The crystal structure of a ternary sulfide with the approximate composition LiCuS, which is a promising candidate for environment-friendly battery and solar cell materials is reported. The crystal structure was solved by a combination of neutron and X-ray powder diffraction data, and Li-7 solid-state NMR analysis. A yellow powder, Li1.1Cu0.9S, was obtained by the reaction of CuS with a slight excess of Li metal. The compound crystallizes in the Na3AgO2 structure type in the space group Ibam. An idealized crystal structure of Li1.1Cu0.9S can be derived from the cubic Li2S structure by moving a part of the Li along the c axis so that these Li atoms become linearly coordinated by S. All the metal sites are occupied by randomly mixed Li and Cu atoms; however, there is a strong preference for linear coordination by Cu. The density functional theory calculations show that Li1.1Cu0.9S is a direct band-gap semiconductor with an energy gap of 1.95 eV in agreement with experimental data. (C) 2016 The Authors. Published by Elsevier Masson SAS. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors AMnAs (A = Li, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. From neutron and X-ray diffraction measurements on LiMnAs we have observed a magnetic phase transition corresponding to the Neel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory (DFT) calculations.

Antiferromagnetic semiconductors are new alternative materials for spintronic applications and spin valves. In this work, we report a detailed investigation of two antiferromagnetic semiconductors $A$MnAs ($A=\mathrm{Li}$, LaO), which are isostructural to the well-known LiFeAs and LaOFeAs superconductors. Here we present a comparison between the structural, magnetic, and electronic properties of LiMnAs, LaOMnAs, and related materials. Interestingly, both LiMnAs and LaOMnAs show a variation in resistivity with more than five orders of magnitude, making them particularly suitable for use in future electronic devices. Neutron and x-ray diffraction measurements on LiMnAs show a magnetic phase transition corresponding to the N\'eel temperature of 373.8 K, and a structural transition from the tetragonal to the cubic phase at 768 K. These experimental results are supported by density functional theory calculations.

This work reports on the electronic and crystalline structure and the mechanical, magnetic, and transport properties of the polycrystalline Heusler compound Co${}_{2}$MnGe. The crystalline structure was examined in detail by extended x-ray absorption fine-structure spectroscopy and anomalous x-ray diffraction. The compound exhibits a well-ordered $L{2}_{1}$ structure as is typical for Heusler compounds with 2:1:1 stoichiometry. The low-temperature magnetic moment agrees well with the Slater-Pauling rule and indicates a half-metallic ferromagnetic state of the compound, as is predicted by ab initiocalculations. Transport measurements and hard x-ray photoelectron spectroscopy were performed to explain the electronic structure of the compound. The obtained valence band spectra exhibit small energy shifts that are the result of the photoexcitation process, whereas electron-electron correlation in the ground state is negligible. The vibration and mechanical properties of the compound were calculated. The observed hardness values are consistent to a covalent-like bonding of Co${}_{2}$MnGe.

The class of half-Heusler compounds opens possibilities to find alternatives for II-VI or III-V compound semiconductors. We aim to find suitable substitutes for the cadmium sulphide buffer layer in chalcopyrite-based thin film solar cells, where the buffer layer is located between the p-type chalcopyrite absorber and an n-type transparent window layer. We report here the preparation of radio-frequency-sputtered lithium copper sulphide "LiCuS" and lithium zinc phosphide "LiZnP" films. The optical analysis of these films revealed band gaps between 1.8 and 2.5 eV, respectively. Chemical properties of the film surface and both interfaces between the film and a Cu(In,Ga)Se-2 layer and between the film and an (Zn,Mg)O layer were investigated by in-situ photoelectron spectroscopy. The valence band offsets to the Cu(In,Ga)Se-2 layer were estimated to be (0.4 +/- 0.1) eV for "LiCuS"/Cu(In,Ga)Se-2 and (0.5 +/- 0.8) eV for "LiZnP"/Cu(In,Ga)Se-2. This leads to positive conduction band offsets of > 1 eV. These rather large offsets are not compatible with efficient solar cell devices. Under atmospheric conditions "LiCuS" and "LiZnP" films show rapid decomposition. (C) 2010 Elsevier B.V. All rights reserved.

This work reports on the experimental investigation of the wide band gap compounds LiMgZ (Z = P, As, Sb), which are promising candidates for opto-electronics and anode materials for Lithium batteries. The compounds crystallize in the cubic (C1_b) MgAgAs structure (space group F-43m). The polycrystalline samples were synthesized by solid state reaction methods. X-ray and neutron diffraction measurements show a homogeneous, single-phased samples. The electronic properties were studied using the direct current (DC) method. Additionally UV-VIS diffuse reflectance spectra were recorded in order to investigate the band gap nature. The measurements show that all compounds exhibit semiconducting behavior with direct band gaps of 1.0 eV to 2.3 eV depending on the Z element. A decrease of the peak widths in the static 7Li nuclear magnetic resonance (NMR) spectra with increasing temperature was observed, which can directly be related to an increase of Li ion mobility.

The compounds LiAlSi and LiAlGe were synthesized and their thermoelectric properties and temperature stability were investigated. The samples were synthesized by arc melting of the constituent elements. For the determination of the structure type and the lattice parameter, x-ray powder diffraction was used. Both compounds were of the C1 b structure type. The stability of the compounds was investigated by differential thermal analysis and thermal gravimetry. The Seebeck coefficient and the electrical resistivity were determined in the temperature range from 2 K to 650 K. All compounds showed p-type behavior. The thermal conductivity was measured from 2 K to 400 K. The evaluation of the thermal conductivity yielded values as low as 2.4 W m−1 K−1 at 400 K for LiAlGe. The low values are ascribed to high mass fluctuation scattering and a possible rattling effect of the Li atoms.