A memory effect is observed when a nickel-zinc selenide–germanium structure is irradiated by light of different spectral composition. The effect is based on the recharging of trapping sites in a ZnSe layer both, by electrons and holes. The long-wave boundary, for the first process, is determined by the energy barrier Ni Fermi level-ZnSe conduction band bottom. For the second process it is the barrier Ni Fermi level–ZnSe valence band top. Their values, found by the procedure proposed earlier, are 1.07 and 1.27 eV, respectively. [Russian Text Ignored].

physica status solidi (a)Volume 98, Issue 2 p. K191-K195 Short Note Determination of Energy Barriers for the Photocharging of Trapping Sites Contained in ZnSe Layer of Ni-ZnSe-SiO2-Si Structure by Electrons and Holes O. K. Malinovskaya, O. K. Malinovskaya P.N. Lebedev Physical Institute, Academy of Sciences of the USSR, Moscow Search for more papers by this authorA. F. Plotnikov, A. F. Plotnikov P.N. Lebedev Physical Institute, Academy of Sciences of the USSR, Moscow Search for more papers by this authorV. A. Tolokonnikov, V. A. Tolokonnikov P.N. Lebedev Physical Institute, Academy of Sciences of the USSR, Moscow Search for more papers by this author O. K. Malinovskaya, O. K. Malinovskaya P.N. Lebedev Physical Institute, Academy of Sciences of the USSR, Moscow Search for more papers by this authorA. F. Plotnikov, A. F. Plotnikov P.N. Lebedev Physical Institute, Academy of Sciences of the USSR, Moscow Search for more papers by this authorV. A. Tolokonnikov, V. A. Tolokonnikov P.N. Lebedev Physical Institute, Academy of Sciences of the USSR, Moscow Search for more papers by this author First published: 16 December 1986 https://doi.org/10.1002/pssa.2210980260Citations: 1 Leninskii prospekt 53, 11 7924 Moscow, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 V. A. Tolokonnikov, Candidate's Thesis, Moscow 1983. 2 O. K. Malinovskaya, A. F. Plotnikov, and V. A. Tolokonnikov, to be published. 3 A. F. Plotnikov, V. A. Tolokonnikov, and V. E. Shubin, phys. stat. sol. (a) 50, 733 (1978). Citing Literature Volume98, Issue216 December 1986Pages K191-K195 ReferencesRelatedInformation

Measurements are made of spectral characteristics of photoemission currents in the anodic oxideindium antimonide system taking into account the charge state of the oxide traps. From the analysis of the curves obtained the values of the energy barrier semiconductor valence band-oxide conduction band and semiconductor conduction bands-oxide valence band are determined. They are 1.25 and 1.6 eV to an accuracy of 0.01 eV, respectively, including the spread between the samples. [Russian Text Ignored]