利用溶胶-凝胶法在MgO(001)衬底上获得C轴择优取向的铁电铌酸锶钡(SBN)薄膜,主要介绍MgO(001)衬底上SBN60薄膜及掺入的K离子与Nb离子摩尔比例为1:3的SBN60薄膜横向电光系数r51的测量,实验测得不掺K的SBN60薄膜r51值为37.6 pm/V,掺K的r51值为58.5 pm/V.并由此设计一种基于MgO(001)衬底上的马赫-曾德尔型SBN60薄膜波导调制器,计算出在633 nm时,掺K比例为1:3的此种波导调制器半波调制电压值为10 V,不掺K的半波电压值为16 V,结果说明掺入K离子能增加薄膜的横向电光系数并有效的减少波导的半波调制电压.

The precursor solution of MgO was prepared by a simple method and highly (111) orientated MgO thin films were successfully deposited on Si (100) and Si (111) substrates using the Sol-Gel process. The relationship of the microstructure of MgO films and the substrate orientation properties, the annealing temperatures, the thickness of the films were investigated with X-ray diffraction pattern, X-ray rocking curve and atomic force microscope figure. The results showed that the (111) orientated crystallization of MgO films occurred above 500℃, regardless of the substrate orientation. The preferred (111) orientation of MgO films became better with the increase of the annealing temperature or thickness of the film. The oxidation of Si surface during the pyrolysis and crystallization of Mg alkoxide is suggested to account for the preferred (111) orientated MgO films on Si (100) and Si (111) substrates.

High-quality z-axis oriented SBN60 thin films on MgO(001) substrates have been grown by sol-gel process, The transverse electro-optic coefficients r_(51) of the SBN60 and potassium ion doped SBN60 thin films were measured respectively. M-Z type waveguide modulators made of SBN60 thin films were designed. The half-wave modulation voltage was demonstrated to be decreased with the K ion doping.

采用溶胶-凝胶法在Si(100)基片上制备出择优取向的MgO薄膜,随后在其上生长出具有择优取向的铌酸锶钡铁电薄膜.实验发现,MgO缓冲层的应用可以大大提高SBN薄膜的择优取向性能.同时,用五层对称理想波导耦合模理论,以SBN为波导层,分析了波导损耗与厚度的关系.通过对计算出的理想结果与实际相结合,以及对SBN在生长过程工艺与损耗关系的研究,制备出高质量、低损耗的SBN薄膜,为其在电光波导调制器等微系统中的应用打下良好的基础.