Abstract—The characteristics of MWIRs focal plane aeeays made in the form of a hybrid chip based on a planar n+–p-HgCdTe focal matrix with 2048 × 2048 elements and a silicon multiplexer are considered. The temperature dependence of the reverse current of elements in the 125–300 K range had a characteristic Arrhenius dependence with an activation energy close to the band gap of the semiconductor and was limited by the diffusion component of the current. At a lower temperature, the current was limited by the generation of carriers with the participation of a deep level near the middle of the forbidden band. The histogram of the detectability of the elements of the matrix had the form of a symmetric curve with a maximum and an average value ≈ 1.3 × 1012 cm Hz1/2/W.

The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2–10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

We analyzed the C-V curves of CdхHg1-хTe-based (x ∼ 0.22) MIS structures with Al2O3 as an insulator. Alumina films were deposited on p and n type CdхHg1-хTe by atomic layer deposition. C-V curve specific features at high and low frequencies were found to be a result of the semiconductor-dielectric interface surface state influence. The surface state density was derived from the fitting experimental C-V curves at high and low frequencies with the theoretical model. The calculated curves were obtained by solving Poisson and continuity equations within the drift-diffusion model. The charge exchange between the surface states and permitted bands was supposed to be conducted using the Shockley-Read-Hall mechanism.

The characteristics of SWIR (1.6-3 mu m) 320 x 256 and 1024 x 1024 focal plane arrays (FPA's) based on n-type In-doped HgCdTe heteroepitaxial layers are reported. The HgCdTe layers were grown by molecular beam epitaxy on silicon substrates with ZnTe and CdTe buffer layers. p-n junctions were formed by arsenic ion implantation into HgCdTe film. Reverse current in the temperature range from 210 to 330 K was found to be limited by the diffusion mechanism. At the same time in the temperature range from 140 to 210 K the reverse current was dominated by the thermal generation of charge carriers through deep traps located in the middle of the band gap. At 170 K NETD was less than 40 mK (C) 2016 Elsevier B.V. All rights reserved.

The parameters of multilayer CdxHg1–xTe heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p +–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 1015 cm–3. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n +–p-type diodes.

We studied the electrical properties of undoped and indium-doped and arsenic-doped Cd X Hg 1-X Te layers with x ≈ 0.3 - 0.4 grown by molecular beam epitaxy on Si (310) substrates. After the growth HgCdTe layers were annealed at mercury atmosphere. The lifetime at room temperature in the As-doped layers, do not depend on its carrier concentration. The lifetime in indium-doped layers increased after annealing at saturated mercury vapor pressure. It is explained by suppression of recombination centers density. Temperature dependence of the reverse currents of p +- n junctions fabricated in Cd 0.3 Hg 0.7 Te heterostuctures grown by MBE on Si substrates has been studied.

Приведены результаты исследования параметров многослойных гетероструктур CdxHg1-xTe для фотоприемников диапазона длин волн до пяти микрометров, выращенных методом молекулярно-лучевой эпитаксии на кремниевых подложках. Методом C-V-характеристик исследованы пассивирующие свойства тонких слоев CdTe на поверхности таких структур. Исследованы температурные зависимости времени жизни неосновных носителей заряда в фотопоглощающем слое после роста и после отжигов. Фотодиоды p+-n-типа были изготовлены ионной имплантацией мышьяка в слои n-типа проводимости, легированные In с концентрацией (1-5)·1015 см-3. Измерены температурные зависимости обратных токов при нескольких напряжениях смещения, которые оказались почти на 2 порядка меньше, чем у n+-p-диодов.

Electrophysical properties of multilayered heteroepitaxial structures of Hg1-xCdxTe with x=0.3-0.4 grown by molecular beam epitaxy on silicon substrates are presented. The passivating effect of thin CdTe layers grown on top of the structures in single process is demonstrated. Comparison between experimental and theoretical temperature dependencies of reverse currents in n-on-p and p-on-n diodes fabricated by boron and arsenic ion implantation in vacancy-doped p-type and In-doped n-type Hg1-xCdxTe films, respectively, are presented. The influence of p-n junction position in double-layer heterostructure on temperature dependencies of reverse currents is examined. (C) 2016 WILEY-VCH Verlag GmbH & Co.

We investigated the temperature dependences of reverse current of "p-on-n" and "n-on-p" junctions fabricated in Cd0.39Hg0.61Te and Cd0.38Hg0.62 heterostuctures grown by MBE on Si substrates. The experimental data of reverse current through "p-on-n" junction in Arrhenius coordinates described by the diffusion of charge carriers in temperature range 210-330 K and carrier generation through the deep level located in the middle of the band gap in temperature range of 138-210K. The experimental data of reverse current through "n-on-p" junction in Arrhenius coordinates described by diffusion of charge carriers in temperature range 170-300 K and carrier generation through the deep level located in the middle of the band gap in temperature range 130-170K, At temperature range 77-130 K reverse current through "n-on-p" junction was constant and depended on bias voltage. (C) 2015 Elsevier B.V. All rights reserved.

The influence of electron energy quantization in a space-charge region on the accumulation capacitance of the InAs-based metal-oxide-semiconductor capacitors (MOSCAPs) has been investigated by modeling and comparison with the experimental data from Au/anodic layer(4-20 nm)/n-InAs(111)A MOSCAPs. The accumulation capacitance for MOSCAPs has been calculated by the solution of Poisson equation with different assumptions and the self-consistent solution of Schrödinger and Poisson equations with quantization taken into account. It was shown that the quantization during the MOSCAPs accumulation capacitance calculations should be taken into consideration for the correct interface states density determination by Terman method and the evaluation of gate dielectric thickness from capacitance-voltage measurements.

Results of studying the possibilities of passivating InAs surfaces by ultrathin oxide films (∼3 nm) in a glow-discharge plasma and producing tunnel MIS photodiodes on this basis are presented together with results of investigating the kinetics of oxidation and the chemical composition of oxide films formed. This is the first time when anhysteretic dependences of the capacitance on the bias are observed for InAs-based MIS structures at the liquid nitrogen temperature in a wide field range (from −7 · 106 to +5 · 106 V/cm). MIS structures are IR-photosensitive in the current mode. The estimated values of detectability are D* = 2.6·1012–8.2·1012 cm·Hz1/2·W−1 and D* = 1.5·1011 cm·Hz1/2·W−1 at temperatures of 78 and 198 K, respectively. The ampere-watt sensitivity value at a temperature of 78 K is 0.98 A/W, and the quantum efficiency is 0.43 (with no antireflecting coating of the InAs substrate and sapphire window).

Coefficients of heat transfer to the surface in a laminar hypersonic flow (M ∞ = 21) over plane and axisymmetric models with a compression corner are presented. These coefficients are measured by an infrared camera. The parameters varied in the experiments are the angle of the compression corner and the distance to the corner point. Characteristics of the flow with and without separation in the corner configuration are obtained. The measured results are compared with direct numerical simulations performed by solving the full unsteady Navier-Stokes equations. Experiments with controlled streamwise structures inserted into the flow are described. A substantial increase in the maximum values of the heat-transfer coefficient in the region of flow reattachment after developed laminar separation is demonstrated.

Problems of using charge-injected devices in hybrid infrared focal plane arrays are considered.

Results of experimental investigation of thermography systems based on InAs CID elements of line and matrix hybrid modules (a thermal imager and IR microscope) are presented. Owing to a high time stability, in the short-wave IR range, the implemented thermography systems have a temperature resolution of ∼(4–8) mK for an effective frame frequency of 1–10 Hz.