The first results of double -channel heterostructures with donor-acceptor doping and systems of alternating thin layers of AlAs/GaAs forming additional digital potential barriers study are presented. It is shown that due to the peculiarities of real space electron transfer in the proposed design, when the surface density of electrons with high mobility is doubled compared to traditional single-channel bilaterally doped heterostructures, even in the absence of digital barriers, the drift velocity overshot does not decrease. The introduction of digital barriers significantly increases the of electrons drift velocity overshot when they fly into the region of a strong field, bringing the drift velocity overshot in the corresponding heterostructures closer to the theoretical limit for the model used – the drift velocity overshot in the undoped bulk material of the channel.

The nonlocal dynamics of electrons in pseudomorphic AlGaAs/GaAs/InGaAs heterostructures with double-sided donor-acceptor doping of AlGaAs barriers and additional digital potential barriers of short-period AlAs/GaAs superlattices around the doped regions has been theoretically studied. For the studied heterostructures, the introduction of digital barriers significantly, by 30–40%, increases the electrons drift velocity overshot when they enter the region of a strong field. The effect of localization of hot electrons on the states in AlAs/GaAs superlattices along the edges of the InGaAs quantum well is revealed. It is shown that taking this effect into account significantly increases the electrons drift velocity overshot, bringing it closer to the maximum theoretical limit for the model used – the drift velocity overshot in the undoped InGaAs bulk material.

The first results of the electrons drift velocity study in inverted AlGaAs/InGaAs/GaAs pseudomorphic heterostructures with donor-acceptor doping and short-period AlAs/GaAs superlattices are presented. It is theoretically shown that the introduction of superlattices significantly, up to one and a half times, increases the electrons drift velocity overshot when they enter the region of a strong field. Localized states in the superlattice between the quantum well and the substrate have been found. It is shown that this effect leads to an additional increase in the electrons drift velocity overshot up to the theoretical limit for the model used, i.e., a drift velocity overshot in the bulk material of the quantum well.

The processes of nonlocal electron heating in transistor heterostructures based on gallium nitride and gallium arsenide were compared. It has been shown that, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field as compared with pure bulk GaAs, while in GaN-based heterostructures the decrease in the drift velocity overshot does not exceed 30% in the studied cases. Keywords: Real space transfer, field-effect transistor, gain factor

The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It is shown that if, in comparison with a pure bulk material, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field, then for GaN-based heterostructures, the decrease of the drift velocity overshot in the studied cases does not exceed 30%.

The nonlocal dynamics of electrons in pseudomorphic AlGaAs/GaAs/InGaAs heterostructures with double-sided donor-acceptor doping of AlGaAs barriers and additional digital potential barriers of short-period AlAs/GaAs superlattices around the doped regions has been theoretically studied. For the studied heterostructures, the introduction of digital barriers significantly, by 30-40%, increases the electrons drift velocity overshot when they enter the region of a strong field. The effect of localization of hot electrons on the states in AlAs/GaAs superlattices along the edges of the InGaAs quantum well is revealed. It is shown that taking this effect into account significantly increases the electrons drift velocity overshot, bringing it closer to the maximum theoretical limit for the model used --- the drift velocity overshot in the undoped InGaAs bulk material. Keywords: potential barriers, digital barriers, heterostructures, electrons drift velocity overshot.