The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor of 2.

Experimental results of studying the InAs islands formation of silicon surface by molecular beam epitaxy are presented. It has been found that, InAs islands with both bimodal and uniform size distributions can be formed depending on the Si surface relief and the presence of nanopits. The possibility of fabricating heterostructures with InAs quantum dots demonstrating photoluminescence in the region of 1.65 μm, was showed.

The spontaneous synthesis of InGaN/GaN nanowires of core-shell heterostructure using molecular beam epitaxy isinvestigated in the work. It is shown by electron microscopy that a wedge-shaped crack can form at In content x=0.4 and 0.04 in the core and shell correspondent. Based on the model of internal structural stresses, a formula is proposed for estimation of the critical size and composition for the formation of cracks in NWs.The estimations and experimental data of morphology agree with each other.