Direct band gap strained germanium (Ge) is one of the promising materials that have been used in various applications in the last decades, with elements such as Sn, As, and Pb being used to modulate the Ge band gap.

Graphene oxide (GO) was synthesized through a modified Hummers method at oxidation temperatures of 75, 95, and 115 °C to investigate temperature-induced structural, electrical, and electrochemical evolution. X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and UV–Vis spectroscopy were used to characterize the synthesized GO samples. XRD results show that increasing oxidation temperature decreases crystal size from 10 nm to 8.01 nm and causes interlayer contraction. SEM analysis reveals a decrease in oxygen-containing functional groups with increasing temperature, accompanied by partial recovery of sp2 carbon domains, as confirmed by zeta potential results. The Zeta potential measurements indicate a decrease in potential from -38 mV to -31 mV with increasing oxidation temperature. UV–Vis spectroscopy analysis shows that the highest oxidation temperature exhibits a lower band gap (3.6eV) and a high Urbach energy (625meV). Hall Effect measurements confirmed enhanced carrier concentration, mobility, and electrical conductivity, indicating improved electronic transport. The Tafel results indicate that the highest oxidation temperature exhibits greater kinetics compared to the lower temperatures. Electrochemical impedance spectroscopy shows reduced charge-transfer resistance, and the relaxation time constant decreased from 0.842 ms to 0.671 ms, whereas cyclic voltammetry reveals a significant decrease in specific capacitance from 668 to 328 F/g due to the loss of redox-active oxygen sites and restricted ion accessibility. Charge storage remains predominantly diffusion-controlled, highlighting a clear trade-off between electronic transport and capacitive performance. The stability test showed an increase in capacitance retention from 84% (75 °C) to 93% (115 °C) after 6000 cycles. GCD test reveals that the GO3 sample has the highest specific capacitance (385 F/g) at a current density of 1A/g.

In the current study, zinc oxide nanorod (ZnO NR) thin films were successfully synthesized using a simple and cost-effective hydrothermal method at various growth temperatures (100 °C, 110 °C, 120 °C, 130 °C, and 140 °C). The properties of the fabricated ZnO NR thin films were investigated using various analytical techniques, including X-ray diffraction (XRD), Mott-Schottky (MS) analysis, electrochemical impedance spectroscopy (EIS), photocurrent (PC) measurements, dark current-voltage (I-V) analysis,, photoluminescence (PL) spectroscopy, scanning electron microscopy (SEM), Raman spectroscopy, transmission electron microscopy (TEM), and UV-vis spectroscopy. XRD analysis confirmed that the ZnO NRs possess a hexagonal polycrystalline structure with a preferred orientation along the (002) plane. The average crystal size increased with rising growth temperature, which enhances the electron transport properties. SEM analysis revealed that the ZnO NRs grown at different temperatures exhibited various orientations,, forming flower-like structures while maintaining hexagonal morphology. PL analysis revealed two distinct emission peaks in the ZnO NR spectra, confirming their optical activity. Raman spectroscopy further confirmed the formation of ZnO nanorods with a wurtzite crystal structure. UV-vis spectroscopy showed an optical absorption edge at 382 nm, corresponding to the material's band gap energy. Photocurrent (PC) measurements, electrochemical impedance spectroscopy (EIS), and Mott-Schottky (MS) analysis demonstrated enhanced electrical properties and confirmed the N-type conductivity of the ZnO NRs. Samples fabricated at 140 °C exhibited the highest carrier concentration (3.58 × 10²¹ cm⁻³) and the most negative flat-band potential (-0.95 V), indicating superior electronic performance. Our findings suggest that ZnO NRs thin films synthesized at 140 °C are promising candidates for optoelectronic applications, particularly as electron transport layers (ETLs) in solar cell devices.

Multiple-exciton generation via quantum cutting (QC) in ytterbium (Yb)-doped CsPbCl₃ nanocrystals (NCs) offers a pathway to enhance photovoltaic (PV) performance beyond the Shockley-Queisser limit. This study identifies Yb ion-site occupancy as the critical factor governing QC efficiency. By employing a sequential thermodynamic temperature-gradient synthesis, we optimized the distribution of Yb ions between interstitial (YbI) and lead-substituted (YbS) lattice sites. Lower synthesis temperatures favor YbS occupancy, reducing QC efficiency, while higher temperatures promote YbI occupancy, achieving a photoluminescence quantum yield of 170% at a power density of ∼0.08 mW/cm2. Integrating the optimized NC film with a crystalline silicon (c-Si) PV device yielded a certified power conversion efficiency of 26.00% (vs. reference 25.58%) and an external quantum efficiency of 117.2% ± 2.9% at 380 nm. This work elucidates the QC mechanism in NCs and demonstrates a viable strategy to surpass 100% EQE, advancing PV technologies toward higher efficiency.

Abstract A crystal, highly efficient, environmentally friendly, and low-cost metal-organic framework iron–aluminium-based metal–organic framework composed of Fe³⁺/Al³⁺ nodes coordinated with 1,3,5-benzenetricarboxylate (BTC) linkers (Fe–Al@BTC) was synthesized by the hydrothermal method. Photoelectrochemical properties of MOF were evaluated employing Mott-Schottky and EIS Measurements. Flat band potential and carrier density were 0.76 V and 1.3 × 1020 cm− 3. The measurements confirmed that Fe-Al@BTC is an n-type semiconductor. It exhibited promising electrochemical properties where charge transfer resistance and double-layer capacitance were observed at the electrode/electrolyte interface. Moreover, at a scan rate of 10 mV/s, the specific capacitance of Fe-Al@BTC MOF from cyclic voltammetry is 339.24 F/g. The structure BTC and MOF were optimized by DFT/ B3LYP 6-31G (d, p) to clarify their physical descriptor and identify their HOMO-LUMO band gap, which was more correlated with Physical and biological results. Furthermore, the antibacterial activity of Fe-Al @BTC was evaluated by optical density measurements and the cut plug method. It showed remarkable inhibition of bacterial growth by 100% at a concentration of 600 mg\L. Moreover, a molecular docking study of Fe-Al @BTC was performed to understand molecular interaction with Bacillus subtilis ATCC 6633 protein and its reactivity. Our results indicate that Fe-Al @BTC is a promising candidate for energy and environmental applications.

Copper-zinc tin sulfide (Cu2ZnSnS4 or CZTS), a quaternary semiconductor with superior optoelectronic properties, has emerged as a promising absorber material for thin-film photovoltaic applications. In this study, a highefficiency CZTS solar cell was numerically investigated using SCAPS-1D, emphasizing the roles of Cu2O as a hole transport layer (HTL) and Cd0.4Zn0.6S as a tunable buffer layer. The simulated device structure-ITO/AZO/ Cd0.4Zn0.6S /CZTS/Cu2O/Mo-was systematically optimized by varying the thickness and bandgap of each functional layer. The best performance was achieved with a 0.01 mu m-thick Cu2O HTL (2.2 eV bandgap) and a 0.01 mu m-thick Cd0.4Zn0.6S buffer (2.98 eV bandgap), enabling efficient hole extraction, high transparency, and suppressed interfacial recombination. Under these optimized conditions, the device exhibited an open-circuit voltage (Voc) of 0.867 V, short-circuit current density (Jsc) of 43.424 mA/cm2, Fill Factor (FF) of 82.23 %, and a remarkable power conversion efficiency (PCE) of 31.18 %. Additionally, the influence of operating temperature on solar cell performance was evaluated in the range of 280 K to 360 K. The results revealed a notable reduction in the PCE, decreasing from 32.19 % to 27.57 %. This degradation in efficiency is primarily attributed to the temperature-induced increase in reverse saturation current, which adversely impacts the Voc and overall device performance. The interface defect studies revealed severe performance degradation, with efficiency reduced to 21.75 % at a defect density of 1 x 1020 cm-3 at the CZTS/Cd0.4Zn0.6S junction. These findings underscore the critical importance of HTL/buffer layer engineering, interface defect control, and thermal management in advancing high-efficiency, thermally stable, and environmentally benign CZTS-based solar cells.

This research reports the preparation of high-entropy spinel oxide (CrMnFeCoNi)3O4 employing a sol-gel autocombustion approach and investigates the impact of annealing temperature (600, 700, and 800 degrees C) on its structural, electrical, and electrochemical properties. XRD analysis confirms the successful formation of a single, well-defined spinel phase with progressively enhanced crystallinity and increased crystallite size at higher annealing temperatures. The SEM analysis revealed that the grain size increases with increasing annealing temperature, indicating enhanced grain growth and improved crystallinity. Elemental mapping confirmed a homogeneous cation distribution throughout the material, suggesting uniform mixing at the nanoscale. EDX results confirmed the material's high-entropy nature, with a near-equimolar elemental composition. Furthermore, XPS analysis revealed the coexistence of divalent and trivalent metal oxidation states, indicating mixed valence chemistry and charge compensation within the structure. The sample annealed at the highest temperature exhibited a specific surface area of 5.48 m2/g. Dielectric and AC conductivity measurements reveal a transition from interfacial polarization at low frequencies to intrinsic dipolar relaxation at high frequencies, with the S800 sample exhibiting the highest permittivity, lowest losses, and the most efficient charge-transport behavior. Hall and Mott-Schottky analyses indicate a dominant n-type character, accompanied by a notable increase in carrier concentration and mobility with increasing annealing temperature in the Hall Effect results. Electrochemical impedance spectroscopy further reveals a noticeable decrease in charge-transfer resistance and faster ion diffusion for the highly crystalline samples. Cyclic voltammetry demonstrates enhanced pseudocapacitive behavior: S800 delivers the largest redox current and specific capacitance (496 F/g) and excellent stability, with 90.4% retention after 1000 cycles. Zeta potential measurements confirmed the enhancement of the nanoparticles' colloidal stability, while Tafel analysis revealed favorable electrocatalytic kinetics. Overall, the results highlight a strong structure-property correlation in high-entropy spinels and identify the 800 degrees C-annealed sample as the most promising electrode candidate for supercapacitor applications because of its superior conductivity, improved charge-storage kinetics, and enhanced electrochemical reversibility.

This paper presents the design and simulation of a high-efficiency, environmentally friendly thin-film solar cell based on a Cu2MnSnSe4 (CMTSe) absorber integrated with a SnS2 buffer layer, a MoSe2 interfacial layer, and an Al-doped ZnO (AZO) window layer. The substitution of conventional toxic CdS or Cd0.4Zn0.6S buffer layers with SnS2 yields superior lattice matching, higher optical transparency, and reduced interface recombination, thereby enhancing short-circuit current density (Jsc) and overall device performance. Unlike previous studies that treated MoSe2 as an unintentional byproduct, this work deliberately incorporates MoSe2 as an engineered interfacial layer to improve open-circuit voltage (Voc), fill factor (FF), and efficiency by passivating defects and optimizing band alignment. The simulated device achieves a remarkable efficiency of 33.6%, significantly outperforming earlier CMTSe-based structures (25%–28%). A comprehensive parametric study was conducted to examine the effects of layer thickness, band gap, doping concentration, and defect density on device performance. The results reveal that an optimized MoSe2 thickness and moderate acceptor concentration substantially enhance carrier transport while minimizing recombination losses. Although variations in SnS2 buffer thickness show limited influence on Jsc, slightly thicker layers improve current extraction. Conversely, the AZO window thickness strongly affects Jsc, with thinner layers enabling higher photon transmission. External Quantum Efficiency (EQE) analysis confirms that the SnS2/MoSe2 interface combination facilitates superior photocarrier generation and collection compared to conventional configurations. Overall, this study demonstrates the synergistic role of SnS2 and MoSe2 in boosting the photovoltaic performance of CMTSe-based devices and provides valuable design insights for developing safer, cost-effective, and high-efficiency thin-film solar cells.

This work provides an in-depth theoretical investigation of a perovskite solar cell structured as FTO/CdS/FASnI3/ Sb2S3/Au, analyzed by the SCAPS-1D software. The study focuses on optimizing photovoltaic performance by examining the effects of thickness of layer, band gap of materials, carrier concentration, and temperature on key device parameters. Formamidinium tin triiodide (FASnI3) serves as the primary light-absorbing layer which has direct band gap equal to 1.45 eV, high absorption co-efficient, and non-toxic composition making it an excellent alternative to lead-based perovskites. Cadmium Sulfide (CdS) acts as ETL, while antimony sulfide (Sb2S3) acts as HTL because they guarantee an improvement in charge-carrier separation and good band alignment. The theoretical results obtained indicate that with the optimized configuration of a 1.5-mu m FASnI3 thickness, 0.04-mu m CdS thickness, and 1-mu m Sb2S3 thickness, the maximum PCE reaches 37.62%, Voc equals 1.2107 V, Jsc is 34.56 mA/cm2, and FF is 89.9% under typical AM 1.5G illumination. Moreover, from the results, increasing operating temperature decreases Voc, FF, and the whole efficiency due to increased recombination. These findings confirm that the proposed FTO/CdS/FASnI3/Sb2S3 device structure is a highly efficient, stable, and environmentally friendly attractive option for future lead-free perovskite photovoltaic technologies.

A hydrothermal method was used to fabricate kesterite CZTS nanoparticles with tetragonal crystalline structure at different growth temperatures. X-ray diffraction, scanning electron microscope (SEM) coupled with energydispersive X-ray spectroscopy (EDX), Raman spectroscopy, UV-Vis, Electrochemical impedance spectroscopy (EIS), Mott-Schottky, cyclic voltammetry (CV), and chronoamperometry measurements were employed to investigate the structural, morphological, compositional, optical, and electrochemical properties of the CZTS samples. XRD findings confirmed the formation of single-phase kesterite CZTS without any secondary phases which was further supported by Raman spectra. SEM analysis revealed significant temperature-dependent variations in surface morphology. EDX analysis verified the elemental composition and high phase purity of the synthesized CZTS NPs. The absorption spectrum exhibited a dominant peak in the visible range, and the estimated band gap was discovered to decline from 1.61 to 1.49 eV as the growth temperature increased. Mott-Schottky analysis indicated p-type conductivity with an improvement in carrier concentration from 4.1 & times; 10 1 8 to 5.2 & times; 10 1 8 cm-3 as the growth temperature increased from 170 to 260 degrees C. EIS and CV studies demonstrated a temperature-dependent improvement in electrochemical performance evidenced by reduced charge transfer resistance and increased specific capacitance from 591 to 745.5 F g-1 . In addition, the CZTS electrodes exhibited excellent electrochemical stability with retention of approximately 97 % from its initial specific capacitance after 2000 consecutive charge-discharge cycles, highlighting the suitability of CZTS for supercapacitor applications. The chronoamperometry analysis showed an enhancement in the measured current and sensitivity towards glucose from 0.11 to 0.35 mA and 0.23-0.68 mA mM-1 cm-2 as the temperature increases from 170 to 260 degrees C, respectively. These results demonstrate that CZTS nanoparticles are promising multifunctional nanomaterials for energy storage particularly supercapacitor devices as well as biosensor applications.

In this work, Zn-Co@BTC was synthesized under environmentally friendly, economical, and green conditions. It was prepared by the solvothermal method using zinc nitrate hexahydrate and cobalt nitrate hexahydrate as the metals, with benzene-1,3,5-tricarboxylate (BTC) as the ligand. The formation of Zn-Co@BTC MOF was confirmed by Ultraviolet-Visible spectroscopy (UV-Vis), X-ray diffraction, Fourier transform infrared, thermogravimetric analysis, Raman spectroscopy, X-ray Photoelectron Spectroscopy, Brunauer-Emmett-Teller surface area analysis, scanning electron microscopy, and Transmission electron microscopy. It exhibited high thermal stability, a large surface area, and strong antibacterial activity. The antibacterial activity was evaluated against the Bacillus cereus strain identified by 16S rRNA gene sequencing using optical density measurements and the cut plug method. The results showed remarkable antibacterial activity, achieving near-complete bacterial growth inhibition (99.9%) at 600 mg/L and complete inhibition (100%) at a concentration of 800 mg/L. These findings support the potential use of Zn-Co@BTC MOF as an antibacterial agent in biomedical applications.

Here we present the growth of Bi2O3 nanoparticles by solution combustion technique then investigation effect of calcination temperature to determine ideal temperature for the highest antibacterial activity and biosensor applications. Many characterization methods were used to investigate characteristics of the fabricated samples. XRD displayed that beta- and alpha-Bi2O3 NPs have been formed with tetragonal and monoclinic crystal structure with particle size increases from 21 to 66 nm with rising of calcination temperature. XPS data displayed existence of Bi3+ and oxygen vacancies in the fabricated samples. Raman Spectra showed vibration modes of alpha-Bi2O3 and beta-Bi2O3 NPs. SEM images proved that particles agglomerate for - and alpha-Bi2O3 NPs with increasing calcination temperatures. TEM images displayed that average particle size was found to be 25 and 72 nm for samples calcined at 200 and 600 degrees C, respectively. UV-Vis data showed characteristic peaks of beta- and alpha-Bi2O3 NPs with gap energy decreasing from 2.95 to 2.74 eV. The carrier concentration for the fabricated samples decreased from 5.6 & times; 10(19) cm(-3) to 2.4 & times; 10(19) cm(-3) rendering to Mott-Schottky measurements. PL, PALS, EIS and the Mott-Schottky results show that the samples calcined at 200 and 600 degrees C have the highest oxygen vacancies/defects which enhances the ROS generation which leads to the death of gram-negative bacteria, E. coli. The chronoamperometry curves showed the fast response of fabricated electrodes with sensitivity of 0.11 and 0.02 mu A mM(-1) cm(-2) for the Bi2O3 NPs calcined at 200 and 600 degrees C, respectively. The synthesized Bi2O3 nanoparticles exhibit moderate cytotoxicity in human WI-38 cells, with a CC50 value of approximately 309 mu g/ml. This indicates that they maintain high cell viability at low and intermediate concentrations, while a significant decrease in survival rates is observed at high doses (>250 mu g/ml). Our results displayed the effectiveness of an alternative antibacterial agent (Bi2O3) that can inhibit the growth of bacterial cells as well as is promising candidate for biomedical and biosensor applications.

In this investigation, the effects of cobalt doping with various concentrations of Co2+ ions (0, 0.1, 0.3, 0.5, 0.7 M) on the physical and photoelectrochemical properties of TiO2 were examined using an economical hydrothermal process. Properties of the samples were analyzed using XRD, Raman, SEM, UV-Vis, PL, photocurrent, MottSchottky, and EIS techniques. XRD patterns indicate that Co-doped TiO2 films were found to have a rutile phase, with crystallite sizes ranging from 16.82 to 23.52 nm. Raman spectroscopy showed peaks at 144, 443, and 609 cm- 1, demonstrating the formation of the rutile phase of TiO2. SEM images revealed that TiO2 NRs were uniformly formed in a tetragonal structure, and the grain size increased with higher doping levels. In the visible spectrum. Photoluminescence (PL) measurements showed two significant emission peaks at 520 and 700 nm, with reduced strength due to doping. UV-Vis results indicated that the optical absorption edge of the films ranging 386-417 nm, and the estimated band gap (Eg) reduced from 3.21 to 2.89 eV with increasing doping levels. The photocurrent (PC) measurements revealed that the films produced behave as n-type semiconductors. Mott-Schottky results indicated an enhancement in the flat band potential and donor density increased as the dopant concentration increased from -0.47 to -0.72 V and 1.55 x 1018 to 6.15 x 1018 cm-3, respectively. Additionally, EIS results indicate a reduced in the resistance of charge transfer (RCT) for doped samples compare to pure samples. This is due to the lattice distortion resulting from Cobalt doping, which enhances the efficiency of charge transfer. Our results show that Co-doped TiO2 films are viable options for biosensors, supercapacitors, and photovoltaic applications.

Hypochlorite ion (ClO-) sensors have gained significant attention with the growing need for environmental and water quality monitoring. This work reports the hydrothermal synthesis of heteroatom-doped carbon quantum dots (CQDs): silicon, nitrogen, and phosphorus tri-doped CQDs (Si, N, P-CQDs) and nitrogen and phosphorus bi-doped CQDs (N, P-CQDs). Silicon incorporation enhanced fluorescence quantum yield from 6.4% to 18.24% and triggered synergistic electronic effects that fundamentally improved sensing performance. These nanomaterials were investigated as multimodal sensing platforms using fluorometry, colorimetry, and differential pulse voltammetry (DPV). Si, N, P-CQDs demonstrated a superior response toward ClO- with remarkably low detection limits of 0.79 nM (fluorometry), 1.44 nM (colorimetry), and 1.70 nM (DPV) with linear ranges of 0.1-1.4 mu M (fluorometry), 0.1-1.3 mu M (colorimetry), and 0.1-0.9 mu M (DPV), compared to N, P-CQDs, which showed detection limits of 2.54 nM, 3.84 nM, and 4.10 nM with linear ranges of 0.1-0.9 mu M for all three methods, respectively. Analytical performance was validated across diverse water matrices in terms of sensitivity, selectivity, precision (relative standard deviation < 4%), and accuracy (recovery: 93.3-103.7%), confirming assay reliability. A paper-strip sensor using our CQDs was developed for quick visual detection of ClO- mimicking practical applications.

In this work, Cr2O3 NPs was synthesized using co-precipitation method and calcined at different temperatures from 300 ℃ to 800 ℃ to investigate the impact of calcination temperature on the properties of Cr2O3 NPs and hence employed in sensing applications. The structural characteristics via XRD and Raman show that as the calcination temperature increase the crystallite size of Cr2O3 NPs increase from 23.54 nm at 500 ℃ to 32.5 nm at 800 ℃ while the samples calcined at 300 ℃ and 400 ℃ are not formed. The morphological properties were shown through scanning electron microscope (SEM) and transmission electron microscope (TEM) where SEM shows surface with spherical grains for four samples and TEM investigated that as the calcinating temperature increases the density of agglomeration reduce and the particles become more defined and distributed. The optical characteristics were studied using photoluminescence (PL) and UV-Vis Reflectance. Tauc plot form UV-Vis Reflectance demonstrating a variation in the band gap from 3.44 eV to 3.26 eV at temperatures of 500 ℃ and 800 ℃ respectively. PL data demonstrated two emission peaks at 523 and 710 nm relating to the transition involving the Cr+6 and Cr+3 ions, respectively with a variation in intensity of peaks from lower intensity for sample-800 (S800) and highest intensity for 500. Electrochemical properties were revealed using electrochemical impedance spectroscope (EIS) and mott-Schottky analysis. Mott–Schottky showed that all samples are p-type semiconductors with acceptors’ density and flat-band potential changed from 2.7 × 1018–7 × 1017 cm−3 and 0.44 V to 0.38 V at 500 ℃ and 800 ℃ respectively. EIS show that RCT and RS changes from 287.32 Ω to 1386.8 Ω and from 7.50 Ω to 36.81 Ω at 500 ℃ and 800 ℃ respectively. The samples were used for detection of glucose showing highest sensitivity of 1.9 μA·mM⁻¹ ·cm⁻² and the lower limit of detection (LOD) of 0.85 mM for the sample calcined at 800 ℃.

Temperature-dependent photoluminescence (TDPL) provides powerful insight into the optical features of semiconductors. In this work, we investigate the impact of solution pH (9-13) on structural, morphological, and photoluminescence (PL) properties of Cu2O micrograins, with a particular focus on how these PL changes are obvious at low temperatures (14 K - 290 K). X-ray diffraction and scanning electron microscopy results reveal a pH-induced transition in preferred orientation from (200) to (111) facets, accompanied with morphological evolution from small to large micrograins. TDPL measurements uncover distinct recombination mechanisms; besides the near-band excitonic transitions of Cu2O, two strong emission bands related to relaxed excitons at oxygen and copper vacancies are noticed. At 14 K, the pH 9 sample displays a broad PL emission centered at 748 nm, attributed to oxygen vacancies. In contrast, the pH 13 sample displays two distinct peaks at 680 nm and 849 nm, corresponding to oxygen and copper vacancies, respectively. These defect-related emissions are absent in the room-temperature PL spectra. Furthermore, the activation energies (Ea) of these vacancies, determined using the Arrhenius model, are 29.9 meV for oxygen vacancies in the pH 9 sample, and 19.2 meV (oxygen vacancies) and 39.4 meV (copper vacancies) for the pH 13 sample. These results of correlation thermal PL behavior with structural modulation highlight an effective strategy for tuning the defects in Cu2O and underscore the value of TDPL in resolving emission pathways relevant to tunable optoelectronic applications.

The motivation for this work was to find the structure parameters of 80TeO2 - (20-x) WO3 - x Sm2O3, 0 <= x <= 5mol% (TWSm), and 80TeO2 - (20-x) WO3 - x Yb2O3, 0 <= x <= 5 mol% (TWYb). Radial distribution function (RDF) and Gaussian fitting of the (RDF) were denoted as N4(IR) and N4(X-ray), respectively, have been achieved. We have successfully deconvolved Raman spectra of the two glass systems. The Te-Te, O-O, X-X (X = Sm & Yb), Te-O, WO, and X-O (X = Sm & Yb) bond lengths and the fractions of tellurium atoms coordinated by four O-atoms were derived. Moreover, theoretical bulk modulus (Kbc), (nb), number of bonds per unit volume, Poisson's ratio (sigma), and stretching force constant (F) have been found. Finally, average atomic ring diameter (& ell;), cross-link density (nc), logarithm of (Ke), (Vm), and power (alpha) of the two glass systems have been calculated for every composition in the two-glass series.

This study investigates how bath temperature influences the properties of CuO thin films grown on FTO substrates using the electrochemical deposition method. CuO films were fabricated at bath temperatures ranging from 40 degrees C to 80 degrees C under a constant voltage of 0.5 V, using a bath solution containing copper sulfate, tartaric acid, and sodium hydroxide to maintain pH. CuO films were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, UV-Vis spectroscopy, photoluminescence (PL) spectroscopy, photocurrent measurements, Mott-Schottky (MS) measurements, and electrochemical impedance spectroscopy (EIS). XRD analysis definitively verifies the presence of a monoclinic structure in the CuO films, exhibiting a dominant orientation along the (200) plane. Raman analysis identified shifts in characteristic CuO vibrational modes at 270 cm-1, 317 cm-1, and 605 cm-1, reflecting changes in crystallographic structure. SEM revealed that particle size varied significantly with bath deposition temperature increased. UV-Vis spectra showed a systematic decrease in the optical bandgap from 1.67 eV to 1.39 eV with increasing temperature, attributed to improved crystallinity and reduced defect states. PL spectra of CuO thin films indicated two distinct photoluminescence maxima at about 465 nm and 517 nm with difference in the intensity for all samples due to changes in defect density and crystallinity. Photocurrent measurements and Mott-Schottky analyses demonstrated that the CuO films behave as p-type semiconductor, and with increasing the bath temperature the acceptor carrier increased. EIS analyses demonstrated improvements in electrochemical properties, with the flat band potential and charge transfer resistance showing significant temperature dependence. The results indicate that deposition temperature critically affects the structural, optical, and electrochemical performance of CuO thin films, providing insights for optimizing their application in optoelectronic devices and energy systems.

In this study, two distinct hydroxyapatite nanoparticle (HAp) shapes—nanospheres and nanorods—were synthesized and evaluated for their influence on cytotoxicity and photocatalysis using MG63 osteosarcoma cells. The standard chemical precipitation process was used to create the hydroxyapatite nanospheres, while polyvinyl alcohol was used as a capping agent to create the nanorod forms. The characteristic features of the fabricated hydroxyapatite nanoparticles (HAp) were examined with X-ray diffraction (XRD) analysis, Raman spectroscopy, scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR), and photoluminescence (PL). Also, high-resolution transmission electron microscopy (TEM) images and positron annihilation lifetime spectroscopy (PALS) were used to understand the relationship between the defects in hydroxyapatite (HAp) samples and the photodegradation of the MB dye. The interfacial charge-transfer behavior for each sample in an electrolyte was characterized by Mott–Schottky and electrochemical impedance. Also, the carrier density and conductivity of the manufactured materials and lattice structures were observed in two shapes, confirming the crystalline nature of the nanoparticles. To assess cytotoxicity, the 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) assay was performed using the osteosarcoma cell line (MG63). Nanorod particles exhibited higher cytotoxicity than nanospheres, as the application of nanotechnology starts to be an effective tool in cancer treatment. The outcomes of the current study may assist in the shape design of hydroxyapatite nanoparticles for therapeutic applications such as drug delivery vehicles in nanomedicine. It highlights the strong correlation between the electrochemical impedance and the cytotoxicity of the hydroxyapatite (HAp) samples, elucidating the role of charge carriers in cytotoxicity and photocatalytic degradation, initiating the redox reaction which releases the toxic reactive species selectively within osteosarcoma cells, resulting in the destruction of cancer cells while sparing normal cells, and demonstrating how physical and electrical characteristics impact a range of applications.

Many people lose their life due to diabetes each year as it is one of the most prevalent chronic illnesses, so that nanomaterials such Bi2O3 could employed in the fabrication of electrodes for glucose detection. Low-cost coprecipitation method was used to synthesize pure and (1 %, 3 %, 5 %) Zn-doped Bi2O3 NPs. XRD, Raman, SEM, TEM, EDX, UV-Vis, PL, Mott Schottky, and EIS measurements were employed to examine the characteristics of the fabricated nanoparticles. The XRD data showed that pure and Zn-doped Bi2O3 NPs have a monoclinic structure with decreasing in crystallite size from 24 to 11 nm as Zn ion concentration rises. Raman spectra showed that Bi-O stretches are related to the broad peaks at higher frequency modes of 526, 442, and 312 cm- 1, while lattice vibrations are linked to the other sharp peaks at 91, 115, 147, 182, and 208 cm- 1. From SEM results, Zn ion concentrations affect the size of agglomerated particles and the surface appearance of all samples. TEM micrographs showed average particle size of 24 and 10 nm for pure and 5 % Zn -doped Bi2O3 NPs. UV-Vis spectra displayed strong absorption bands with band gap energy increasing from 2.86 to 2.89 eV with increasing Zn ion concentration. PL analysis showed that the intensity of the spectra reduced with the increase in Zn doping with blue-green emission bands concentrated at 525 nm. The EIS investigation presented that with increasing Zn ion content rises, the charge transfer resistance of all the manufactured samples lowers. Mott-Schottky measurements revealed that the donor density of pure and Zn-doped alpha Bi2O3 NPs increased from 9.3 x 1019 cm- 3 to 1.3 x 1020 cm- 3. The chronoamperometry analysis displayed that the measured current was found to rise from 0.02 to 0.04 mA with increasing glucose where the sensitivity of fabricated biosensor increased from 0.31 to 2.3 mu A mM- 1 cm- 2 with Zn doping process. Our outcomes show that Zn-doped Bi2O3 nanoparticles are promising candidates for biosensor applications.