As a typical candidate in the field of next-generation optoelectronic display, micro-light-emitting diodes (Micro-LEDs) have drawn a great deal of attention for their unrivalled performance advantages, such as active luminescence, low-power consumption, wide color gamut, long lifetime, fast response speed, and so on. As an advanced display unit, Micro-LEDs conform to the development trend of the information era, and can meet the increasing demand for high-performance micro displays in the development of intelligent devices such as augmented reality (AR), virtual reality (VR) and naked eye 3D projection. However, there are still some obstacles in the process of commercialization of Micro-LEDs. In order to have a remarkable position in future display technology, the Micro-LEDs need to overcome problems related to overall performance of the device itself and high cost of manufacturing. In this review, focusing on the improvement methods for material growth, the optimized techniques for device preparation, and full-color realization strategies for full-color displays, the latest key technological breakthroughs and advanced solutions in these aspects are summarized, and the future development of Micro-LED displays is prospected.

Three alkylamine modifiers with different molecular sizes were incorporated to post-treat CsPbI3 films to systematically investigate the effect of alkyl chain length on device performance.

This review describes the development history of group-III nitride light-emitting diodes (LEDs) for over 30 years, which has achieved brilliant achievements and changed people′s lifestyles. The development process of group-III nitride LEDs is the sum of challenges and solutions constantly encountered with shrinking size. Therefore, this paper uses these challenges and solutions as clues for review. It begins with reviewing the development of group-III nitride materials and substrates. On this basis, some key technological breakthroughs in the development of group-III nitride LEDs are reviewed, mainly including substrate pretreatment and p-type doping in material growth, the proposal of new device structures such as nano-LED and quantum dot (QD) LED, and the improvement in luminous efficiency, from the initial challenge of high-efficiency blue luminescence to current challenge of high-efficiency ultraviolet (UV) and red luminescence. Then, the development of micro-LEDs based on group-III nitride LEDs is reviewed in detail. As a new type of display device, micro-LED has drawn a great deal of attention and has become a research hotspot in the current international display area. Finally, based on micro-LEDs, the development trend of nano-LEDs is proposed, which is greener and energy-saving and is expected to become a new star in the future display field.

基于incoPat专利数据库,利用ITGInsight和UCINET 6.0等分析工具,依次对稀土功能材料领域的合作专利进行了总体态势、国家分布、我国的省/市分布分析.运用社会网络分析方法,分析了不同时间段(1985-1999年、2000-2010年、2011-2020年)稀土功能材料领域的合作网络的演化特征.研究表明,中国在国际专利合作网络中的地位正发生积极转变,但尚未处于网络的信息和知识流动的中心位置;省/市之间的协同性有所提高,但合作还有待加强;机构之间开展产学研合作、上中下游协同合作的空间还较大.最后,基于合作网络的演进分析结果,从加强顶层设计、强化资源统筹整合、集成培育突破性产品、加强国际合作等方面提出了推动稀土功能材料产业发展的相关建议.

[Purpose/Significance] This paper researched the subject scientific data management services of special libraries, analyzed the demand side and supply side of scientific data management services, and explored the subject service system and service model of special libraries for scientific data management. [Method/Process] This paper researched the demand environment and demand subjects of scientific data management services, as well as the trend and service contents of subject scientific data management services in special libraries. Then, based on the scientific data lifecycle, this paper constructed a supply and demand matching butterfly system for scientific data management services, and finally proposed a target-centric subject scientific data management service model of special libraries. [Result/Conclusion] The paper constructed a subject scientific data management service system from the perspective of supply and demand matching, and introducted the target-centric theory to explore the scientific data management service model, aiming to strengthen the collaboration between the demand sides and supply sides of scientific data management, and enhance the service capacity and effectiveness of subject scientific data management services in special libraries.

A challenging development of an AlGaN-based solar-blind UV heterojunction bipolar phototransistor with a gain-type NPN structure.

This article reports the development of hybrid AlGaN-based self-powered solar-blind ultraviolet (UV) focal plane array (FPA) imaging photosensors from material growth and array preparation to functional verification. The detailed process starts with the epitaxial growth by metal-organic chemical vapor deposition (MOCVD). A high-quality AlN template is obtained on the 2-in double-polished ${c}$ -plane sapphire substrate by introducing a mesothermal AlN (MT-AlN) interlayer and adjusting the growth rate of the high-temperature AlN epilayer (HT-AlN). Then, a polarization-enhanced p-i-n structure photodetector material is grown on the AlN template. Subsequently, based on the p-i-n structural material, a $320\times256$ back-illuminated solar-blind photodiode array is fabricated and hybridized to a matching Si-based CMOS readout integrated circuit (ROIC) chip to form a focal plane detector. Solar-blind UV detection is observed throughout the array in the 262–281-nm spectral region with a peak external quantum efficiency (EQE) of 65.3% at zero-bias voltage (no antireflection coating) and a nanosecond transient response time at a reverse bias of 5 V. The visible response of the ROIC is eliminated by developing a masking technology that is opaque to visible light, which enables the focal plane detector to achieve a high UV/visible rejection ratio of more than $10^{{4}}$ .

From the five dimensions of innovation resource input, innovation output, industrial correlation and structure, science and technology transformation ability, and innovation environment support, an evaluation system containing 34 end indicators is screened and constructed. Taking the index data of China’s laser industry in 2019as samples, using the AHP entropy weight method model, this paper evaluates the innovation ability of the laser industry chain in east China, south China, north China, central China, southwest, northwest and northeast China.The innovation ability of China’s laser industry chain is strong in the east and weak in the west, strong in the south and weak in the north. The innovation ability of laser industry chain in east China and south China is strong; though central China has a good policy environment support, the input of innovation resources and the output of innovation achievements still need to be strengthened; The overall concentration in north China is low; The innovation ability of laser industry chain in northeast, northwest and southwest regions is weak.

The filterless narrowband photodetector is emergent in the field of optoelectric detection due to its spectral discrimination and avoiding interference from other bands. Distinguished from the presently developing strategy based on organic semiconductors, a strategy based on bandpass response behavior by constructing two kinds of group-III nitride semiconductors with different bandgap is proposed. Through functional verification of the prototype device, the results show that high performance filterless narrowband photodetector can be obtained by this strategy. Moreover, the full-width at half maximum and the response band of the bandpass response behavior can be adjusted by manipulating the alloy components.

1 磁敏材料概况 1.1 概念 磁性敏感材料,简称"磁敏材料",是一类磁性材料的统称,也是敏感材料的类型之一.敏感材料是指可以感知电、光、声、力、磁、热等待测量的微小变化而表现出性能明显改变的材料.顾名思义,磁敏材料则是对磁场敏感的材料,即:能够将磁信号转换成其他形式能量(电信号)的敏感材料.根据这一特性,磁敏材料广泛应用于生物医疗检测、空间定位、电力检测等领域.磁敏材料一般包括磁电阻材料、多铁性材料、软磁材料等多种磁性材料[1].而本文将主要针对磁电阻材料、多铁性材料和软磁材料这3种磁敏材料在国外的研究与应用进展进行阐述.

以Excel软件为主要工具,将项目融资及投产运营相结合,运用现金流量表的编制方法,对建设投资成本、销售收入、成本费用、税金及附加、净现值/累计现金流等主要财务指标的计算方法以及评价标准进行了调查与分析.以广东省某微藻项目的实际数据进行检验,得到该项目基本具备财务可行性,但存在资金回收周期过长的问题.文章指出项目投资全过程财务评价能较为直观地展示项目财务评价的流程及评价结果,但也存在—定的局限性.

The zinc diffusion technique has been developed as an efficient way to realize the p-type InP material for planar InP-based optoelectronic devices. Herein, Zn3P2-related zinc diffusion is carried out on semi-insulated InP substrates by rapid thermal annealing using a zinc film as the encapsulation. The effect of the zinc encapsulation on the p-type diffusion in InP has been investigated in detail. The effect includes both positive and negative aspects, and the related formation mechanism is also clarified.

In this work, a planar In0.53Ga0.47As/InP avalanche photodiode (APD) working in both front- and back-illumination modes is fabricated for a comparative study. The great differences in the electrical and spectral performances between the two operating approaches can be originated from the PIN junction in the InP cap layer with high electric field, which plays the role of short-wavelength photoelectric conversion before the InP multiplication layer punches through under front-illumination.

Herein, an alternative approach of selective‐area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p‐type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective‐area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near‐infrared back‐illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high‐performance planar InGaAs/InP APD focal plane arrays.

复合材料的定义是,物理或化学性质明显不同的2种或2种以上的材料,以协同作用的方式结合在一起,但由于它们没有完全融合或溶解在一起,因此在某种程度上每种材料的化学性质保留完整.因为材料之间保持独立和不同,复合材料的综合性能优于原组成材料,这类材料的特性包括:良好的耐腐蚀性、良好的力学性能、长期耐用性、轻量化、高强度和高冲击强度等.

气凝胶是世界上密度最小的固体,密度仅为3.55kg/m3,也被称为"固态的烟",具有膨胀作用、离浆作用等,还具有高比表面积、绝热等特征.气凝胶材料在20世纪30年代由美国塞缪尔·基斯勒(Samuel Kistler)教授采用超临界干燥方法制备而成.气凝胶自身的结构和性能使其具有重要的应用价值,广泛应用于服饰、建筑、环保等众多领域.本文对国外气凝胶材料的制备工艺和应用进展进行介绍.

随着中部崛起战略的实施,中部地区已成为国家崛起的重要战略支撑点,中国科学院作为区域创新发展的重要引擎,有效提升中国科学院在中部地区的科技成果转化能力,显得尤为重要.本研究从省份分布、时间趋势、转让人、受让人、技术领域、省际转让等多个维度,对中国科学院在中部地区的专利转让情况进行了分析.研究发现,河南省和江西省转让专利较少,中部地区研究所之间分化较大,受让企业集中于环境、能源和新材料领域,转让专利技术领域与各省重点产业高度契合,北上广转出到中部的专利较多.最后,基于统计分析结果,提出了中国科学院在中部地区科技成果转化的相关建议.

摩擦材料是汽车、飞机等运动机械设备中起到制动、传动、转向等功能作用的关键性功能材料.摩擦材料的相关研究主要集中在摩擦材料的材料成分设计上,制动摩擦材料主要组成部分有增强纤维、填料、有机粘合剂.按照摩擦材料的产品材质可以把摩擦材料分为石棉摩擦材料和非石棉摩擦材料.石棉摩擦材料因其对人体健康的不利影响,逐渐被非石棉摩擦材料取代.本文主要介绍了几种非石棉摩擦材料的国外研究进展及相关产品的开发和市场现状.

Herein, a metal-semiconductor-metal (MSM) structure dual-band solar-blind ultraviolet (UV) photodetector based on 60.5-period Al0.5Ga0.5N/AlN superlattices (SLs) is reported. The device exhibits distinct dominant responses in the solar-blind UV region with dual peaks located at 266 nm and 243 nm. The formation of dual-band solar-blind UV photodetection is clarified, which can be originated from the reflection enhancement property of the highly periodic Al0.5Ga0.5N/AlN SLs that restrains the light absorption around 259 nm resulting in weak spectral response in this specific waveband. (C) 2021 Elsevier B.V. All rights reserved.

半导体材料是对导电性介于电介质和导体材料导电性能之间的材料概括[1].由于半导体材料的性能优势及产业带动作用,其发展异常迅猛,至今已更迭至第3代.第1代半导体材料诞生于20世纪50年代,主要是指以硅(Si)、锗(Ge)元素为代表的半导体材料,是一切逻辑器件的基础,主要用于各类分立器件,并且在极为普遍应用的集成电路、电子信息网络工程、电子产品、航空航天、各类军事工程和迅速发展的新能源、硅光伏产业中都得到了极为广泛的应用.