Катастрофічні втрати природних екосистем і шкода, завдана довкіллю від широкомасштабної російсько-української війни, спричинює непрогнозовані наслідки для кліматичної системи планети. Найбільші кліматичні ризики та екологічні загрози зазнала територія України, і вони очікувано зростуть у період післявоєнного відновлення та реконструкції. Різні галузі економіки потребуватимуть фахівців, здатних вирішувати реальні проблеми у сфері охорони і захисту довкілля на засадах «зеленого» майбутнього та сталого економічного розвитку. Метою статті є пошук шляхів трансформації освітнього складника підготовки кваліфікованих кадрів для довкіллєвої сфери шляхом розроблення і реалізації методичного контенту та впровадження змістового навантаження дисципліни «Протидія змінам клімату». Методологія дослідження базується на системному підході до формування фахових освітніх компетентностей еколога відповідно до визначених кліматичних цілей України в сучасних реаліях. Наукова новизна роботи полягає у тому, що вперше науково і методологічно обґрунтовано необхідність формування освітніх компетентностей здобувачів освіти зі спеціальності «Екологія», що продиктовано актуальними змінами державного законодавства щодо визначення кліматичних ризиків та протидії змінам клімату. Проведено аналітичний огляд сучасної нормативно-правової бази щодо кліматичних зобов’язань України, освітніх і професійних стандартів підготовки еколога, здійснено аналіз компетентностей, трудових функцій і програмних результатів навчання, необхідних для підготовки фахівця-еколога, здатного вирішували реальні професійні проблеми в умовах невизначеності. Висновки. Запропоновано для підготовки екологів навчальну дисципліну «Протидія змінам клімату» як вибірковий освітній компонент освітньо-професійної програми «Екологія» для здобувачів вищої освіти освітнього рівня бакалавр освітньої програми «Екологія». Розроблено методичний контент, інструментарій та змістове навантаження дисципліни у фокусі проблеми – зміна клімату і досягнення кліматичних цілей України у період воєнного часу та післявоєнного відновлення; визначено тематику лекційних занять, розроблено практичні, індивідуальні завдання та запропоновано теми, винесені на самостійне опрацювання, у структурно-логічній послідовності, що забезпечує найбільш ефективне формування професійних компетентностей відповідно до запитів соціуму.

By means of the Scanning Photodielectric Spectroscopy (SPDS) method, the energy spectrum of charge carriers' localized states was acquired for Cd1-xZnx Te crystals (x = 0.08-0.15) grown from the melt. In the implementation of SPDS, an additional excitation of a crystal by non-monochromatic light was used for the first time, and the parameter 'spectral density of a section of the photodielectric effect diagram' was introduced. This parameter is closely related to the occupation of localized states of charge carriers. It is found that under additional photoexcitation, the energy spectrum of the localized states detectable by the SPDS method broadens. Determinate variations in the new parameter depending on the energy position of a localized state in the crystal bandgap were found and explained. (C) 2021 Elsevier B.V. All rights reserved.

The subject matter of study in the article is the optical, dielectric and photodielectric properties of ZnSe crystals containing macroscopic structural inhomogeneities. The goal of this work is to study large-scale inhomogeneities in ZnSe crystals, which is important for determining the suitability of their application in technology. The tasks to be solved are: in a crystalline ZnSe ingot of cylindrical shape in the optical range at perpendicular to the light flux orientation of the sample axis to detect macroscopic inhomogeneities and establish their relationship with the features of the dielectric properties of the local regions of the ZnSe ingot; to investigate the influence of nonmonochromatic light flux on the distribution of dielectric parameters along the axis of the ZnSe ingot containing areas of macroscopic inhomogeneities. The problems were solved by the following methods: the homogeneity of the zinc selenide ingot was studied by the polarization-optical photoelasticity method; the photometry method was used to study the intensity distribution of the light scattered by the sample perpendicular to its axis; the dielectric properties of a crystalline ZnSe ingot were investigated by the capacitive method. The following results were obtained. In ZnSe crystals regions of three types were found: isotropic, weakly anisotropic, and anisotropic. Sharp changes in the intensity of scattered light are observed in the region of large-scale optical inhomogeneity, and light scattering in this region occurs anisotropically. The angular dependences of C and tgδ at an electric field frequency of 1 kHz are obtained for the region of large-scale optical anisotropy. The changes in dielectric parameters under the action of nonmonochromatic light along the sample axis are measured. Conclusions. It was found that ZnSe crystals are characterized by large-scale inhomogeneities of the investigated properties. A close relationship is noted between the optical and electrophysical properties, which is probably due to the mutual influence of two-dimensional and point defects on the formation of a defect structure during the growth and further cooling of the crystal.

The effect of Bi doping and annealing in hydrogen on the optical and dielectric properties of CWO crystals is investigated. It has been found that transmission of crystals decreases significantly in the region of 300-900 nm under the influence of the annealing and doping. In the temperature range of 80-290 K, a significant increase in the intensity of TSC and TSL of CWO crystals doped with Bi has been found. At the same time, there is no clear correlation between the maxima of the TSC and TSL curves, as well as there is the simultaneous emission of the red and blue luminescence bands at the maxima of the TSL curves. Under the influence of annealing and doping with Bi, a significant change in the complex dielectric constant of the CWO samples has been found in a wide frequency range.

The subject matter of study in the article is the optical, dielectric and photodielectric properties of ZnSe crystals containing macroscopic structural inhomogeneities. The goal of this work is to study large-scale inhomogeneities in ZnSe crystals, which is important for determining the suitability of their application in technology. The tasks to be solved are: in a crystalline ZnSe ingot of cylindrical shape in the optical range at perpendicular to the light flux orientation of the sample axis to detect macroscopic inhomogeneities and establish their relationship with the features of the dielectric properties of the local regions of the ZnSe ingot; to investigate the influence of nonmonochromatic light flux on the distribution of dielectric parameters along the axis of the ZnSe ingot containing areas of macroscopic inhomogeneities. The problems were solved by the following methods: the homogeneity of the zinc selenide ingot was studied by the polarization-optical photoelasticity method; the photometry method was used to study the intensity distribution of the light scattered by the sample perpendicular to its axis; the dielectric properties of a crystalline ZnSe ingot were investigated by the capacitive method. The following results were obtained. In ZnSe crystals regions of three types were found: isotropic, weakly anisotropic, and anisotropic. Sharp changes in the intensity of scattered light are observed in the region of large-scale optical inhomogeneity, and light scattering in this region occurs anisotropically. The angular dependences of C and tgδ at an electric field frequency of 1 kHz are obtained for the region of large-scale optical anisotropy. The changes in dielectric parameters under the action of nonmonochromatic light along the sample axis are measured. Conclusions. It was found that ZnSe crystals are characterized by large-scale inhomogeneities of the investigated properties. A close relationship is noted between the optical and electrophysical properties, which is probably due to the mutual influence of two-dimensional and point defects on the formation of a defect structure during the growth and further cooling of the crystal.

The features of changes in the real and imaginary parts of the complex permittivity of the samples with CdZnTe crystallites in the frequency range 10–103 Hz of the electric field in the absence of exposure to electromagnetic radiation are obtained. It has been shown that composites without these crystals have a higher diffuse reflection coefficient. Under the influence of non-monochromatic light, an increase in the changes in the complex permittivity of the samples with increasing frequency of the measuring field was detected. Moreover, the changes are larger for the samples with the largest crystallite size. The low inertia of changes in the dielectric parameters of the samples under the influence of non-monochromatic illumination is established. Samples with ZnSe (Al) crystallites are characterized by significant changes in the complex permittivity under the influence of non-monochromatic illumination in the frequency range 103–104 Hz. Negative changes of this parameter are especially unusual. The peculiarities of the spectral dependences of the constituents \( \Delta\upvarepsilon_{\text{ef}}^{'} \) and \( \Delta\upvarepsilon_{\text{ef}}^{''} \) complex permittivity of the structures, measured at a light intensity of 10 mW/cm2, have been established. The changes in the magnitudes of the increments of the real and imaginary components of the complex permittivity under the action of X-Ray radiation with a dose rate of 200 mR/h at different frequencies of the electric field are investigated and their characteristic features are determined. An analysis of the results from the point of view of non-equilibrium electronic processes in semiconductors is presented.

Components of complex dielectric permittivity of semi-insulating Cd 1-x Zn x Te crystals had been measured in the dark and under photo excitation. Also we studied energy resolution of radiation detectors made from these crystals for 137 Cs quants. Present studies have been carried out taking into account using specimens from different regions of crystal ingot. It is ascertained that investigated values of dielectric permittivity correlate with energy resolution of detectors. Such correlation is explained with presence of electrically active defects generated during the growth in the crystal volume. It is suggested that excitation with white light influence on dielectric permittivity due to fast recombination centers.

Dielectric properties of Cd1-xZnxTe crystals made from different ingot regions were investigated in a low-frequency region. Wavelet analysis was used for take-off of regular component in dependence of both parts of dielectric permittivity from spatial coordinate. It is ascertained that dielectric response of crystals has a relaxational character. Regular changes of response characteristics in ingot growth direction were revealed. Such peculiarities of properties are explained with changes during growth process not only in ratio of solid solution basic components, but also of intrinsic structure defects, especially related with cadmium vacancies.