a viable approach for combining dimensional engineering with interfacial electric field modulation to construct efficient S-scheme photocatalysts.

Rational design of photoelectrodes with abundant active sites and efficient interfacial charge transport is vital for improving photoelectrocatalytic performance. In this work, WO3-based heterojunction photoelectrodes were fabricated in situ through a hydrothermal, electrodeposition and annealing process and employed for the photoelectrocatalytic degradation of phenol. The deposition time was optimized to regulate the microstructure and interfacial properties. After annealing, a well-defined two-dimensional ternary heterojunction composed of WO3, CuWO4, and CuO nanosheet arrays was obtained. This nanoarray architecture maximizes the active sites and specific surface area. Furthermore, the ternary interface promotes efficient charge separation via optimized band alignment and strong coupling. Consequently, the optimal photoanode achieves a photocurrent of 0.91 mA cm-2 (1.21 V vs. RHE), outperforming pristine WO3 and binary WO3/CuWO4 by factors of 5.2 and 2.2, respectively. The corresponding phenol degradation efficiency reached 84.5%, with a kinetic rate constant of 0.935 h-1. The improved photoelectrocatalytic activity arises from the synergistic effect of the engineered heterointerface, which accelerates carrier transfer and suppresses recombination. Density functional theory calculations further elucidated the electronic band structures, confirming the stepped-band alignment that favors cascade charge transfer. These findings present a promising strategy for engineering durable and high-efficiency heterostructured photoanodes suitable for wastewater remediation.

The CaCu1-xZnxP2O7 (0 <= x <= 0.20) ceramics were synthesized by solid state reaction by using CaCO3, ZnO, CuO, and (NH4)(2)HPO4 as raw materials and the effect of substitution of Zn2+ for Cu2+ on the phase composition, sintering behavior, and microwave dielectric properties of CaCu1-xZnxP2O7 (0 <= x <= 0.20) ceramics was also investigated. The substitution of Zn2+ for Cu2+ does not alter the phase compositions, yet it significantly enhances the Q & times;f value of CaCu1-xZnxP2O7 (0 <= x <= 0.20) ceramics. Especially, the dense CaCu1-xZnxP2O7 (x = 0.15) ceramic sintered at 900 degrees C exhibits optimal microwave dielectric properties: epsilon(r) = 7.4, Q & times;f = 81000 GHz, and tau(f) = -79.5 ppm/degrees C, indicating that the strategy of substituting Cu2+ with Zn2+ to improve the Q & times;f of CaCu1-xZnxP2O7 is highly effective.

Reciprocating electroplated diamond wire sawing (DWS) has become the dominant technique for slicing monocrystalline silicon ingots, where surface roughness serves as a critical indicator of wafer quality. This study systematically investigates the influence of key parameters—including wire speed, reciprocation period, feed rate, and roller lifespan—on the surface morphology of monocrystalline silicon wafers. Through detailed morphological observations and experimental analysis, the formation mechanisms of periodic saw marks are explored. The results reveal that surface roughness increases with wire speed, reciprocation period, and roller wear. Interestingly, the relationship between surface roughness and feed rate mirrors the stress–strain behavior of high-carbon steel. These findings provide new insights into the origin of saw marks in large-size wafers processed with ultra-fine electroplated diamond wires and support the optimization of slicing processes for high-efficiency photovoltaic applications.

Semiconductor heterojunctions are effective architectures for promoting charge separation, where precise control over the interfacial structure is crucial for maximizing the utilization of photoinduced charge carriers. However, achieving strong interfacial coupling during synthesis remains challenging, because uncontrolled nucleation often leads to nanoparticle aggregation and inefficient interfacial charge transfer. Herein, we demonstrate that a solvent chain length-mediated interfacial engineering strategy can precisely tailor the crystallization behavior and construct intimate WO3/ZnWO4 heterojunction photoanodes via a solvothermal process. The longer carbon chain of n-butanol provides a favorable balance between solvent polarity and viscosity, which is likely to regulate the nucleation and growth behavior of ZnWO4 and thereby promote its uniform dispersion and close interfacial contact with WO3. As a result, the optimized n-butanol-mediated photoanode achieves a photocurrent density of 2.15 mA cm−2 at 1.23 V vs. RHE and a bisphenol A degradation rate constant of 0.026 min−1, which are 2.6 and 3.9 times higher than those of pristine WO3, respectively. Mechanistic analysis suggests that the enhanced performance originates from the well coupled Type-II WO3/ZnWO4 heterojunction formed under the optimized solvent environment. In this system, the Type-II band offset together with the external bias promotes directional charge separation and electron extraction, leading to hole accumulation and efficient ·OH generation. This study highlights the important role of solvent chain length in interfacial assembly and provides a rational strategy for designing high performance heterojunction photoanodes for environmental remediation.

Accurately adjusting crystallization behavior and interface coupling via solvent engineering is crucial for achieving excellent space charge separation and developing advanced heterojunction photoelectrodes. This study describes the fabrication of WO3/ZnWO4 heterojunctions through a solvothermal strategy utilizing alcohol solvents with gradually increased carbon chain lengths (ethanol, n-propanol, and n-butanol). The optimized n-butanol mediated heterojunction exhibits excellent photoelectrocatalytic activity, achieving a photocurrent density of 2.15 mA cm-2 at 1.23 V vs. RHE and a bisphenol A degradation rate constant of 0.026 min-1. These values are 2.6 times and 3.9 times higher than the pristine WO3, respectively. Various characterization techniques and density functional theory calculations confirm the formation of a type-II WO3/ZnWO4 heterojunction with an intimate and well-defined interface. The extended carbon chain of n-butanol provides an optimal balance between solvent polarity and viscosity, which precisely adjusts the crystallization kinetics and promotes intimate heterointerface contact, which provides a general strategy for designing advanced nanostructures through dynamically controlled interface assembly.

Photodetectors are crucial optoelectronic devices that facilitate the conversion of optical signals into electrical responses. They can be broadly categorized into two types based on their operational mode: externally powered and self-powered devices. Cobalt( II , III) oxide (Co3O4) has garnered significant attention as a promising semiconductor material for optoelectronic applications owing to its non-toxic nature, abundance on Earth, and dual optical band gaps. Graphene, with its exceptional optical, electrical, and mechanical properties, along with a large specific surface area, presents itself as an ideal candidate for use in doping materials. Bismuth vanadate (BiVO4), an N-type semiconductor, is recognized for its excellent stability under harsh conditions and has attracted widespread research interest in areas such as photoelectrochemical (PEC) water splitting, energy storage, dye degradation, and photocatalysis, due to its non-toxic, abundant, and cost-effective characteristics. By doping graphene to modify the surface of Co(3)O(4)and constructing a heterojunction via the PN semiconductor principle, a novel approach for self-powered photodetectors is proposed. In this study, Co(3)O(4)thin films and Co3O4/graphene(G) composite films, with varying graphene molar ratios, were successfully fabricated on fluorine-doped tin oxide (FTO) conductive glass using a hydrothermal method. The optimal graphene doping ratio for Co3O4/G films was determined, and BiVO4 was subsequently spin-coated onto the surface of the Co3O4/G films, resulting in the fabrication of (Co3O4/G) @BiVO4 composite thin-film-based photodetectors. Photodetector performance was evaluated using an electrochemical workstation (CHI760E) and a xenon lamp (CEL-S500) to simulate sunlight and measure the photogenerated current. Raman spectroscopy was employed to confirm the presence of graphene and evaluate its defect levels. The microstructure of the samples was analyzed using Field-Emission Scanning Electron Microscopy (FESEM) and transmission electron microscopy (TEM). The phase and chemical bonding states of the samples were investigated by X-ray diffraction (XRD) and X-ray Photoelectron Spectroscopy (XPS), while optical absorption properties were characterized using UV-Vis spectrophotometry (UV-3600). The results indicated that the Co3O4/G film with a graphene doping ratio of 1 & ratio;2 exhibited the most stable photogenerated current, with minimal decay, and its photocurrent was 10.8 times greater than that of pure Co(3)O(4)films. Furthermore, the morphology of the (Co3O4/G) film transitioned from a uniform, compact grass-like structure to a graphene-like network. BiVO4, prepared by spin-coating, formed a block-like coating on the Co(3)O(4)nanorods. The (Co3O4/G) @BiVO4 composite film exhibited enhanced photocurrent and light absorption properties, with a photocurrent 6.3 times higher than that of Co3O4/G films. The device demonstrated a responsivity of 2.52 mAW-1 and a detectivity of 2.693x10(12) Jones. This composite film structure can provide an ideal research idea for the preparation of simple, non-toxic and harmless, and miniaturized high-performance

Bone repair materials aim to mimic the characteristics of human bone, striving for matched electrical activity, optimized porous structure, excellent hydrophilicity, and appropriate degradation rate. K0.48Na0.52NbO3 (KNN)/ polylactic acid (PLA) composite materials were prepared by solution casting method, and the X-ray results indicate that the addition of KNN powder disrupts the ordered structure of PLA. The KNN powders with an orthorhombic phase structure were embedded within the PLA matrix. Scanning electron microscopy (SEM) results indicate that with increasing addition of KNN powder, the number of pores gradually increases. However, when the KNN content reaches 40 wt%, KNN powder aggregates on the surface of the KNN/PLA samples. The results indicate that the sample exhibits optimal performance when x = 0.3, with a porosity of 20.6 %, a piezoelectric constant of 1.5 pC/N, a post-polarization water contact angle (WCA) of 52.6 degrees, and a degradation weight loss rate (DWLR) of 4.3 % in water after 28 days.

The porous 0.3K0.48Na0.52NbO3/polylactic acid (KNN/PLA-Pi, i = 0, 1, 2, 3, 4) composites were prepared using a nonsolvent-induced phase separation method. The effects of C2H5OH content on the porosity, degradation behavior and electroactivity of the composites were investigated. The addition of C2H5OH did not alter the phase composition of the obtained porous KNN/PLA-Pi composites. However, it significantly increased the porosity and notably enhanced the degradation rate. Especially by adding 30 wt% C2H5OH, the obtained KNN/PLA-P3composite exhibited the optimal performance with a porosity of 69.5 %, a degradation weight loss rate (WLR) in water of 16.4 % after 28 d, a piezoelectric constant (d33) of 1.0 pC/N, a relative dielectric constant (epsilon r) of 5.5, and a water contact angle (CA) of 75.3 degrees after polarization. These results give the underlying enlightenments needed for design and fabrication of electroactive bone repair composite, which match human bones well in terms of porosity and degradation rate.

Self-powered broadband photodetectors operating in the ultraviolet-visible-near infrared (UV-Vis-NIR) range are pivotal for various applications, including optical communication, military surveillance, multispectral sensing, and environmental monitoring. In this study, we present an innovative approach to fabricate a bottlebrush nanostructure employing the Co3O4/ZnO PN junction. This unique design allows the photodetector to function efficiently without bias condi-tions, providing a versatile platform for a wide range of detection capabilities. The morphology of the photodetector is precisely controlled by manipulating the concentration of the growth solution containing cobalt tetroxide. Specifically, maintaining a concentration of 10 mM results in a welldefined bottlebrush heterojunction that exhibits highly efficient detection performance in the UV-Vis-NIR region. The maximum achievable responsivity (R) and specific detectivity. (D) are noteworthy, reaching values of 103.3 mA W-1 and 1.58 x 1014 Jones, respectively. These findings present a novel strategy for developing broadband photodetectors based on stable, nontoxic, and cost-effective metal oxides, opening new possibilities for advancements in photodetection technology.

Photodetectors are indispensable optoelectronic devices crucial for various applications such as optical communication, military reconnaissance, multispectral sensing, and environmental surveillance. In this study, we present a photodetector design based on a bottlebrush-like structure comprising Co3O4/ZnO/ZnO heterojunction, showcasing significant advancements in detection performance. The fabricated photodetector demonstrates a rational band structure, leading to enhanced light absorption efficiency and reduced electron-hole recombination. Notably, it exhibits highly efficient detection capabilities across the ultraviolet-visible-near infrared (UV-vis-NIR) region under zero-bias conduction. By incorporating an intermediate layer of ZnCo2O4, we further enhance the photodetection performance without compromising material morphology. Density functional theory (DFT) analysis elucidates the electronic structure at different heterojunction interfaces, providing insights into electron transitions and their impact on photodetection mechanisms. The combination of DFT results with optical absorption data reveals the underlying principles governing the superior performance of the Co3O4/ZnCo2O4/ZnO heterojunction. Our findings demonstrate remarkable metrics for photodetection, with a maximum achievable responsivity (R) of 119.99 mA/W and a specific detectivity (D) of 2.19 x 10(13) Jones. These results highlight a promising strategy for developing broadband photodetectors based on stable, nontoxic, and cost-effective metal oxides, paving the way for significant advancements in photodetection technology.

Constructing high-quality interfaces is critical for improving carrier separation efficiency in heterojunctions. Herein, the WO3/CuWO4/CuO ternary heterojunction films was constructed on FTO substrates for the first time through in-situ technique as an effective photoanode for photoelectrochemical hydrogen production. The CuO nanoparticles loaded WO3 nanorod with buffer layer CuWO4 significantly increased the absorption capability of visible light, accelerate charge separation and enhanced photoelectrochemical performance. The photocurrent density of WO3/CuWO4/CuO heterojunction photoelectrode achieved 2.24 mA∙cm-2 at 1.23 V vs. RHE, which is nearly 5.6 times higher than bare WO3 photoanode. In addition, the onset potential of WO3/CuWO4/CuO heterojunction shifted negatively by 110 mV compared to WO3. This work indicates that designing high-quality interface heterojunction photoanodes via an atomic shared is an effective strategy for achieve effective photoelectrochemical performance.

Constructing high -quality interfaces is critical for improving carrier separation efficiency in heterojunctions. Herein, the WO 3 /CuWO 4 /CuO ternary heterojunction films was constructed on FTO substrates for the first time through in -situ technique as an effective photoanode for photoelectrochemical hydrogen production. The CuO nanoparticles loaded WO 3 nanorod with buffer layer CuWO 4 significantly increased the absorption capability of visible light, accelerate charge separation and enhanced photoelectrochemical performance. The photocurrent density of WO 3 /CuWO 4 /CuO heterojunction photoelectrode achieved 2.24 mA center dot cm -2 at 1.23 V vs. RHE, which is nearly 5.6 times higher than bare WO 3 photoanode. In addition, the onset potential of WO 3 /CuWO 4 /CuO heterojunction shifted negatively by 110 mV compared to WO 3 . This work indicates that designing high -quality interface heterojunction photoanodes via an atomic shared is an effective strategy for achieve effective photoelectrochemical performance.

A template-based solvothermal method was successfully developed for the controlled synthesis of two-dimensional (2D) monoclinic WO3 nanoplate/nanosheet arrays and three-dimensional (3D) hexagonal WO(3 )nanosphere/nanocage structures with single crystal petals. The structure-directing agents played an important role in controlling the morphology and phase of WO3 samples. The results showed that the WO3 nanospheres exhibited the highest visible light absorption capacity and a photocurrent density of 0.37 mA cm(-2) at 1.23 V vs. RHE under simulated sunlight. Moreover, the photocatalytic dye results displayed 83.2% methylene blue degradation and 87.9% rhodamine B degradation within 120 min under visible light irradiation. The high performance of the WO3 nanospheres, resulted from the hierarchical structure, increased surface area and enhanced light absorption, which improved the photogenerated charge carrier transfer and separation capability.

In today's field of optoelectronic devices, high-performance, self-power broadband responsive photodetectors hold significant application prospects and can find wide-ranging utility in areas such as optical communication, biomedical imaging, and environmental monitoring. This study investigates a series of samples with varying graphene oxide (GO) content, obtained through detailed characterization and optoelectronic performance testing. An appropriate amount of GO modification can form a thin film covering the brush-like C o 3 O 4/Z n C o 2 O 4/Z n O heterojunction surface, creating a conductive network. However, excessive content leads to GO aggregation on the heterojunction surface, affecting detection performance. Density functional theory (DFT) calculations elucidate the electron structure and transport mechanism at the interface between ZnO and GO, demonstrating graphene oxide's efficacy as an electron transfer channel, thus enhancing the material's optoelectronic detection performance. By employing the most suitable amount of GO modification, the optoelectronic detection performance of the C o 3 O 4/Z n C o 2 O 4/Z n O heterojunction is further improved. The maximum responsivity and detectivity under monochromatic light reach 193.33 mA/W and 3.68×1013 Jones, respectively. This work provides significant insights for the design and manufacturing of optoelectronic devices, with crucial scientific significance and practical value.

Self-powered broadband photodetectors operating in theultraviolet-visiblewindow are essential for optical communication, military monitoring,multispectral detection, and environmental monitoring. In this study,a new bottlebrush nanostructure based on the Co3O4-ZnO PN junction is fabricated as an efficient broadband photodetectorcapable of operation under zero bias conditions. This photodetectorhas a reasonable band structure, exhibits improved efficiency of lightabsorption, and features reduced electron-hole recombination.Moreover, the device exhibits highly efficient detection performancein the UV-visible region. The responsivity (R), specific detectivity (D), and response speedof the device were 22.7 mA W-1, 3.14 x 10(12) Jones, and 20/90 ms, respectively. These results suggesta new strategy for fabricating broadband photodetectors based on stable,nontoxic, low-cost metal oxides.