Low-temperature device-quality GaAs layers with high resistivity were obtained by pulsed laser deposition. The properties of GaAs layers are sensitive to the process temperature. At a growth temperature of less than 300°C, the layers have low electron mobility and a shift of the GaAs stoichiometry towards the region of arsenic enrichment at a level of 1–2 at.%. At a growth temperature of more than 300° C., the layers show an improved crystalline quality. The dependence of the relative intensity of the As 3d photoelectron line on the growth temperature confirms this trend with a change in the growth temperature.

AbstractThe results of studying GaInAs/GaInP/GaAs photodiode structures grown by metal–organic vapor-phase epitaxy are reported. A procedure for the diagnostics of such multilayer structures is developed. The procedure is based on the application of Raman spectroscopy in combination with photoluminescence spectroscopy in the mode of the lateral scanning of transverse cleavages. The compositions of the GaInAs and GaInP solid solutions are determined.

AbstractNanosized films of stabilized zirconia with Au nanoparticles formed by implanting Au ions are studied by X-ray photoelectron spectroscopy and transmission electron microscopy. The effect of irradiation of films with Au ions and postimplantation annealing on the distribution of chemical elements and zirconium- containing ZrO_ x compounds over the depth of the films is studied. Based on the data on the dimensional shift of the Au 4 f photoelectron line, the average value of the nanoparticle size is determined.

Исследованы кристаллическая структура, состав, магнитные и электротранспортные свойств слоев MnxGay, осажденных на поверхность GaAs методами импульсного лазерного осаждения в потоке водорода, импульсного лазерного осаждения в вакууме и электронно-лучевого испарения в высоком вакууме. Показано, что особенности каждого из методов оказывают влияние на состав и кристаллическую структуру формируемых слоев, на степень резкости и кристаллического совершенства гетерограницы. Состав и кристаллическая структура, предположительно, обусловливают модификацию ферромагнитных свойств. Дефекты гетерограницы оказывают влияние на свойства диодной структуры MnxGay/GaAs, в частности на высоту потенциального барьера диода Шоттки.

A comparative study has been carried out of the radiation exposure influence on the surface morphology of siliconon-insulator and silicon-on-sapphire device structures. Before the exposure to radiation, the surface morphology of silicon films had a block nature with very much pronounced mosaic structure and average roughness of about 25 nm. Electron and X-ray radiation led to distinct relief smoothing of silicon film surface of SOI and SOS structures resulting in a more uniform nature of the surface microrelief. Thus, the radiation exposure made it possible to modify the surface morphology of silicon heterostructures.