В работе исследованы мемристоры на базе нанокомпозита (НК) (CoFeB) x(LiNbO3)1-x и построена на их основе импульсная нейроморфная сеть (ИНС) с четырьмя входными и одним выходным нейроном. Было показано, что в ИНС на основе НК мемристивных синапсов, помимо частотного, возможно и временное кодирование образов.
The memristive properties of layered capacitor structures based on the nanocomposite (Co40Fe40B20)x(LiNbO3)100-x and LiNbO3 with thicknesses of 10 and 40 nm, respectively, have been studied. For the first time, a sharp transition from a single to multi-filament resistive switching mechanism, which occurs when the content of the metal phase in the nanocomposite is increased, is demonstrated and explained on the basis of the previously proposed model.
Influence of oxygen and water vapor in vacuum chamber during the deposition process of (Co40Fe40B20)x(LiNbO3)100-x thin film nanocomposites on electrical properties has been investigated. A significant growth in the electrical resistivity of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites has been established with an increase in reactive gases partial pressure (oxygen and water vapor). It has been found, that the recrystallization temperature of composites deposited in argon atmosphere also increases with metallic phase concentration. While the recrystallization temperature of (Co40Fe40B20)x(LiNbO3)100-x nanocomposites sinthesized in mixed atmosphere of Ar with the reactive gases (oxygen or water vapor) decreases due to increase of the heterogeneous structure oxidation.
