The feasibility of determining the elemental composition, chemical state, and element distribution across the depth in a subsurface region using the computer simulation of the electron inelastic scattering cross section is demonstrated with iron layers on silicon substrates. Analysis is carried out based on the dielectric theory and on the experimental determination of the product of the electron inelastic mean free path by the inelastic scattering cross section from reflected electron energy loss spectra.

This work is devoted to research of topography of a surface of radiotransparent thermoregulating coatings by a method of Atomic Force Microscopy

This paper reports on our study of the formation of an interface of layered structures in the Fe-Si system by reflected electron energy loss spectroscopy (REELS). Quantitative element analysis was performed using the product of the mean length of the inelastic free path by the inelastic scattering cross-section of electrons. It is shown that the Fe-Si interface is quite uniform.

The results of studying Fe/Si and Si/Fe layered structures with different thicknesses of the top layer by reflected electron energy loss spectroscopy are presented. A new method is proposed for the estimation of volume fractions of components in binary systems within the framework of the effective dielectric medium model.

The results of investigating the relative contribution of surface excitations to the reflection electron energy loss spectrum in pure silicon are presented. The primary electron energy is in the range 60–1000eV. Good agreement is obtained between the experimental values of the surface parameter P S and theoretical calculations. The relative contribution of surface excitations is also determined by decomposing the integral reflection electron energy loss spectra into Gaussian curves.