Theoretical computation of recombination waves in Au-doped Si is reconsidered introducing new expressions of the carrier lifetimes, deduced from a linearized theory of the generation-recombination process kinetics. The comparison with previous theoretical and experimental papers is given. The role of the temperature and dc electric field on the instability condition is examined.
G. Parodi合作论文数1
Sandro Ridella合作论文数DITEN, University of Genova1Nadir M. Maraldi合作论文数1
Alberto Martelli合作论文数Dipartimento di Informatica, Università degli Studi di Torino1R. Viviani合作论文数1Silvano Capitani合作论文数1
Francesco Beltrame合作论文数Department of Communications;Computer and System Sciences;University of Genoa;Department of Communications, University of Genoa1Vincenzo Trefiletti合作论文数1Pia Carlo合作论文数1Barbara Cavazza合作论文数1Massimo Grattarola合作论文数1Renata Finollo合作论文数1Eligio Patrone合作论文数1Giovanni Brambilla合作论文数1
Claudio Nicolini合作论文数Nanoworld Institute, University of Genova1
