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Analysis of the integrated circuits of a microelectronic device depends on delayering. Focused ion beam (FIB) or broad ion beam (BIB) milling are effective complementary methods of delayering. FIB provides higher removal rates, but is limited in the effective area that can be revealed per unit time, while BIB provides lower removal rates, but has the advantage with respect to the size of the field of view produced. Microstructural features and the appearance of defects were identified and tracked for two model systems: Cu vias and Cu TSVs (through-silicon vias).

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

With the recent advances made in monochromation of electron sources and Cs-correction, the point resolution of the transmission electron microscope (TEM) has been extended into the sub-Angstrom regime. This development has led to an important consequence—that specimen preparation has become a more critical issue for the materials scientist. Nanoscale artifacts that could be tolerated a few years ago when imaging in the 0.1–0.15 nm range can no longer be allowed. An example is hydrocarbon contamination, which although only a few monolayers thick, obscures the area of interest. Other examples include residual deformation and oxidation following traditional mechanical methods. Ion-based methods may induce amorphization and implantation defects, depending on the type of ion, its energy, and the particular protocol that is used.

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Abstract A packaged device based on a ball grid array or other design presents a challenge to the failure analyst. Accessing one of the metal levels from the topside requires decapsulation by either a wet, predominantly dry (RIE) or a completely dry (mechanical) treatment. To reveal the details of the gate including the gate oxide, new approaches to selective etch delineation by RIE are required. This article presents an automated sample preparation method for packaged microelectronic materials by combining plasma cleaning, ion beam etching, reactive ion etching and ion beam sputter coating. A single etch gas chemistry was effective in phase delineation by RIE. Future work to further delineate the gate oxides could support accurate metrology by means of FESEM rather than field emission transmission electron microscope.

We have developed a new fast electron diffractometer working with high dynamic range and linearity for crystal structure determinations. Electron diffraction (ED) patterns can be scanned serially in front of a Faraday cage detector; the total measurement time for several hundred ED reflections can be tens of seconds having high statistical accuracy for all measured intensities (1-2%). This new tool can be installed to any type of TEM without any column modification and is linked to a specially developed electron beam precession "Spinning Star" system. Precession of the electron beam (Vincent-Midgley technique) reduces dynamical effects allowing also use of accurate intensities for crystal structure analysis. We describe the technical characteristics of this new tool together with the first experimental results. Accurate measurement of electron diffraction intensities by electron diffractometer opens new possibilities not only for revealing unknown structures, but also for electrostatic potential determination and chemical bonding investigation. As an example, we present detailed atomic bonding information of CaF(2) as revealed for the first time by precise electron diffractometry.

Abstract The SiLK resins, composed of aromatic hydrocarbons, are a family of highly cross-linked thermoset polymers with isotropic dielectric properties. Patterning of SiLK for high aspect ratio copper interconnects has depended on reactive ion etching with oxygen/nitrogen gas mixtures. Reactive ion etching is therefore also accomplished with reducing plasmas such as nitrogen/hydrogen. An additional plasma cleaning step can be inserted after the reactive ion etching (RIE) step, so that any residual contamination is removed prior to imaging or final sputter coating. Automated sample preparation of microelectronic materials containing high and low-k dielectrics for FESEM is accomplished in this article by combining these techniques: plasma cleaning, ion beam etching, and reactive ion etching. A single RIE chemistry was effective in etching both dielectrics as well as delineating the other phases present.

Extended abstract of a paper presented at the Pre-Meeting Congress: Materials Research in an Aberration-Free Environment, at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, July 31 and August 1, 2004.

Analytical practice in the semiconductor industry requires rapid, efficient and reliable cross – sectional sample preparation prior to FESEM.[1] An integrated preparation technique has been developed that combines plasma cleaning (PC), argon ion beam etching (IBE), reactive ion beam etching (RIBE), reactive ion etching (RIE), and ion beam sputter coating (IBSC) in a single vacuum chamber, Fig. 1.[2] PC incorporates an inductively coupled, RF generated (Ar– 25%O2) plasma to remove residual hydrocarbons by chemical reduction to CO/CO2/H2O. The removal of contamination enhances the quality of subsequent processes and in particular the application of conductive coatings.[3, 4] IBE or RIBE requires that a sample be tilted and rotated in relation to an incident ion beam. For this research, a hollow anode discharge (HAD) ion source was utilized. Incident ions remove surface material by a combination of momentum transfer (IBE) and / or chemical reactivity (RIBE). At low (< 15) angles of incidence to the surface, ions tend to level or “planarize” rather than etch. At higher angles (>15), the incident ions tend to raise topography or “decorate” microstructural features. RIE requires a plasma to be formed from individual or mixed gases of CF4, CHF3, Cl2, and O2, yielding reactive fluorine, chlorine and oxygen ions. Plasma chemistries are often produced that are selective to one or more components (Si, SiO2, Al) of a microelectronic material.[5] The plasma chemistry is adjustable by independent control of the gas flow rates and chamber pressure. The energy of ionization is supplied by a shaped electrode driven by a RF power supply. The sample is both electrically grounded to promote the flow of positively charged, reactive ions to its surface and rotated to effect the desired surface characteristics. IBSC requires “line of sight” IBE of targets (C, Cr, Pt, W) to transfer the materials to a sample surface. Tilt / rotation of a sample promotes the deposition of thin (< 2 nm), structurally amorphous and uniform coatings that are preferred for high resolution FESEM.

Abstract Standard analytical practice in the semiconductor industry depends on fast, efficient and reliable sample preparation prior to FESEM. “In lens” imaging technology and orientation mapping (EBSD) demand sample surfaces free of physical damage and residual contamination. An integrated preparation tool has been developed that incorporates the functionality necessary for argon – oxygen plasma cleaning, ion beam etching (IBE), reactive ion beam etching (RIBE), reactive ion etching (RIE), and ion beam sputter coating (IBSC). Control, monitoring and sequential automation of the processes is accomplished through a novel combination of software and hardware. FESEM results for Al and Cu based microelectronic materials will be discussed, as well as EBSD results for bulk metals. Improvements in throughput and subsequent materials characterization will be demonstrated.