The excitation function of the 238U(9Be, 5n) reaction was obtained for the first time. By using a stack of uranium targets, 20 experimental data were obtained by the on-line irradiation without changing beam energy. Taking the advantage of the long lifetime andαdecay mode of the residue nucleus 242Cm, the off-line measurement of theαradioactive was performed to obtain its yields. The maximum cross section is about 1 mb. The curve's shape and the maximum's position agree with the present model. The value of the cross section will help us to develop the ralated models, and push the nuclear studies in the transuranium region.

The excitation function of the U(Be, 5n) reaction was obtained for the first time. By using a stack of uranium targets, 20 experimental data were obtained by the on-line irradiation without changing beam energy. Taking the advantage of the long lifetime and α decay mode of the residue nucleus Cm, the off-line measurement of the α radioactive was performed to obtain its yields. The maximum cross section is about 1 mb. The curve’s shape and the maximum’s position agree with the present model. The value of the cross section will help us to develop the ralated models, and push the nuclear studies in the transuranium region.

A prototype autostereoscopic three-dimensional (3D) light-emitting diode (LED) display using a cylindrical diffractive optical elements (C-DOEs) sheet as the optical steering element is proposed. The operation of the system and the calculation method of the system parameters are described in detail. The DOEs sheet is placed from a distance from the LED display panel which is five times smaller of the existing technology, and the column spacings of the pixels of the LED display panel are nonequal in order to equalize the distance between the viewing zones. The prototype has a 1.33 m 2 display panel, 384 ×144 resolution and a horizontal field of view of 60°. The experimental result shows that the proposed method is a potential autostereoscopic technology for the large area LED displays.

通过微电子机械技术（MEMS）在抛光的熔融石英基材表面制作了平面精度达到0.4μm的超大单片面积的全息透镜。采用了分辨率达到0.2μm的步进投影式拼接光刻,适合石英基材的专用等离子耦合刻蚀（ICP）干法刻蚀技术,特殊的物理清洗方法,以及相关的多项辅助工艺。透镜理想面形横截面曲线为分段抛物线,每一片由23个柱状结构单元周期横向排列构成,采用等深度不等宽度的4台阶结构拟合,单元宽度约为2.966mm。在4in（10.16cm）圆片上,获得了单片尺寸为68mm×68mm的方形透镜。采用接触式台阶仪,扫描电子显微镜（SEM）,高倍光学显微镜等方法进行不同阶段检测。结果显示:台阶平面精度为0.4μm,垂直精度为30nm,有非常好的立墙陡直度和刻蚀均匀性。此工艺方案可实现小规模批量生产,成本适中,可以直接用于制作6in（15.24cm）以上同等级要求的石英透镜,经适当改进也可用于蓝宝石等基底材料的制作。

In this paper,the performances as well as the production procedure of the charged-particle telescope systems consisting of Si(Au) surface barrier detector and Si(Li) detector with different thicknesses were introduced briefly.As an example,the density distributions of the protons and electrons in space detected by the telescope systems mounted on the Fengyun-3 satellite(FY-3A) were also presented.

The testing of a doubled-sided multi-strip silicon detector manufactured by Institute of Modern Physics of CAS and Peking University were introduced.The electrical characteristics and energy resolution,two-dimensional spectrum,crosstalk were presented.The reverse leak current of each strip is smaller than 10 nA under bias voltage of 25 V.The energy resolution of strips on the front side is about 1.5%,but a little worse for the backside strips,about 3%.The level of crosstalk is about 6% for the front side,1% for the backside.Same tests were carried out on the commercial Micron BB1 detector and a comparison was presented.

Silicon micro-strip detectors are fabricated by a micro-electronic process. Their performance will become worse, even failure when they suffer from various contaminations. Moreover, the naked bond wires are also easily disabled by external forces. The research for above mentioned events is available to repair and maintain these detectors, and to improve their performance. This paper analyses the detectors' structure and fabrication process, and cleans them in different conditions according to the characters of contamination. After a measurement, it repairs them based on the chip graphics, packaging means and the electronics demand. Finally, the α isotope energy spectrum is used to measure the repaired detectors. A repaired detector shows that when the N-side is earthed and the P-side is biased negative 170 V, the detector is depleted and its average leakage current is 2.94 μA. By bonding again, the ghost peaks in the energy spectra caused by the strips whose bond wire is invalid on the other side are eliminated. The results also indicate that most disabled detectors can be revived by reasonable cleaning and repairing, but the cleaning might damage the surface or structure of the detector, so it must be careful and not frequently. Furthermore, when a bond wire is invalid, the electric charge could not be led out, so they are accumulated and influence other sensitive region by charge effect. It points out that the detector should be stored a place in cleaning, thermostatic and low-humidity conditions and without light and strong electromagnetic waves. these methods would be beneficial to improving their energy resolution, position resolution, stability and working life.

The configuration and performance of high voltage generator(HVG) of a high power low-energy electron accelerator, designed for industrial applications, were introduced in this paper.The simulating circuit model parameters of the HVG were determined based on its basic transformer-type working principle, and then the Matlab software was used to simulate steady work condition of the HVG.Furthermore, the instant voltage distribution along the cascades of the HVG was analyzed under the malfunction of breakdown between the high voltage electrode and the ground electrode.After that, the parameters of HVG were partly adjusted according to the simulating result, and performance of the equipment was improved as a result of the adjustment.In addition, the interlayer breakdown between the sections of cascades was simulated by Matlab, and some improving methods were adopted to enhance the performance of HVG for protecting the equipment during the high voltage breakdown.

Optical microscopic detection is very important in the process of semiconductor particle detector development.A system of digital-image optical microscope has been constructed with rather low price,which performance is comparable with the moderate-level imports.The system mounts powerful dry objective,and a 2μm resolution could be achieved.Observations with bright and dark field,polarized light,and interference light can be carried out on it.The system have large area on-line monitor,and the photographic device can be controlled by PC.It can be used in the control of defects and contaminations,pattern test,identification of crystal backing,inspection of the smoothness and the flatness of the crystal surface.It can also be used in some precise procedures,such as test,assembly,packaging and repairing.The quality of the bond could be examined by observing the appearance of the bond point and the microscopic structure of the solder.The surface fluctuation can be precisely measured under the microscope with the technology of multi-beam interference.In the article,the application of this system for semiconductor particle detector development has been illustrated,and the construction information has been described in detail.