氧化锌薄膜材料由于具有高电导率、良好的光学透过率、原料储存丰富、成本低廉的特点,被认为是最具有潜力的透明导电薄膜.特别是其宽禁带(3.37eV)和高达60meV的激子束缚能,使其在环境温度制备同质结发光器件、太阳能电池电子传输层具有巨大的应用前景.然而,传统制备方法难以实现薄膜质量的综合调控,存在p-ZnO稳定性差、制备的薄膜重复性差、组装的器件效能较低等问题.高功率脉冲磁控溅射(HiPIMS)技术具有溅射材料离化率高的特点,非常适合需要离子反应的各类薄膜.当采用HiPIMS制备氧化物、碳化物、氮化物薄膜时,利用其高电离率还可以获得较高的靶离子和掺杂离子,可实现晶格替代、间隙原子等缺陷的形成,制备稳态的材料,如制备稳定p-型半导体材料.本文综述了近年来HiPIMS制备氧化锌薄膜的研究进展,主要是给出HiPIMS制备ZnO薄膜的放电特性和工艺参数的影响,最后展望了HiPIMS制备稳定p-ZnO薄膜的发展方向.

Al-N co-doped ZnO thin films were grown on glass substrate by high power reactive magnetron sputtering（HiPIMS）. We focus on the effects of nitrogen flow rate on the structure,morphology,and electrical properties of Al-N codoped ZnO thin films. The results show that the nitrogen flow rate plays an important role on the n-p type transformation and electrical properties of the conductivity type of Al-N co-doped ZnO thin films. When N2= 8 mL/min,the co-doped film is n-type. As the nitrogen fluxes was increasing,the carrier concentration was increased,and the film switched from ntype to p-type and then to n-type. In addition,the transmittance of Al-N co-doped ZnO film was as high as 85% in the visible light region. As 20 mL/min N2 was introduced,the Al-N co-doped ZnO film exhibits a good p-type conductivity with the resistivity of 4.51 Ω cm,a carrier concentration of 5.47×1017 cm-3 and a Hall Mobility of 2.7 cm2/Vs.