High-energy protons can generate secondary fragments in multilayer GaN high-electron-mobility transistors (HEMTs). Some of these fragments may enter the sensitive volume (SV) and produce localized high-LET energy deposition. However, the source layer of these fragments and the origin of the high-LET subset remain insufficiently quantified in device-relevant multilayer structures. In this work, a Geant4-based region-resolved analysis was performed for a D-mode Schottky-gate AlGaN/GaN HEMT under 100–1000 MeV proton irradiation. The gate, gate-drain gap, and drain regions were treated separately, and the mass number, atomic number, kinetic energy, first-step LET in the SV, and layer of origin were recorded for all secondary fragments crossing into the SV. The results show that the SiC substrate layer provides the largest share of the fragment supply to the SV in all regions over the full proton-energy range. Using 28 MeV cm2/mg as the nearest practical integer reference level above the reported upper-end LET of proton-induced recoil ions in GaN, the selected high-LET fragment entries are mainly linked to the Au layer in the gate stack. Although SiC contributes the largest number of fragments entering the SV, fragment entries with LET ≥ 28 MeV cm2/mg are concentrated in the gate region and become more frequent as the proton energy increases. These results identify local fragment-transport and first-step LET signatures in the adopted multilayer model, rather than direct device-level SEE responses or SEE cross sections.

To systematically evaluate the single-event-effect sensitivity and in-orbit reliability of aerospace-grade baseband processing SoC circuits, heavy-ion irradiation tests were performed on different accelerator platforms in accordance with the QJ 10005A-2018 standard to investigate single-event latch-up (SEL), single-event upset (SEU), and single-event functional interrupt (SEFI). Considering the high integration level and functional complexity of the SoC, a four-level test methodology, including design for testability (DFT), memory built-in self-test (MBIST), function-level testing, and typical application-level testing, was adopted for effect characterization, and the IRPP model was further used to evaluate in-orbit reliability in the GEO environment. The results show that the LET threshold of SEL for the SoC is no less than 79.24 MeV•cm2/mg, and the LET thresholds of SEU for flip-flops and memory cells are 15.9 MeV•cm2/mg and 16.8 MeV•cm2/mg respectively, both meeting the aerospace specifications. The on-orbit error rates of baseband processing function and typical application function are 2.20×10–5 per device per day and 7.90×10–7 per device per day, which are lower than the specified limits. All single-event effect indicators of the baseband processing SoC satisfy the requirements for aerospace applications, indicating a certain level of radiation tolerance under the tested conditions

This paper presents a radiation-resilient spine-inspired robotic arm actuated by shape-memory alloys (SMAs) to address environmental adaptability challenges in high-radiation nuclear environments such as power plants and decommissioning facilities. Forward- and inverse kinematics models are systematically established, followed by the development of a radiation-hardened control board utilizing field-programmable gate arrays (FPGAs) with multi-layer shielding to ensure operational reliability. To precisely regulate bending deformation, a predictive control algorithm integrating proportional-integral-derivative (PID) and radial basis function (RBF) neural networks calculates the optimal output voltage for heating SMA springs, achieving enhanced shape control accuracy. Furthermore, the robotic arm incorporates programmable variable-stiffness joints enabled by low-melting-point alloys, endowing it with shape-reconfiguration capabilities to adaptively perform tasks in unstructured spaces. Experimental validation confirmed the dexterous and compliant manipulation performance of the system, demonstrating its potential for critical applications, including maintenance, emergency response, and precision inspection within confined radioactive environments.

GaInP/GaAs/Ge triple-junction solar cells have been widely used in satellite applications. The existence of high energy protons in deep space exploration will inevitably degrade the performance of the solar cells. We have conducted irradiation experiments with proton energies of 80 MeV and 100 MeV, and found that after irradiation with 80 MeV and 100 MeV protons, short-circuit current (Isc) of the triple-junction cell remains essentially unchanged, while open-circuit voltage (Voc) degrades to 93

With the rapid advancement of electronic devices across numerous fields, the importance of radiation testing has become increasingly prominent. However, traditional methods for locating decapsulated chips primarily rely on manual operation, which suffer from significant issues such as low speed and limited accuracy. To address this, this paper proposes an automatic identification and localization algorithm for decapsulated chips based on multi-scale enhancement. The system consists of three core modules: image preprocessing, decapsulated chip detection, and coordinate transformation, enabling efficient automatic identification and precise localization of decapsulated chips. During training, a hybrid dataset comprising 3,786 images-formed by combining public and self-compiled datasets-was utilized. Compared to the baseline algorithm, the proposed method achieves a 2.4% improvement in Precision and a 2.1% improvement in Recall, with a particularly notable 43% increase in the recall rate for small objects. It also demonstrates certain performance advantages over other algorithms and traditional manual methods. This approach can be widely applied in various radiation testing scenarios, significantly reducing the preparation time required for localization before irradiation, thereby improving equipment utilization efficiency and providing efficient and accurate technical support for the radiation testing of electronic devices.

Proton beam therapy is widely regarded for its cost-effectiveness, precision, and protection of normal tissues. Emerging evidence shows that conventional radiotherapy can inhibit primary tumors and promote immunogenicity of distant tumors, possibly via damage-associated molecular patterns (DAMPs) like calreticulin (CRT) and high mobility group box 1 (HMGB1) released during immunogenic cell death (ICD). However, the role of proton beams in inducing DAMPs and enhancing immunogenicity remains unclear. This study aimed to investigate the effects of proton beam-induced DAMPs on the colonization of distal tumors. In this study, in vitro cell irradiation experiments were conducted to identify the optimal proton beam dose for enhancing DAMPs expression in mouse colon carcinoma Colon-26 cells. Based on the optimal proton dose determined in vitro, a tumor-bearing mouse model was employed to evaluate its efficacy in inhibiting distal tumor colonization. To explore the mechanisms behind the anti-tumor effects, shRNA targeting DAMPs-related immunogenic molecules was applied to assess the immune response. In vitro findings indicated high-dose proton irradiation markedly induces HMGB1 release yet exerts no significant effect on CRT membrane exposure. Following high-dose proton beam irradiation, tumor cells transfected with shRNA exhibited a significant reduction in CRT and HMGB1 expression compared with the con-shRNA-irradiated control group. In vivo experiments demonstrated that HMGB1 knockdown reduced distal-tumor rejection by 60%, whereas CRT knockdown reduced it by only 20%, indicating that HMGB1 release may dominate proton-induced ICD. Our research results indicated that high-dose proton irradiation trigger the rejection of distal tumor colonization through a signaling pathway that depends on HMGB1. This research advanced our understanding of proton beam therapy immunological mechanisms and offered insights for improving tumor treatment outcomes.

This paper constructs a multi-layer structural model of GaN HEMT based on Geant4 to simulate the distributions of mass number $A$, charge number $Z$, kinetic energy $E_k$, and linear energy transfer (LET) of secondary particles reaching the GaN sensitive layer after 10$\sim$500 MeV protons incident in the gate, source-gate gap, and drain regions. The results indicate that when 10$\sim$200 MeV protons are incident on the drain at angles of 0$^{\circ}\sim$60$^{\circ}$, the angular effect is smoothed out in the sensitive layer, with deviations in the average A and Z less than 10\% between angles. This is primarily due to the cumulative attenuation from multiple Coulomb scattering and energy loss in the overlying layers. Furthermore, vertical irradiations on the gate, source-gate gap, and drain regions with protons of different energies reveal that the gate is most sensitive to energy variations, with the proportion of high-LET($>$ 15 MeV~cm$^2$/mg) events increasing from 5\% to 15\%, representing  a 200\% increase in the 10$\sim$50 MeV range, attributed to the enhanced nuclear reaction yield by high-Z overlayers; the source-gate gap shows intermediate sensitivity with a change rate of 18\%; and the drain is the least sensitive, only obvious increase in high-LET interval. These quantitative patterns reveal the microscopic influences of overlayer materials and geometric structures on secondary particle transport, providing a physical basis for explaining threshold issues such as SEGR and SEB.

GaInP/GaAs/Ge triple-junction solar cells have served as primary satellite power sources for two decades owing to their high conversion efficiency. However, atmospheric neutrons and those generated by nuclear-powered spacecraft (e.g., in Mars exploration) induce displacement damage, degrading cell performance. Existing studies lack microscopic-scale mechanistic interpretations of neutron radiation damage. Here, we investigated the neutron irradiation damage behavior and the underlying mechanism through the combination of experiment and simulation. It is found that there is a larger degradation of electrical characteristics with the increase of neutron fluence and the displacement damage mainly occurs in GaAs middle cell. Utilizing the neutron irradiation defect model obtained by the joint Geant4 and TCAD simulation, the carrier concentration distribution shows a more severe degradation in GaAs middle cell. Moreover, according to the recombination rate distribution and energy band structure distribution, it is found that the defect mechanism may change under high neutron fluence.

It is widely recognized that the proton and neutron single-event effect (SEE) cross sections are nearly equal above 50 MeV. The purpose of this article is to explore whether this conclusion holds true for devices with high linear energy transfer (LET) thresholds, which is interesting and important. We predict the proton and neutron single-event latchup (SEL) cross sections of two static random access memories (SRAMs) with LET threshold greater than 15 MeV $\cdot $ cm2/mg in the 20 MeV to 10 GeV region. Their proton and neutron SEL cross sections are dominated by the p+W and n+W reactions, respectively. We find that the neutron SEL cross sections are much lower than the proton ones even at 1 GeV, which breaks the widely accepted conclusion. The difference between them has nothing to do with whether there is a Coulomb barrier between the incident particles and tungsten. The proton and neutron SEL cross sections are mainly contributed by the fission fragments from the fission reactions triggered by protons and neutrons in tungsten. Consequently, the W(p,f) and W(n,f) cross sections determine the trend of the proton and neutron SEL cross sections with energy and determine the difference between them. The difference between the W(p,f) and W(n,f) cross sections results from that between the fission probabilities of the composite nuclei Re and W. Our study on another SRAM indicates that the widely accepted conclusion holds true for devices with low-LET thresholds, whose proton and neutron SEE cross sections are dominated by the p+Si and n+Si reactions, respectively.

BACKGROUND AND PURPOSE:Although carbon-ion radiotherapy (CIRT) has led to good outcomes, controlling metastasis is still crucial for improving overall survival. This study aimed to evaluate the effectiveness of by two combinations, one of CIRT and anti-CTLA4 antibody, the other of CIRT and anti-PD-1 antibody, applied at different radiation doses for distal tumour and metastasis suppression. MATERIALS AND METHODS:Murine cancer cells (colon carcinoma Colon-26 cells for experiments and osteosarcoma LM8 cells for verification) were grafted into both sides of the hind legs of syngeneic mice. Right-side tumours were irradiated with 3 Gy or 10 Gy CIRT while the left-side tumours were not irradiated, followed by the administration of the anti-CTLA4 antibody or anti-PD-1 antibody. The diameter of the tumours in both legs was measured 3 times per week after irradiation. The number of pulmonary metastases was evaluated within 3 weeks after irradiation. RESULTS:Compared with the control group, the high-dose group showed promising anti-cancer benefits in terms of both irradiated tumours and lung metastasis, but neither 10 Gy CIRT combined with the anti-CTLA4 antibody nor 10 Gy CIRT combined with the anti-PD-1 antibody suppressed the growth of distant unirradiated tumours. In the low-dose group, the effect on primary tumour control was slightly weaker than that in the high-dose treatment group, but significant suppressive effects on both distant unirradiated tumours and metastases were observed following 3 Gy CIRT combined with anti-CTLA4 antibody treatment. Specifically, the volume of distant unirradiated tumours decreased by 40 % compared with that of the control group, and no lung metastasis was observed. CONCLUSION:Our findings suggest that there is an optimal dose range for the abscopal effect generated with the CIRT combined with anti-CTLA4 antibody, and it highlights a new opportunity for increased induction efficiency of the abscopal effect of combination therapy.

The primary objective of this research is to comprehensively investigate the equivalence of single-event effects (SEEs) in silicon carbide metal-oxide semiconductor field-effect transistors (SiC MOSFETs) that are induced by protons and heavy ions. The samples utilized in the experiments are the fourth-generation symmetric groove gate SiC MOSFETs. Proton irradiation experiments were meticulously executed at varying energies, namely 70 MeV, 100 MeV, and 200 MeV, while heavy-ion irradiation was carried out using 138 MeV Cl ions. During these experiments, the drain–source current (IDS) and drain–source voltage (VDS) were continuously and precisely monitored in real time. Experimental results demonstrate that single-event burnout (SEB) susceptibility correlates strongly with proton energy and applied drain–source bias. Notably, SiC MOSFETs exhibit a stronger tolerance to proton SEB compared to heavy-ion SEB. Proton irradiation results in a sudden elevation in IDS, whereas heavy-ion irradiation leads to a gradual increase. In summary, the mechanism underlying proton-induced SEE is intricately related to the ionization of secondary particles. Future research endeavors should place a greater emphasis on comprehensively considering proton effects to establish a more complete and effective evaluation system for SiC MOSFET SEEs.

A comparative study on the synergistic effect of the total ionizing dose and neutron single event effect on a SiC MOSFET and Si MOSFET was performed based on the 60Co γ source and the high-pressure multiplier 14 MeV neutron source at the China Institute of Atomic Energy. First, a γ-ray total ionizing dose experiment was performed on these two devices, and the differences in the total ionizing dose damage of the SiC and Si MOSFETs were analyzed. Then, neutron single event effect experiments were performed to investigate the effects of different doses on the single event effect for the devices. The results indicate that the unhardened SiC MOSFET has stronger resistance to the total ionizing dose compared with hardened Si MOSFET. During the 14 MeV neutron irradiation experiment, no single event burnout was observed in either device, but single event transients were observed. Even though the hardened Si MOSFETs are capable of suppressing single event transient currents at a higher drain bias, the trapped charge concentration of SiC MOSFETs due to irradiation is smaller than that of Si MOSFETs, which improves their resistance to the total ionizing dose and makes them less affected by the synergistic effect of the total ionizing dose and neutron single event effects. The research results can provide some guidelines for the radiation hardening technology of power devices used in aerospace and nuclear industries.

In the process of radiotherapy for cancer patients, there is an extremely low probability phenomenon that the distal tumor/metastasis away from the irradiation field undergoes regression after localized radiation therapy, which is called the abscopal effect. Enhancing the incidence of this phenomenon possesses profound significance for the investigation of metastatic cancer treatment. Currently, the underlying mechanisms of the abscopal effect remain unclear. Radiation-induced immunogenic cell death is considered one of the potential mechanisms for the abscopal effect. From this perspective, we explored how physical parameters and biological factors influence this process. Differences between patients with respect to physical factors and intrinsic biological factors that activate the immune response (acquired factors) may affect the induction of the abscopal effect.

Radiation effect of the device becomes more important with the development of aerospace due to them may change the state or even destroy the device.The major types of the radiation effect include single event effect(SEE),total ionizing dose(TID)and displacement damage(DD).SEE can be caused by ions incidence the sensitive region of the device and changes the potential of the electrode.TID can be caused by ions incidence at the material of the device and leads to the charge accumulate on the Si-SiO2 interface.In general,the SEE and TID often occur in random-access memory(RAM),and the DD often occur in image sensor.Therefore,the researching and esti-mating the risk of radiation effect on the device before use is necessary.Much study has been report during the last decades,but most of them focus on the single radiation effect.Recently,the synergistic effect becomes attention because the development of space nuclear power and it reflectes the real radiation environment of the device.In this paper,the static random access memory(SRAM)was used for research the synergistic effects by using the China Institute of Atomic Energy HI-13 Tandem Accelerator and the 60Co irradiation device.The SRAM was radiated by the gamma ray and then the different heavy ions.Yet it's worth noting that the sequential irradiation method is a common research method of synergistic effect.In the total ionizing dose experiment,different doses on the device were chosen,such as 300,500 and 750 krad(Si).Mean-while,the dose rate keeps the same on 90 krad(Si)/h.In the single event effect experi-ment,different ion energy on the device was chosen,such as 5.0,13.9,21.9 and 37.4 MeV·cm2/mg.The time interval between two different radiations keeps brief for decreasing the annealing effect.Single event upset of the device was measured by the self-developed testing system.A typical soft errors calculation method under the mixed beam environments was proposed.By using this method,the on-orbit soft errors of the device in the space nuclear power were calculated.Meanwhile,the uncertainty of the method was distinguished and calculated including the uncertainty of total dose,single event upset number,flux and the fitting process.Type A and B uncertainties were synthesised for the final uncertainty.Research result suggests the synergistic effects may reduce the soft errors compared to simple single event effect.

The space environment is a very harsh operating environment,and space radi-ation can directly affect the operation of electronic devices causing total ionizing dose(TID),single event effect(SEE)and displacement damage(DD).For most devices TID and SEE are the two most dominant effects,the study of TID and SEE mechanism is one of the main tasks in modern spacecraft design.Previous studies show that there is a synergistic effect between TID and SEE.The TID will significantly affect the sensitiv-ity of the SEE,and the effect rules and mechanisms are not consistent due to the different device process sizes and processes.There are few reports about the synergistic effect of SOI SRAM devices in the world,and the research on SOI SRAM with special memory cell structure has not been carried out.To further elucidate the synergistic effect between TID and SEE in SOI SRAM,an experimental study was conducted using a domestic 130 nm 7T SOI SRAM.The TID and SEE experiments were carried out at the China Institute of Atomic Energy TID test platform and HI-13 tandem accelerator SEE test platform.Before the SEE experiment,three groups of SOI SRAMs were irradiated by total dose of 300,500 and 750 krad,respectively,and finally the change of the single event upset(SEU)cross section of the SOI SRAM after different doses TID irradiation was obtained.The experimental result shows that the SEU cross section of the SOI SRAM decreases to 80.5％,66％and 50.5％at three LET values of 13.85,21.8,and 37.4 MeV·cm2/mg after TID irradiation.There is no obvious difference found in the SEU cross section under different writing modes,which means that the synergistic effect of these devices has no data-dependent.The saturation cross section of the device also shows a trend of decreasing with increasing dose,up to 19.5％,and no significant change in the SEU threshold was found in this study.By analyzing the SEU cross section of flip-flop type 1→0 flip-flop and 0→1 flip-flop,it is found that the delay efficiency of the delay transistor N5 is the main reason for the influence on the SEU cross section.After the mechanism analysis,it is concluded that the delay transistor N5 has an increased equivalent off-state resistance due to the decrease of carrier mobility caused by TID,and this phenomenon is the main reason for the decrease of SEU cross section.The anti-SEE performance of SOI SRAM with special mechanism will be enhanced gradually with longer in-orbit time,which provides new insight for future electronic devices radiation-hardend.

The exposure of spaceborne devices to high-energy charged particles in space results in the occurrence of both a total ionizing dose (TID) and the single-event effect (SEE). These phenomena present significant challenges for the reliable operation of spacecraft and satellites. The rapid advancement of semiconductor fabrication processes and the continuous reduction in device feature size have led to an increase in the significance of the synergistic effects of TID and SEE in static random access memory (SRAM). In order to elucidate the involved physical mechanisms, the synergistic effects of TID and single-event upset (SEU) in a new kind of 130 nm 7T silicon-on-insulator (SOI) SRAM were investigated by means of cobalt-60 gamma-ray and heavy ion irradiation experiments. The findings demonstrate that 7T SOI SRAM is capable of maintaining normal reading and writing functionality when subjected to TID irradiation at a total dose of up to 750 krad(Si). In general, the TID was observed to reduce the SEU cross-section of the 7T SOI SRAM. However, the extent of this reduction was influenced by the heavy ion LET value and the specific writing data pattern employed. Based on the available evidence, it can be proposed that TID preirradiation represents a promising avenue for enhancing the resilience of 7T SOI SRAMs to SEU.

Objective Benefitting from the development of semiconductor technology, complementary metal oxide semiconductor (CMOS) image sensors have been able to rival or even surpass charge-coupled devices (CCDs). With high integration, low power consumption, and strong radiation resistance, CMOS image sensors have become a mainstream imaging device in the fields of star tracking, remote sensing imaging, and astronomical observation, and play an important role in space missions. The large number of high-energy protons in the space radiation environment can cause radiation damage to CIS devices operating in orbit, leading to device performance degradation and even functional failure. Proton- induced radiation damage includes the total ionizing dose effect, displacement damage effect, and single event effect. The total ionization dose and displacement damage cause defects in the oxides, interface states, and bulk Si, resulting in permanent damage to the devices, which mainly produces the output signal of the transient disturbance, and the damage gradually recovers with time. Therefore, it is important to study the proton radiation effect of CIS to improve the reliability of CIS applications in space-irradiated environments. Proton irradiation experiments of CIS are conducted at different energies and fluences. The degradation of dark signal, non- uniformity of dark signal, random telegraph signal, and hot pixel is analyzed, and the influence of different defects on the degradation of device parameters is studied by simulation. These experiments and analysis will help designers improve the reliability of CIS applications in space radiation environments. Methods The irradiation experiment was carried out by using the 100 MeV proton cyclotron of China Institute of Atomic Energy, and the selected proton energy was 50 MeV and 90 MeV. The fluence is in the range of 6x1010.4.7x1011 cm- 2, All pins of the CIS are unbiased during irradiation. The CIS model used in this experiment is CMV4000 which the pixel size is 5.5 mu mx5.5 mu m and the total number of effective pixels is 2048x2048, It adopts a 8 T pixel structure. The CIS parameter test is carried out on the irradiation effect parameter measurement system of photoelectric image sensor based on European standard EMVA1288. The tests before and after irradiation were carried out at room temperature. In this study, The data gray images are extracted and processed by image analysis software, and the change rules of the dark signal distribution, dark signal spikes, and random telegraph signal are obtained. The changes of electron density and generation rate in space charge region after adding different defects are obtained by Technology Computer-Aided Design (TCAD) simulation. Results and Discussions In present study, experiments of 50 MeV and 90 MeV proton irradiation on CIS are carried out to analyze the experimental law of CIS performance degradation induced by proton irradiation. The increase in irradiation fluence results in rising dark signals, and dark signal spikes. Under the same displacement damage dose, the increase of average dark signal and the distribution trend of dark signal are consistent after proton irradiation with different energy (Figs. 2 and 3). However, 50 MeV proton irradiation will produce more dark signal spikes and greater dark signal nonuniformity. This is because the cross sections of inelastic collisions between different energiy proton and Si are different, resulting in different types of defects, and dark signal spikes are mainly caused by complex cluster defects (Figs. 4 and 5). Proton irradiation will produce two- level and multi- level RTS in CIS pixel, which is related to the density and type of bulk defects in the space charge region (Figs. 6 and 7). The simulation results show that different types of defects affect the carrier generation rate in the space charge region, deep level defects and cluster defects lead to higher carrier generation rate, and the increase of generation rate improves the dark signal, which in turn leads to DSNU and RTS phenomena between pixels (Figs. 9 and 10). Conclusions In this paper, proton irradiation experiments with different energy and fluence were carried out with commercial 8 T CIS, and the degradation laws of CIS dark signal, DSNU, hot pixel and RTS induced by proton irradiation were studied. The results show that the average dark signal increases significantly with the increase of displacement damage dose. Under the same displacement damage dose, the average dark signal increases uniformly after proton irradiation with different energy, but a different number of hot pixels are produced. This is mainly because the cross section of nuclear interaction between protons and silicon with different energy is different, which produces different types of defects in pixel units, leading to the difference of dark signals between pixels and the phenomenon of DSNU and RTS between different pixels. Through TCAD simulation, it is confirmed that the point defect near the center of the band gap has higher carrier generation rate, the generation rate of cluster defect is also higher than that of simple point defect, and the increase of generation rate leads to the increase of dark signal. This study provides experimental data reference for the study of displacement damage mechanism of CIS protons with different energies, and more radiation experiments and simulations will be carried out in the future to further study the degradation law and damage mechanism of displacement damage sensitive parameters such as hot pixels and RTS after proton irradiation with different energies.

空间环境中存在大量的高能粒子,单个高能粒子穿过航天器壳体轰击到电子器件,引发器件逻辑状态翻转、功能异常等单粒子效应,进而影响航天器的可靠运行和任务达成.基于地面加速器辐照试验模拟空间单粒子效应是评估电子器件在空间应用时发生单粒子错误风险的重要手段,只有其抗单粒子效应的指标符合宇航应用要求的器件才能在航天器中使用.航天器面临的空间辐射粒子主要是重离子和质子,它们诱发的单粒子效应也最为显著.开展宇航器件单粒子效应地面模拟试验主要依托重离子加速器和质子加速器,为满足单粒子试验需求,需要研发大面积束流扩束及均匀化、高精度束流快速诊断等技术,以及满足大批量试验任务需求的高效试验终端,重点介绍中国原子能科学研究院的基于加速器的重离子单粒子效应模拟试验技术、质子单粒子效应模拟试验技术和用于器件辐射损伤敏感区识别的重离子微束技术,以及上述技术在宇航器件单粒子效应风险评估中的应用.