The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals, the gauge factor at liquid-helium temperature is GF4.2K ≈ 72 for the charge carrier concentration of 2∙1017 сm–3, while being GF4.2K ≈ 47 for the concentration of 6∙1017 сm–3, at ε = –3∙10–4 rel. un. For the development of magnetic field sensors based on the magnetoresistive principle, the effect of a giant magnetic resistivity reaching 720% at a temperature of 4.2 K is used.

Piezoresistive characteristics of undoped and doped by tellurium with different concentration InSb thin layers were studied in wide range of strain (ε = ± 1.3 × 10-3 rel. un.) and temperature (180 ÷ + 100) °С. The highest values of the gauge factor were obtained in n-type conductivity InSb thin layers doped by tellurium to concentration of (4 ÷ 7) × 1016 см-3. Sensitive elements of strain gauges could be created on the basis of such layers. The influence of hydrostatic pressure up to 5000 bar on electrophysical properties of undoped and doped by tellurium and zinc InSb thin layers were also studied. The values of the hydrostatic pressure coefficients for these layers and their temperature dependences were determined in the temperature range (75 ÷ + 80) °С. The greatest sensitivity to hydrostatic pressure (K20°С ≈ 46) was revealed in InSb samples doped with zinc. Recommendations for the use of InSb thin layers as sensitive elements of pressure sensors were given.

The design of the seismic sensor the principle of action of which is based on tensoresistive effect is proposed. The possibilities of the use of p-type boron doped silicon whiskers as sensitive elements were examined. The developed sensor is designed to measure both static and dynamic strain in the frequency range 0–800 Hz. It was shown that the advantages of this seismic sensor over the counterparts are a weak dependence on the magnetic field, electron irradiation and broad band signals.

In this paper we consider the accelerometer sensor, which is made using the combined technology of silicon-on-insulator and silicon nanowires. On its basis a fast-response, high-speed, highly sensitive to acceleration and displacement a device was developed with submicron and topological nanometer dimensions. This made it possible to implement as a discrete device or element of nanoelectromechanical systems integrated with the structure of silicon-on-insulator, which provides control of movement with an accuracy of 200 nm

Complex studies aimed at the creating of piezoresistive pressure sensors based on silicon whiskers operating at cryogenic and high temperatures were carried out. The sensor’s design is based on the diaphragm — rod — beam system with the universal strain unit that, due to it’s universality, gives the possibility to create piezoresistive sensors to measure static and dynamic pressures from 100 kPa to 20 MPa operating in the wide temperature range.Developed method of silicon strain gauges, mounted by glass adhesive C51-1 on the spring elements of covar alloy provides the operating pressure sensors in the temperature range +20…+350°С. Pressure sensors based on boron doped silicon whiskers with resistivity 0,005 - 0,006 Оhm×сm, operating at low temperatures in the range -269...+20°С, and with boron concentration in the vicinity of metal-insulator transition (MIT) high sensitive liquid helium pressure sensors were created. Different pressure sensors for medical diagnostics were also developed.

Conductance and magnetoresistance of Si whiskers with diameters 5-40 mkm doped with B impurity were investigated in temperature range 4,2÷300 К, frequency range 1÷1106 Hz and magnetic fields with intensity up to 14 Т by method of impedance spectroscopy. Impedance investigations showed that dopingconcentration in the crystals are становлять 3,61018 сm-3 and 5,21018 сm-3 which is correspondent to metal dielecric transition. Hopping conductance on impurity states was shown to be realized in the crystals in low temperature region which leads to appearance of negative magnetoresistance