The effect of combined doping by shallow donor and acceptor impurities on boosting the quantum yield of porous-silicon photoluminescence (PL) in the visible and near IR range was studied using phosphorus and boron ion implantation. Nonuniform doping of samples and subsequent oxidizing annealing were performed before and after porous silicon was formed on silicon single crystals strongly doped by arsenic or boron up to ≈10 19 cm −3 . The concentration of known P b centers of nonradiative recombination was controlled by electron paramagnetic resonance. It is shown that there is an optimal joined content of shallow donors and acceptors that provides a maximum PL intensity in the vicinity of the red part of the visible spectrum. According to estimates, the PL quantum yield in the transitional n ++ - p + or p ++ - n + layer of porous silicon increases by two orders of magnitude as compared to that in porous silicon formed on silicon not subjected to ion irradiation.

The effect of joint phosphorus and boron ion implantation doping by shallow donor and acceptor impurities on the enhancement of porous silicon (PS) photoluminescence (PL) quantum output has been studied in the visible and near-visible IR radiation bands. The impact of ion irradiation and subsequent oxidizing annealing on PL and electron paramagnetic resonance of samples has been investigated before and after PS formation on silicon single crystals heavily arsenicor boron-doped up to the level of ≈1019 cm-3. It has been shown that there exists an optimum joint content of shallow donors and acceptors providing the maximum of PL intensity near the red edge of the visible spectrum. The PL quantum output is estimated 100 times higher as compared to that of PS formed on silicon without ion irradiation.