A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrödinger and Poisson equations and a system of hydrodynamic equations. It is shown that, when an electron enters the region of a strong field, the donor–acceptor doping increases the average drift velocity of electrons several times in the inverted heterostructures and by a factor of 1.5 in the transistor heterostructures based on the double-sided doped In x Ga 1 – x As–Al y Ga 1 – y As and In x Ga 1 – x As–In y Al 1 – y As heterojunctions. In this case, the surface density of electrons in the double-sided doped structures can be more than doubled without a noticeable deterioration of the transport characteristics.

AbstractA simple phenomenological model for estimating the upsurge in drift velocity of electrons in transistor heterostructures is proposed. This model is based on a self-consistent solution of Schrödinger and Poisson equations and the hydrodynamic system of equations of energy and momentum conservation. It is demonstrated that the conditions in the layer channel of DA-pHEMT structures with additional potential barriers, which are produced by donor–acceptor doping and enhance the localization of hot electrons, are even more conducive to reducing the time of flight of electrons under the gate than those established in heterostructures with deeper quantum wells produced by increasing the conduction band offset at the heterojunction interface.

A simple phenomenological model for estimating the upsurge in drift velocity of electrons in transistor heterostructures is proposed. This model is based on a self-consistent solution of Schrödinger and Poisson equations and the hydrodynamic system of equations of energy and momentum conservation. It is demonstrated that the conditions in the layer channel of DA-pHEMT structures with additional potential barriers, which are produced by donor–acceptor doping and enhance the localization of hot electrons, are even more conducive to reducing the time of flight of electrons under the gate than those established in heterostructures with deeper quantum wells produced by increasing the conduction band offset at the heterojunction interface.

Предложена модификация обращенной гетероструктуры путем встраивания в структуру легированного акцепторами слоя, формирующего дополнительный потенциальный барьер, уменьшающий поперечный пространственный перенос горячих электронов в подложку. Согласно проведенным расчетам, такая структура имеет разность энергий между уровнями размерного квантования, в несколько раз превышающую энергию оптического фонона в GaAs, и повышенную линейность передаточной характеристики. DOI: 10.21883/PJTF.2017.12.44707.16718

We propose a backward-diode heterostructure modified by a built-in acceptor-doped layer that forms an additional potential barrier decreasing the transverse transport of hot electrons to the substrate. According to calculations, this structure is characterized by (i) an energy difference between dimensional quantization levels that is several times the optical phonon energy in GaAs and (ii) increased linearity of transfer characteristics.