Summary form only given, as follows. This paper reports on the design, fabrication, and test of key MMIC components developed for wideband Transmit/Receive Module applications in the framework of a bilateral research program at system level between Italy and Sweden MoDs (M-AESA) with technological studies performed in order to guarantee the feasibility of main hardware critical aspects. The chip set comprises a multi-function phase-amplitude control chip (“core-chip”) and two wideband HPA MMICs.

The development of a single bias S-band MMIC HPA designed for radar T/R module applications is reported. The chip was fabricated with a low-cost 0.5µm GaAs PHEMT process and is composed of two stages, with a final stage of 29 mm gate-width periphery. The MMIC power amplifier is designed by using a zero gate bias configuration and therefore is attractive due to the size and cost reduction. In the frequency bandwidth 2.4–3.6GHz, the HPA biased at Vd=10V delivers an output power of 20W @ 4dB of gain compression, with an associated PAE of circa 28%.

In this paper an innovative solution leading to high performance/low-cost multi-domain T/R modules, utilizing emerging semi-conductor technologies such as GaN and SiGe, will be outlined. In particular a complete X-Band TRM MMIC chip-set based on GaN for the front-end RF functions and on SiGe multifunction chip for signal amplitude and phase control will be presented. The GaN front-end RF functions comprise state-of-the-art HPA, robust LNA and high power SPDT switch MMICs designed and fabricated by Selex Sistemi Integrati internal facilities. The SiGe multifunction Core Chip has been designed by Selex Sistemi Integrati employing a low-cost SiGe BiCMOS commercial process.

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

In this paper is reported the design, fabrication and test of a mixed-signal SiGe X-band multi-function control MMIC for phased array radar applications. Said MMIC, fabricated, with the ST-Microelectronics BiCMOS7RF SiGe technology, comprises a 5-bit phase shifter, 5-bit attenuator, SPDT switches, several gain amplifiers and a digital serial to parallel converter to reduce the number of MMIC I/O control lines. The gain amplifiers are implemented using SiGe HBTs, while phase shifter, attenuator and SPDT switches are based on CMOS transistors. The measurement results show a return loss better than 15 dB and a gain of 17 dB, equal in both RX and TX state. In RX mode the obtained noise figure is lower than 10 dB, while in TX mode the output P1 dB is higher than 12 dBm. The achieved RF performance, the low power consumption and associated low cost, make this SiGe control-chip an attractive solution for high performance/low cost Tx/Rx components for phased array radar applications.

In this paper design, fabrication and test of three X-Band robust LNA MMICs in microstrip GaN technology are presented to better understand the key aspects of performance versus robustness trade-off for said components. In particular LNAs with different number of amplification stages, input device gate peripheries and topologies have been evaluated with the objective of achieving in the 8-11 GHz frequency range a NF better than 2.5dB, associated gain of circa 20 dB and overdrive power survivability better than 38 dBm.On-wafer measurements of LNA performance and robustness have been carried out in order to evaluate the incident power failure mechanisms and to individuate the best design approach for optimum performance/robustness trade-off.With one of the three LNA designs a NF < 2dB, G(ass) of 20 dB and P-1dB > 15dBm has been achieved in the entire 8-11GHz bandwidth. Said MMIC can withstand a 39dBm CW input power without any observable performance degradation.

In this paper a first iteration X-band T/R module based on a GaN-HEMT MMIC Front-End chip-set, comprising a power amplifier, robust low-noise amplifier and power switch will be presented. Even though ultimate T/R module performance cannot be achieved with current GaN-HEMT technological maturity the impact that this technology can have at systems level in terms of performance/cost trade-off will be illustrated by means of a preliminary innovative module architecture which foresees the elimination of more traditional T/R module components such as ferrite circulator and limiter for front-end signal routing and protection.

In this paper a first iteration X-band T/R module based on a GaN-HEMTMMICFront-End chip-set, comprising a power amplifier, robust low-noise amplifier andpower switch will be presented. Even though ultimate T/R moduleperformance cannot be achieved with current GaN-HEMTtechnological maturity the impact that this technology can have at systems level in terms ofperformance/cost trade-off will be illus­ trated by means ofa preliminary innovative module archi­ tecture which foresees the elimination of more traditional T7R module components such as ferrite circulator and lim­ iterforfront-end signal routing andprotection.

In this paper a first iteration X-band T/R module based on a GaN-HEMT MMIC front-end chip-set, comprising a power amplifier, robust low-noise amplifier and power switch will be presented. Even though ultimate T/R module performance cannot be achieved with current GaN-HEMT technological maturity the impact that this technology can have at systems level in terms of performance/cost trade-off will be illustrated by means of a preliminary innovative module architecture which foresees the elimination of more traditional T7R module components such as ferrite circulator and limiter for front-end signal routing and protection.

In this paper the design, fabrication and test of XBand and 2-18GHz wideband high power SPDT MMIC switches in microstrip GaN technology are presented. Such switches have demonstrated state-of-the-art performances. In particular the XBand switch exhibits 1dB insertion loss, better than 37dB isolation and a power handling capability at 9 GHz of better than 39dBm at 1dB insertion loss compression point; the wideband switch has an insertion loss lower than 2.2dB, better than 25dB isolation and a power handling capability of better than 38dBm in the entire bandwidth.

In this article the design, fabrication and test of X-band and 2-18 GHz wideband high power SPDT MMIC switches in GaN technology are presented. Said switches have demonstrated state-of-the-art performance and RF fabrication yields better than 65%. In particular the X-band switch exhibits an on-state power handling capability of better than 37 dBm at the 1 dB insertion loss compression point and the wideband switch shows an insertion loss compression of 1 dB for input power higher than 34.3 dBm in the entire bandwidth.

The development of a compact S/C-band PHEMT MMIC power amplifier is reported. The MMIC is a single-biased two-stages HPA with a 15 mm gate-width output transistor. In the 3.5-4.0 GHz frequency bandwidth, CW output power is 39.0 plusmn 0.25 dBm, associated gain is 16.5 plusmn 0.25 and PAE ranges from 30 to 35 %; in pulsed operation mode (10% duty cycle), for the 3.5-4.3 GHz frequency bandwidth the output power is 39.5 plusmn 0.2 dBm and the associated gain is 19.5 plusmn 0.2 dB