The electrical properties of the oxide Ce0.8Cu3V4O12 were studied at pressures up to 50 GPa. The samples have been synthesized by barothermal method. These compounds crystallize in the cubic symmetry with a perovskite-type structure. At ambient pressure in the temperature range from 10 to 300 K Ce0.8Cu3V4O12 - oxide has a metallic conductivity. Electrical resistance of the examined compounds measured at room temperature decreases when the pressure is raised from 16 to 50 GPa. There are two interval, where the resistance first falls rapidly with the pressure increase, and then the rate of the drop in resistance slows sharply. The baric dependencies of the magnetoresistance were obtained at the magnetic field up to 1 T. The values of the magnetoresistance are negative and amount 2% at pressure 22 GPa. The pressure range PT was determined, where a significant change of properties takes place. The results obtained for Ce0.8Cu3V4O12-oxide and the data of compounds ACu3V4O12 (A - Gd, Tb, Er, Tm) have been compared. A shift of the PT regions towards higher pressures with increasing serial number A was found. The manifestation of the effect of chemical contraction may be associated with a change in the crystal and electronic structure is assumed.

CeCu3–xMnxV4O12 (x = 0–3) with perovskite-like structure are synthesized at high pressures and temperatures. Their crystal structures are characterized by X-ray diffraction (space group Im\(\bar 3\), Z = 2). The temperature dependences of their electroresistance are studied.

We have prepared ceramic CaCu3Ti4O12 samples by solid-state reaction and investigated the effect of high-pressure/high-temperature processing (p = 8.0 GPa, t = 1100°C) on the structure and electrical properties of CaCu3Ti4O12.

CaCu3Ti4O12 is prepared by means of solid-state sintering. The effect of thermobaric treatment (P = 8.0 GPa and T = 1100°C) and partial replacement of titanium by vanadium on the microstructure and dielectric properties of CaCu3Ti4O12 are investigated.

The effects of high pressures on the electrical properties of the polycrystalline CuInSe2 and CuInS2 are studied. The resistance, magnetoresistance, thermoelectromotive force, impedance, admittance and loss tangent in high-pressure phases are estimated. The baric ranges of substantial changes in the behavior of all the investigated characteristics are determined.

This paper is devoted to the analysis of structure of amorphous ionic conductors AgGe1+xAs1-xS3 with carbon nanotubes content, x = 0.4; 0.5; 0.6 by means X-ray and Raman spectroscopy. The influence of DC and AC electric field on the electrical properties of materials at ambient pressure, and at pressures up to 50 GPa was studied.

The perovskite-like compound Dy x Cu 3 V 4 O 12 ( x = 0.67–0.75) is synthesized under high pressure ( P = 4.0–9.0 GPa) and temperature ( T = 1000°C). Its crystal structure is determined ( Im -3 space group, Z = 2, a = 7.29348(7) Å) by means of powder X-ray diffraction. The basic lengths and bond angles are defined. It is found that the high-pressure phase of Dy x Cu 3 V 4 O 12 is characterized by metallic conductivity and paramagnetic properties.

New ACu(3)V(4)O(12) (A=Gd, Tb, Er) phases have been prepared at high pressure and high-temperature conditions (P approximate to 8-9GPa, T approximate to 1000 degrees C) in a toroid-type high pressure cell. These compounds crystallize in the cubic symmetry with a perovskite-like structure. At ambient pressure, they are paramagnetic and have activation-type conductivity. The effect of high pressure (10-50GPa) on the electrical properties of the materials was analyzed in the temperature range from 78 to 300K. Pressure ranges of the transition from activation type to metallic conductivity have been determined. The crystal structure of ACu(3)V(4)O(12) (A=Gd, Tb, Er) was found to be stable up to 50GPa.

A new perovskite-like compound Gd x Cu 3 V 4 O 12 ( x = 0.67−0.73) is synthesized under high pressures ( P = 4−9 GPa) and at high temperatures ( T = 1000°C). Its structure (space group Im3, Z = 2, a = 7.2930(5) Å) is estrablished by X-ray analysis. The bond lengths and bond angles are determined. The temperature dependences of electrical resistivity (10–300 K) and magnetic susceptibility are studied. The high-pressure Gd x Cu 3 V 4 O 12 phase is found to have a semi-conductor type of conductivity and paramagnetic properties.

Samples of high pressure perovskite-like phases CaCu3Ti4-xVxO12, x = 0.1, 0.2, 0.3, 0.4 and 0.5 were synthesized at high-pressure and high -temperature conditions in a toroidtype high-pressure chamber. Their electrical properties were studied by impedance spectroscopy in the frequency range from 1 Hz to 30 MHz at temperatures of 300 to 600 K and at pressures of 10 to 30 GPa.

Tm x Cu 3 V 4 O 12 , a perovskite-like oxide (space group, Im-3 ; Z = 2; a = 7.279–7.293 Å) containing vacancies in its cationic sublattice, was obtained barothermally ( P = 7.0–9.0 GPa, t = 1000–1100°C) for the first time. The temperature dependences on the electrical resistivity (10–300 K) and the magnetic susceptibility (0–300 K) were investigated. It was shown that the oxide Tm x Cu 3 V 4 O 12 is characterized by metal-type conductivity and paramagnetic properties.

The results from experimental investigations on the effect of high pressures (10–50 GPa) on the electrical properties and magnetoresistance of the perovskite-like high-pressure state of CaCoCu 2 V 4 O 12 are presented. The pressure ranges of substantial changes in the behavior of electrical characteristics are determined.

A perovskite-like compound of composition CaCu3 − x Fe x V4O12 (x = 0.7−1.0) has been synthesized at high pressures (p = 5.0−8.0 GPa) and temperatures (t = 1000−1300°C). Its crystal structure has been determined by X-ray diffraction (sp. gr. \(Im\bar 3\), Z = 2, a = 7.3051(5) angles have been evaluated. The electrical conductivity of the high-pressure phase CaCu2FeV4O12 exhibits metallic behavior.