AbstractCharacteristic effects of magnetic ordering and conduction in semiconductor heterostructures with a GaAs : Be/Ga_0.84In_0.16As/GaAs quantum well and manganese δ-layers of different thickness (from 0.4 to 2 monolayers) were studied based on analysis of magnetic field and temperature dependences, galvanomagnetic effects, and magnetization. An anomalous dependence of the conductivity on the manganese atoms concentration in the δ-layer was observed, which was due to a strong scattering of charge carriers in the structures with the low content of magnetic impurities. Magnetic properties of the heterostructures clearly indicated the magnetic ordering of the impurity system (saturation and hysteresis of the magnetization and fulfillment of the Curie–Weiss law at increasing temperature). Parameters of the magnetic subsystem allowed revealing different types of ordering in the systems with different concentrations of the magnetic impurity. Changing the concentration of the Mn admixture in the δ-layer was shown to influence significantly the conductivity and magnetism in the studied structures.

Characteristic effects of magnetic ordering and conduction in semiconductor heterostructures with a GaAs : Be/Ga0.84In0.16As/GaAs quantum well and manganese δ-layers of different thickness (from 0.4 to 2 monolayers) were studied based on analysis of magnetic field and temperature dependences, galvanomagnetic effects, and magnetization. An anomalous dependence of the conductivity on the manganese atoms concentration in the δ-layer was observed, which was due to a strong scattering of charge carriers in the structures with the low content of magnetic impurities. Magnetic properties of the heterostructures clearly indicated the magnetic ordering of the impurity system (saturation and hysteresis of the magnetization and fulfillment of the Curie–Weiss law at increasing temperature). Parameters of the magnetic subsystem allowed revealing different types of ordering in the systems with different concentrations of the magnetic impurity. Changing the concentration of the Mn admixture in the δ-layer was shown to influence significantly the conductivity and magnetism in the studied structures.

Приводятся результаты исследований температурных и полевых зависимостей удельной намагниченности и магнитосопротивления в гетероструктурах с квантовой ямой GaAs/Ga0.84In0.16As/GaAs и с delta-слоем атомарного Mn, расположенным в барьерном слое вблизи квантовой ямы, заполненной дырками. Обнаружено изменение в поведении сопротивления и намагниченности при упорядочении локализованных магнитных моментов в покровном слое вследствие изменения топологии распределения ионов марганца. Работа выполнена в рамках федеральной целевой программы "Электрон" N 01201463326 при частичной финансовой поддержке программы фундаментальных исследований УрО РАН (грант N 15-7-2-32) и РФФИ (грант N 15-02-08909).

The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/Ga 0.84 In 0.16 As/GaAs quantum well and a δ-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.