Several studies have shown that the increased expression of delta–like noncanonical Notch ligand 1 (DLK-1) is associated with more aggressive tumor characteristics in patients with glioblastoma. The aim of the study was to estimate the diagnostic and prognostic values of DLK-1 serum levels in glioblastoma patients. Material and Methods. The study included 39 patients with newly diagnosed glioblastoma. The DLK-1 level was evaluated in paired serum and cerebrospinal fluid samples in glioblastoma patients before starting chemoradiotherapy (CRT). All patients with glioblastoma received combined modality treatment. The DLK-1 level in blood serum was additionally assessed during follow-up visits. Results. The median levels of DLK-1 in paired CSF and serum samples before CRT were 1.17 ng/ml (95 % CI 0.78; 2.89) and 0.27 ng/ml (95 % CI 0.26; 0.29), respectively (p=0.006). The assessment of the DLK-1 serum level in glioblastoma patients didn’t show any significant differences related to the response to therapy. In patients with tumor progression after CRT, the median serum DLK-1 level before CRT was 0.43 ng/ml, and in patients with stable disease, the median serum level was 1.7 ng/ml (p=0.012). The DLK-1 serum levels were 1.60 ng/ml and 0.32 ng/ml in patients with favorable prognosis for progression–free survival and in patients with unfavorable prognosis, respectively (p=0.005). The median concentrations of DLK-1 in serum before starting CRT were 1.01 ng/ml and 0.32 ng/ml in patients with favorable prognosis of overall survival and in patients with unfavorable prognosis, respectively (p=0.04). The DLK-1 levels in 4 weeks after CRT were 1.53 ng/ml and 0.23 ng/ml in patients with favorable prognosis of overall survival and in patients with the unfavorable prognosis, respectively (p=0.04). Conclusion. The DLK-1 serum level in patients with glioblastoma cannot be used to diagnose disease progression. However, this marker is a prognostic factor for overall and progression-free survival, and allows identification of patients with favorable and unfavorable prognosis.

In the present paper we report upon the influence of heavy doping of thin Si layers with Sb on the carrier transport in the temperature range 2 < T < 300 K and magnetic field induction (B) up to 9 T. Temperature and magnetic field dependencies of the longitudinal (ρxx(T,B)/σxx(T,B)) and transversal Hall (ρxy(T,B)/σxy(T,B)) components of tensor resistivity/conductivity were measured in the samples prepared by epitaxial technology and containing Sb atoms with densities near the concentration of Mott transition 1.05×1024 ≤NSb ≤ 4.0×1024 m-3. The use of normal contributions to ρxx(T,B)/σxx(T,B) and ρxy(T,B)/σxy(T,B) made it possible to estimate the concentrations and mobilities of charge carriers (electrons) depending on Sb content NSb, concentrations of localized surface states (LSS) 1×1018 ≤NS ≤5.6×1019 m-2 and disorder parameter 1 ≤ kFl ≤ 60 of Si layers, where kF and l being the wave vector and the mean free path of electrons, respectively. It was found that the relative longitudinal MRxx(T,B) = Δρxx(T,B)/ρxx(T,0) and the transversal MRxу(T,B) = Δρxу(T,B)/ρxy(T,0) magnetoresistive effects were significantly dependent both on the type of samples (NSb below or beyond the Mott transition) and on the presence/absence of LSS in them (for locked samples with the lowest NS covered with undoped Si layer or unlocked samples with the highest NS, respectively). In unlocked (with a great content of LSS) semiconductor-type samples, the values of MRxx(T,B) and MRxу(T,B) were positive at all temperatures (which is mainly due to the Lorentzian motion of electrons in a magnetic field). In the locked semiconductor type sample and in the unlocked metal-like sample, MRxx(T,B) and MRxу(T,B) became negative either in the entire region 2 < T < 30 K (locked) or only below 7 K (unlocked) . In this case, the normal longitudinal component of the conductivity tensor in zero and non-zero magnetic field included contributions from quantum corrections to Drude carrier transport (interference and the effect of electron-electron interaction and spin-dependent contributions with times of wave functions phase breaking of electrons tφ of the order of 2 - 100 picoseconds and coherent lengths (Thouless lengths) of ~ 20 - 400 nm) and the anomalous one including different types of spin-dependent effects (due to spin-orbit and spin-spin interactions, as well as intrinsic or asymmetric skew scatterings of free electron spins on paramagnetic Sb ions).

Bound states in the continuum (BIC) have attracted a great deal of attention in all-dielectric nanophotonics due to their ability to provide spectral features with a very high-quality factor. By definition, BIC cannot be observed in the far field because of the symmetry mismatch with the modes propagating in free space. Despite this, in systems with slightly reduced symmetry, the condition for BIC is lifted, which gives rise to the high-quality resonant features in their optical response. In particular, in photonic crystal slabs, which support the BIC states, the symmetry reduction allows modification of light propagation, reflection, or emission. In this work, using the photonic crystal slabs with embedded Ge nanoislands, we have shown the ability to control their light emission features by symmetry breaking. It was demonstrated that such symmetry breaking due to a change in the basis vectors of the photonic crystal unit cell or a change in the unit cell internal structure could provide independent control knobs to alter the spectral position of photonic crystal modes, their dispersion, and degeneracy. The obtained results reveal additional ways to manage the light emission of active media in photonic crystal slabs.

Room temperature lateral p+-i-n+ light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+ and n+ contact regions made it possible to reduce the impurity activation temperature from 800 degrees C-1100 degrees C to 600 degrees C, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55 mu m can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55 mu m exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

The emission properties of ordered arrays of silicon disk-like resonators with embedded GeSi quantum dots are studied. It is shown that, depending on the distance between the resonators, the structures can exhibit the properties of isolated Mie resonators or photonic crystals characterized by the presence of a contribution from photonic crystal modes in the photoluminescence spectrum. The formation of photonic crystals based on the disk-like resonators makes it possible to significantly increase the luminescence response in the wavelength range of 1.2–1.6 μm, even at room temperature.

The purpose of the study was to evaluate the efficacy of neutron therapy (NT) for salivary gland cancer and recurrent breast cancer. Material and Methods. The study included 130 patients with salivary gland cancer and 125 patients with recurrent breast cancer. Fast neutron therapy using U-120 cyclotron was given to the patients of the study group. Patients of the control group received standard radiotherapy (external beam radiotherapy). Results. Among patients with salivary gland cancer, a recurrence rate was significantly lower in patients who received a postoperative course of NT compared to patients of the control group (21.1 vs 45 %, p<0.05). The five-year overall survival rates were 73.8 ± 9.5 % and 43.2 ± 9.4 % in the study group and the control group, respectively (p<0.05). The five-year disease-free survival rates were 65.6 ± 7.5 % and 34.8 ± 9.1 % in the study and control groups, respectively (p<0.05). In patients with recurrent breast cancer, a significant increase in the frequency of complete regression in the study group compared to the control group was observed (91.8 vs 51.3 %, p<0.05). Ten-year survival rates in patients with no evidence of re-recurrence were 77.4 ± 8.7 % and 44.7 ± 8.8 % in the study group and the control group, respectively (p<0.05). Conclusion. The study demonstrated efficacy of fast neutron therapy in patients with salivary gland cancer and recurrent breast cancer. Neutron therapy did not result in serious complications, improved survival of the patients and decreased the recurrence rate compared with standard radiotherapy.

The purpose of the study was to evaluate the effectiveness of treatment of patients with recurrent nasal cavity and paranasal sinus cancer using photodynamic diagnosis (PDD) and photodynamic therapy (FDT).Material and Methods. The study included 40 patients with locally advanced nasal cavity and paranasal sinus cancer, who were admitted to the clinics of the Cancer Research Institute of Tomsk National Research Medical Center with disease progression or recurrence. All patients were divided into the study group (n=20) and the control group (n=20). Patients in both groups received chemotherapy combined with radiotherapy, chemotherapy combined with surgery or a combination of chemotherapy, radiotherapy and surgery. Treatment of patients included intraoperative assessment of resection margin using a laser electron spectral analyzer LESA-01 BIOSPEC. The bed of the removed tumor was examined to detect residual tumor tissues. Photodynamic therapy of the bed of the removed tumor was then performed using Photoditazine at a dose of 1 mg/kg body weight. Radiotherapy at a dose of 300–350 J per feld was given using a Latus–T apparatus, the feld diameter ranged from 1 to 2 cm. The power density varied from 0.4 W/cm2 to 0.5 W/cm2.Results. Nonparametric tests revealed a statistically signifcant difference in disease-free survival: 3.10, p=0.001 by Gehan-Wilcoxon test and 3.03, p=0,002 by Log-Rank test. When assessing overall survival, there were 10 (50.0 %) completed cases in the control group, 4 (20.0 %) in the study group, and 10 (50.0 %) and 16 (80.0 %) censored cases, respectively. Gehan-Wilcoxon test – -2.02 p=0.04. Log-Rank test –2.10 p=0.04. The results of the study showed that according to any of the criteria, there were statistically signifcant differences in survival between the control and study groups.Conclusion. Inclusion of intraoperative PDD and PDT in the treatment algorithm for nasal cavity and paranasal sinus recurrent carcinomas signifcantly increases the disease-free and overall survival of patients.

Subject of study. This study investigated SiGe heterostructures with self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals. Aim of study. The aim of the study was to determine the dependence of the spectral and temporal characteristics of the radiation of structures with Ge(Si) islands in two-dimensional photonic crystals on the depth of the holes forming the photonic crystal. Additionally, the characteristic decay times of the luminescence of islands in photonic crystals and the main mechanisms influencing their dependence on the etching depth of the photonic-crystal holes were determined. Method. The studied structures were obtained using molecular-beam epitaxy, electron-beam lithography, and plasma-chemical etching. The optical properties of the obtained structures were analyzed using microphotoluminescence spectroscopy with high spectral (0.5 nm) and temporal (50 ps) resolution. Main results. The dependences of the intensity, spectral shape, and characteristic decay times of the photoluminescence of self-assembled Ge(Si) islands in two-dimensional photonic crystals with a hexagonal lattice on the etching depth of the photonic-crystal holes were determined. The characteristic decay time of the luminescence of islands in the photonic crystals at room temperature decreased from 9 ns for the initial structure without photonic crystals to 0.6 ns for the sample with holes etched to the full depth of the grown structure (335 nm). This decrease is associated with an increase in the nonradiative recombination of charge carriers at the hole boundaries. The optimal ratio of the hole depth to the thickness of the active region of the structure was determined. Using this optimal ratio led to a maximum increase in the luminescence intensity of the Ge(Si) islands in two-dimensional photonic crystals compared with that of planar structures without photonic crystals. Practical significance. The obtained results are important for the development of efficient light sources in the near-infrared range for silicon-based integrated optoelectronics. (c) 2025 Optica Publishing Group

The library provides a set of C++/Python functions for computing cross sections of ultraperipheral collisions of high energy particles under the equivalent photons approximation. Cross sections are represented through multiple integrals over the phase space. The integrals are calculated through recurrent application of algorithms for one dimensional integration. The paper contains an introduction to the theory of ultraperipheral collisions, discusses the library approach and provides a few examples of calculations.

Light-emitting transistors (LETs) represent the next step in the development of light-emitting diodes (LEDs), offering additional control over emission. In this work, the transport properties and spatial distribution of electroluminescence (EL) in the spectral range of 1.2-1.7 mu m were studied for lateral p(+)-i-n(+) LEDs based on silicon-on-insulator structures with self-assembled Ge(Si) islands embedded in photonic crystals. It is shown that due to the low mobility of holes and their effective trapping in the islands, the maximum EL yield is observed at the i/p(+) junction of the LED. It is demonstrated that the sign and magnitude of the bias voltage applied to the substrate (to the gate) have a significant influence on the transport and emission properties of the LEDs with Ge(Si) islands, turning them into LETs. In particular, applying a negative gate voltage shifts the position of the maximum emission region from the i/p(+) to the i/n(+ )junction of the LET, which is related to the formation of a hole conductivity channel near the buried oxide layer. The embedding of a specially designed photonic crystal in the i-region of the LET makes it possible to manage the spectral properties of the near-IR emission by changing the sign of the gate voltage. The results obtained may be useful for the future development of optoelectronic devices.

The article describes 366 samples of clothing (some of them attributable), collected in 2012-2016 from cultural layers of the 15th to middle 18th centuries at the Ust-Voikary hillfort site in the subarctic zone of Western Siberia. We provide technological characteristics: size, state of preservation, color, properties of threads and fi bers, interlacing system, technological errors, cut, and traces of repair. Both animal and plant fi bers are present, and plain and twill weaving are attested. Ethnographic and zoological data provide information on the textile technologies used by residents of the polar zone of Western Siberia, and allow us to compare them with those known from other sites. We conclude that types of textiles for clothing remained virtually the same from the 15th to the 18th centuries. Fabrics, mostly woolen, were imported

In this paper, the features of the formation of bulk InGaN layers with an indium content of 60

The emission properties of a single Si microdisk resonator with a deterministically embedded GeSi quantum dot (QD) stack have been investigated. The results demonstrate selective excitation of different modes of the resonator depending on the position of QDs. The photoluminescence (PL) spectrum changes dramatically depending on the location of the QDs in the resonator. For the central QD position, the excitation of low Q-factor Mie modes with high field concentration in the center of resonator results in the appearance of a broad PL band. When the stack of QDs is shifted from the center to the edge of the Si resonator, the quenching of this PL band is observed and narrow PL peaks corresponding to whispering gallery modes (WGMs) appear in the PL spectrum. It is found that resonator modes can be excited not only by QDs but also by the radiation of the wetting layer. It is shown that a GeSi island on the top of the QD stack, not covered by silicon, can play the role of a nanoantenna, redirecting radiation to the upper half-space, which is especially important for WGMs that usually radiate sideways.

В статье публикуется коллекция миниатюрной антропоморфной скульптуры, полученная в ходе работ 2012-2016 гг. на Усть-Войкарском городище (приполярная зона Западной Сибири). Памятник относится к археологическим объектам с мерзлым культурным слоем, обусловившим сохранность предметов из органических материалов. Подавляющее большинство скульптурок изготовлено из дерева, две — из листового металла, одна — из лимонитовой конкреции. Выделены четыре основные категории изображений: бюсты, головы, условно полные антропоморфные фигуры, личины на палочках. Большая часть скульптурных изображений выполнена в традиции обско-угорской иконографии, меньшую можно соотнести со скульптурой самодийского облика. На некоторых фигурах есть дополнительные элементы в виде рядов насечек и изображения ромба. По этнографическим данным, их наличие наделяло скульптуры сакральным статусом. Находки имеют четкий археолого-архитектурный и хронологический (по данным дендрохронологии) контекст. Основная часть предметов была обнаружена в культурных слоях начала XVI — начала второй трети XVIII в. Рассмотрена стилистика изображений, приведены аналогии. Проведен сравнительный анализ антропоморфных изображений с этнографическими данными XVIII — начала XX в. Связь большей части фигур с определенными жилищами, их небольшие размеры и иконография показывают, что все они относятся к культовой деревянной антропоморфной скульптуре и являются атрибутами домашних святилищ. Установлено, что изображения делятся на две основные категории: семейные духи-покровители и иттарма - временные вместилища душ умерших.

A technology was developed for activating ion-implanted dopants in silicon-on-insulator layers at a low annealing temperature (600°C) using the pre-amorphization technique of a silicon device layer. In the case of phosphorus implantation, silicon was amorphized directly by dopant ions. In the case of boron implantation for pre-amorphization, the layers were preliminary irradiated with argon or fluorine ions. Complex diagnostics of the implanted layers was carried out using secondary ion mass spectrometry, X-ray diffractometry, and small-angle X-ray reflectometry. The combination of methods made it possible to characterize the impurity distribution, the degree of silicon crystallinity, the layer thicknesses, and the interface widths in structures. The results of diagnostics of the structure and composition correlate well with calculations in the SRIM software package and the electrophysical characteristics of the layers after annealing. It was shown that the use of argon for pre-amorphization of silicon interfered with the recrystallization process and did not make it possible to achieve acceptable electrical characteristics of the doped layer. Amorphization with phosphorus and pre-amorphization with fluorine during boron implantation allowed obtaining the required values of the resistance of the doped layers after annealing at a temperature of 600°C. The use of a complex approach rendered it possible to optimize the modes of amorphization, ion doping, and annealing of silicon-on-insulator structures at low temperatures necessary for the creation of light-emitting device structures based on silicon-germanium nanoislands.

The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si waveguide layer were investigated using micro-photoluminescence (micro-PL) spectroscopy. As radiation sources, GeSi quantum dots were embedded in the waveguide. A set of narrow PL peaks superimposed on the broad bands were observed in the range of quantum dot emissions. At optimal parameters of Al nanodisks lattices, almost one order increasing of PL intensity was obtained. The experimental PL spectra are in good agreement with results of theoretical calculations. The realization of high-quality bound states in the continuum was confirmed by a comparative analysis of the experimental spectra and theoretical dispersion dependences. The results demonstrated the perspectives of these type structures for a flat band realization and supporting the slow light.

Production of heavy fermions in ultraperipheral collisions ( pp → p + γγ + p → p + χ^ + χ^ - + p ) and the semi-exclusive reaction ( pp → p + γγ* + X → p + χ^ + χ^ - + X ) is considered. Differential and total cross sections for the energies of the planned pp colliders are presented.

Analytical formulas describing the correction due to the $Z$ boson exchange to the cross section of the reaction $pp\rightarrow p\mu^+\mu^- X$ are presented. When the invariant mass of the produced muon pair $W\gtrsim 150~\text{GeV}$ and its total transverse momentum is large, the correction is of the order of 20%.

In this paper, we study the effects of GeSi quantum dot emission coupling with the collective modes in the linear chains of Si disk resonators positioned on an SiO2 layer. The emission spectra as a function of the chain period and disk radius were investigated using micro-photoluminescence (micro-PL) spectroscopy. At optimal parameters of the disk chains, two narrow PL peaks, with quality factors of around 190 and 340, were observed in the range of the quantum dot emission. A numerical analysis of the mode composition allowed us to associate the observed peaks with two collective modes with different electric field polarization relative to the chain line. The theoretical study demonstrates the change of the far-field radiation pattern with increasing length of the disk chain. The intensive out-of-plane emission was explained by the appearance of the dipole mode contribution. The obtained results can be used for the development of Si-based near-infrared light sources.