Based on the microscopic relaxation model of the configuration short-range atomic order and time dependence of changes in microhardness, the systematic evaluation of equilibrium and kinetics parameters of 'magneticsensitive' impurities in single-crystalline Si is carried out. Under the influence of constant and low-frequency modulated magnetic or super-high frequency electromagnetic fields, the anomalously large changes of the relative microhardness in Si of both n- and p-types caused by the rearrangement of 'magnetic-sensitive' impurities in Si matrix are revealed. The microhardness time-dependent relaxation at low-temperature annealing (298 and 373 K) is described reasonably by the exponential dependence (i.e. within the first-order relaxation model) that indicates on a dominant role of a 'slow' component of solid solution in the structural-time evolution of an imperfect crystal. The obtained values of activation energies and Fourier components of atomic jump frequencies during microdiffusion testify to a most probable interstitial mechanism of low-temperature impurity-atoms' migration under the effect of the external magnetic and electromagnetic fields.

As shown, under the influence of weak constant and variable magnetic fields, an evolution of structural state and topology of surface layers of silicon crystals takes place. Changes in structural perfection and a relief of silicon surface can be caused by spin-dependent process of surface oxide-film decomposition and by the adsorption process amplifying on magnetoactivated surface.

As revealed, the gradient magnetic field causes change of microhardness in the silicon crystals classified as magnetomechanical effect (MME). Oscillation of MME stimulated by magnetic influence change over a long period of time (congruent to 100 days) after the end of magnetic processing. Microhardness jumps in silicon, which was subjected to action of gradient magnetic field, can be connected with natural change (self-organising) of structure under the influence of periodically changing internal mechanical stresses.

The experimental magnetic treatment conditions of silicon crystals in a weak (B = 0.17 T) magnetic field which provide a long-term stability of magnetomechanical effect (MME) have been investigated. It is established that at long-term and cyclic magnetic processing, the MME relaxation is slowed down. The correlation character between the magnetic processing duration of investigated samples and MME relaxation time is established to be linear. A possible reason of MME prolongation at long-term and cyclic magnetic processing is absorption processes and interdefect reactions on the magnetic-field-activated silicon surface.

The experimental results indicating a change of micromechanical properties of single-crystalline silicon under action of super-high-frequency (SHF) microwave radiation are obtained. Dependences of values of both the relative microhardness, which is identified as magnetomechanical effect (MME), and the cracking-resistance coefficient of silicon crystals on both the frequency of microwave radiation and the time of its action are investigated. An influence of the type and concentration of alloying impurities on both the MME and the character of its relaxation is revealed. These effects are proposed to be explained within the framework of the mechanism caused by the evolution of a spin configuration in structural-defect nanoclusters.