Dynamic random access memory(DRAM)suffers from the bridge issue due to the WSix residue on gate sidewall,which is the bottleneck to enhancing the product's yield and reliability.Thus,the Si/W atomic ratio of WSix is optimized to 2.45 by using X-ray fluorescence(XRF)and scanning electron microscope(SEM).Analysis by transmission electron microscopy(TEM)and electronic testing shows that after 30 s rapid thermal annealing(RTA)at 1 000 ℃,the sheet resistance of WSi2.45 film is 12 Ω/cm2 and can be easily etched off.Electron beam scanning before the WSix film etching shows that about 84.7% of the surface particles and polymer residue can be effectively removed through a novel wet cleaning process by 15 min HF and 10 min sulfuric-peroxide mixture(SPM)with 300 W megasonic.With these integrated optimized processes,the yield loss due to the WSix residue on the 65 nm DRAM products can be reduced from the original 31.3% to 1.9%,which also serves as a good guideline for future advanced DRAM process development.