The paper presents the design features and technology of the formation of a low-pressure sensor, which is a heater deposited onto the surface of a porous aluminum-oxide membrane formed on aluminum foil. The structure is fully formed using inexpensive low temperature methods. It is shown that an increase in the porosity of the membrane region separating the heating element and the substrate makes it possible to effectively measure a pressure up to 2 × 10–2 Pa.

The crystallization/amorphization processes of GST thin films under pulsed laser exposure were investigated. It was found that the optimal laser mode for GST crystallization and re-amorphization is $50 \mathrm{~mW} / 10 \mu \mathrm{s}$ and $106 \mathrm{~mW} / 50 \mathrm{~ns}$ respectively. We demonstrate the 11-multiple write/rewrite/ uniform-area of GST on the surface of large-size GST/ITO/Al/substrate structure for reflective display applications.

This paper describes manufacturing the film structures based on a polar copolymer of poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) using the process of drop-by-drop local deposition on metallized substrates. The produced samples were a crossbar structures of arrays of ferroelectric P(VDF-TrFE) microislands metallized with nickel stripes using a combined 2D printing method. For the polymer layer deposition, a number of solvents with different viscosities and dipole moments of molecules were considered, and their influence on the geometry and the polar properties of printed layers was shown. Using the piezoelectric force microscopy, the value of the piezoelectric modulus of d(33) at the nanoscale level was determined. This d(33) modulus is similar to values of d(33) for P(VDF-TrFE) films produced by the standard solvent cast method. On the base of amplitude of the pyroelectric current in the dynamic method, the value of the pyroelectric coefficient (p) was determined, varying from 2.10(-5) to 4.10(-5) C/(m(2)center dot K). These values are comparable to the pyroelectric coefficient of films P (VDF-TrFE) produced by the standard method. The highest values of d(33) and p correspond to structures produced from solutions containing more than 20% of propylene carbonate in the initial solvent, the molecules of which have a large (4,9 D) dipole moment.

This work is devoted to the technological features of creating an array of pyroelectric nanoparticles placed in the pores of a silicon oxide membrane, ensuring their thermal insulation both from each other and from the supporting substrate. Mechanisms of anodic oxidation of the Al/Ti/SiO2 structure, ensuring the self-organization of a nanostructured oxide mask with specified geometric parameters, have been established. It has been shown that from a certain thickness of the adhesion layer, overgrowing of the open areas of the mask with titanium oxide nanoparticles does not occur. The regularities of the method of local ion etching of multilayer structures are determined, which ensures control of the depth of the formed pores by controlling the ion current. A correlation has been established between the lateral size of the cavities in silicon and the aspect ratio of aluminum oxide pores. The possibility of forming a silicon oxide membrane with pyroelectric polymer nanoparticles embedded in its pores has been demonstrated.

The results of studying the self-organization of TiO2–Al2O3 memristive cells using the anodic oxidation of an aluminum–titanium structure are presented. Original approaches to this process make it possible to precisely control the thicknesses of the functional layers of aluminum and titanium oxides. To form the upper electrode, the use of catalytic chemical deposition is proposed, which allows the porous structure to be filled and an array of conductive buses to be organized on the surface. Measurements of the individual and group electrophysical properties of memristive cells confirm the operability of such structures as part of devices with crossbar addressing.

In this work, we have formed CuO memristive array embedded into porous SiO2 layer. Such an approach would create synaptic system on silicon substrate using standard integrated electronics operations. It also provides control over the geometric parameters of artificial synapses, which determines their synaptic weights. The results of synaptic behavior have shown that the value of synaptic weights and currents are dependent on the thickness of the CuO filled SiO2 porous layer.

The frequency dependence of real (epsilon') and imaginary (epsilon ''.) components of the complex dielectric permittivity has been determined for tin-thiohypodiphosphate Sn2P2S6 films in the temperature region from 150 to 400 K. There are two dielectric relaxation regions in the frequency range between 10(-1) and 10(7) Hz. The high-frequency dielectric dispersion region at 10(3)-10(7) Hz exhibits Debye type behaviour due to a semiconductor- metal interface barrier similar to a Schottky barrier. At low frequencies from 10(-1) to 10(3) Hz, dielectric response is nearly a "flat loss" at least in the low-temperature region. At elevated temperature, the flat dispersion region disappears and a strong linear decrease of epsilon '' (omega) is observed because of the dc conductivity.

In this work, a process solution for the formation of an array of piezo- and pyroelectric structures with the use of a matrix of nanoprofiled silica is demonstrated. It is proposed to use plasma etching through a hard mask of porous anodic alumina for the formation of the matrix. Nanoparticles of a ferroelectric copolymer of vinylidene fluoride with trifluoroethylene are formed in the pores of the matrix. The results of measurements of the piezoelectric and pyroelectric responses of this structure are presented.

В настоящей работе продемонстрирован технологический подход к формированию массива пьезо- и пироэлектрических структур с использованием матрицы нанопрофилированного оксида кремния. Для формирования матрицы предложено использовать метод плазменного травления через твердую маску пористого анодного оксида алюминия. В порах матрицы были сформированы наночастицы сегнетоэлектрического сополимера винилиденфторида с трифторэтиленом. Приведены результаты измерений пьезоэлектрического и пироэлектрического откликов этой структуры.