The effect of accompanying ion-beam treatment on the structure and properties of SnO 2 films synthesized by the method of high-frequency magnetron sputtering at room temperature and at 200°C is investigated. It is established that ion-beam processing does not affect the transparency and the band gap of the obtained tin-oxide films. The refractive index and resistivity change. At room temperature, the films are X‑ray amorphous, and at 200°C they are polycrystalline. X-ray diffraction and electron diffraction studies show the presence of a single phase of SnO 2 . Ion-beam treatment leads to a change in the preferred orientation of the crystallites. With increasing current of ion-beam processing, the grain sizes decrease.

The effect of ion-beam processing alternating with magnetron sputtering on the properties of zinc-oxide thin films is investigated. It is shown that ion-beam processing reduces the growth rate, coherent-scattering-region sizes, and the resistivity. The stoichiometric index, band gap, and refractive index increase. The transparency of the films in the weak absorption region remains unchanged.

The effect of ion-beam treatment, alternating with the magnetron sputtering process, on the properties zinc oxide of thin films is considered. Ion-beam treatment causes a decrease in the growth rate, the size of the coherent scattering regions and resistivity. The stoichiometric index, the band gap and the refractive index increase. The transparency of the films in the area of weak absorption does not change.