Hydrogen sulfide sensors are censoriously important for environmental monitoring, industrial safety, and biomedical applications due to the highly toxic and corrosive nature of H2S gas. We report indium sulfide (In2S3) flakes were grown via chemical vapor deposition (CVD) and functionalized with palladium (Pd) nanoparticles(NPs) to develop a high-performance chemiresistive H2S gas sensor. The pristine In2S3 flakes have a porous microstructure with abundance of active sites, however the addition of Pd NPs improves the gas sensing response through enhancing charge transfer interactions along with providing catalytic spillover sites. The Pd-functionalized In2S3 sensor demonstrated a increase in respone (1.4-fold) and selectivity towards H2S, attaining a sensing response of approximately 67.60% at 50 ppm concentration at 75 degrees C. The sensor demonstrated rapid kinetics with response and recovery times of 48 s and 260 s, respectively, and a remarkably low limit of detection of 59 ppb. Furthermore, the sensor confirmed high humidity tolerance up to 80% RH and excellent repeatability. Density functional theory calculations discovered an 8-fold increase in adsorption energy (-1.51 eV) and significant charge transfer (-0.086 e(-)) upon Pd decoration, correlating the electronic sensitization of the Schottky barrier to the observed ppb-level sensitivity. With the use of first-principles calculations that explain the underlying sensing process, this work presents a practical strategy to develop efficient H2S gas sensors through the use of CVD-grown sulfide semiconductors with decoration of noble metal NPs.

Cadmium (II) ions are highly toxic and pose serious health risks, including kidney damage, bone fragility, and potential carcinogenic effects. However, existing methods for detecting cadmium (Cd2+) ions face several challenges, such as operational complexity, high cost, and potential damage to samples, and interference from other metal ions. Herein, we present a simple and sustainable strategy for the synthesis of highly fluorescent carbon dots (CDs) derived from Tradescantia pallida. The as-prepared CDs exhibit a quantum yield of 19.2%, along with excellent water dispersibility, remarkable photostability, and strong tolerance to high ionic strength conditions. Owing to their ultrasensitive response toward Cd2+ ions, we developed a fluorescent nanoprobe capable of quantitative detection, achieving an excellent linear response range of 1-7 mu M, with a limit of detection of 0.21 nM. Spike-and-recovery experiments performed using real water samples from Bhartiye Coking Coal Limited, Dhanbad, and Bokaro Steel City, Bokaro, confirming the sensor's suitability for real-world applications, with recovery rates varying from 98.0 to 103.5%. Furthermore, the CDs were employed to fabricate invisible fluorescent ink on Whatman filter paper, highlighting their potential utility as a simple and effective security material for anti-counterfeiting and information encryption. Moreover, the CDs exhibited low cytotoxicity and nanoscale dimensions, making them well suited for cellular imaging in GL261 cells. Overall, this approach highlights the potential of these CDs as a promising platform for optical sensing, with potential applications in environmental monitoring, information security, and biomedical research.

Hydrogen sulfide sensors are censoriously important for environmental monitoring, industrial safety, and biomedical applications due to the highly toxic and corrosive nature of H2S gas. We report indium sulfide (In2S3) flakes were grown via chemical vapor deposition (CVD) and functionalized with palladium (Pd) nanoparticles(NPs) to develop a high-performance chemiresistive H2S gas sensor. The pristine In2S3flakes have a porous microstructure with abundance of active sites, however the addition of Pd NPs improves the gas sensing response through enhancing charge transfer interactions along with providing catalytic spillover sites. The Pd-functionalized In2S3sensor demonstrated a increase in respone (1.4-fold) and selectivity towards H2S, attaining a sensing response of approximately 67.60% at 50 ppm concentration at 75 °C. The sensor demonstrated rapid kinetics with response and recovery times of 48 s and 260 s, respectively, and a remarkably low limit of detection of 59 ppb. Furthermore, the sensor confirmed high humidity tolerance up to 80% RH and excellent repeatability. Density functional theory calculations discovered an 8-fold increase in adsorption energy (-1.51 eV) and significant charge transfer (-0.086 e-) upon Pd decoration, correlating the electronic sensitization of the Schottky barrier to the observed ppb-level sensitivity. With the use of first-principles calculations that explain the underlying sensing process, this work presents a practical strategy to develop efficient H2S gas sensors through the use of CVD-grown sulfide semiconductors with decoration of noble metal NPs.

Abstract Hydrogen sulfide sensors are censoriously important for environmental monitoring, industrial safety, and biomedical applications due to the highly toxic and corrosive nature of H 2 S gas. We report indium sulfide (In 2 S 3 ) flakes were grown via chemical vapor deposition (CVD) and functionalized with palladium (Pd) nanoparticles(NPs) to develop a high-performance chemiresistive H 2 S gas sensor. The pristine In 2 S 3 flakes have a porous microstructure with abundance of active sites, however the addition of Pd NPs improves the gas sensing response through enhancing charge transfer interactions along with providing catalytic spillover sites. The Pd-functionalized In 2 S 3 sensor demonstrated a increase in respone (1.4-fold) and selectivity towards H 2 S, attaining a sensing response of approximately 67.60% at 50 ppm concentration at 75 °C. The sensor demonstrated rapid kinetics with response and recovery times of 48 s and 260 s, respectively, and a remarkably low limit of detection of 59 ppb. Furthermore, the sensor confirmed high humidity tolerance up to 80% RH and excellent repeatability. Density functional theory calculations discovered an 8-fold increase in adsorption energy (−1.51 eV) and significant charge transfer (−0.086 e - ) upon Pd decoration, correlating the electronic sensitization of the Schottky barrier to the observed ppb-level sensitivity. With the use of first-principles calculations that explain the underlying sensing process, this work presents a practical strategy to develop efficient H 2 S gas sensors through the use of CVD-grown sulfide semiconductors with decoration of noble metal NPs.

0D/2D graphene quantum dot (GQD)-MXene heterostructures have recently emerged as a versatile class of luminescent hybrid nanomaterials that combine the quantum confinement-induced photoluminescence of zero-dimensional GQDs with the metallic conductivity, surface functionality, and two-dimensional architecture of MXene nanosheets. The synergistic integration of these components enables tunable emission behavior, efficient interfacial charge transfer, enhanced fluorescence response, and improved physicochemical stability. This review systematically discusses the fundamental photophysical mechanisms governing luminescence modulation, including surface-state emission, defect engineering, energy transfer pathways, and electronic coupling at the GQD-MXene interface. Controlled synthesis strategies and structural tunability are highlighted with emphasis on their influence on optical performance and sensing characteristics. Recent applications in fluorescence sensing, electrochemical biosensing, photothermal-assisted systems, and multifunctional energy devices are critically analyzed. Particular attention is given to dopamine detection, optical signal amplification, and structure-property relationships relevant to analytical performance. Finally, current challenges and future perspectives for developing next-generation luminescent GQD-MXene platforms for sensing, imaging, and integrated optoelectronic systems are outlined.

High-performance photodetectors (PDs) require compact design, low power consumption, and broadband operation. Single-layer WS2, though a promising 2D semiconductor, faces limitations in practical photodetection due to its atomic thickness and narrow spectral absorption. Here, we demonstrate a p-n heterostructure photodetector based on p-type CuGaO2 (CGO) functionalized n-type WS2, which significantly enhances UV detection capability. The synergistic effects of broadened optical absorption, interfacial charge transfer, and the built-in electric field at the CGO/WS2 junction enable efficient photocarrier generation and separation. Under 15 mu W/cm2 UV illumination and 5 V bias, the device achieves a responsivity of 3.5 A/W, detectivity of 5.86 x 1011 Jones, and external quantum efficiency of 1.2 x 103%, with noise equivalent power as low as 0.28 pW/(Hz)1/2. Furthermore, the heterostructure exhibits fast response times (rise/fall time 243/262 mu s), demonstrating its potential for high-sensitivity, low-light UV photodetection applications. These results demonstrate a straightforward yet effective approach to addressing the inherent limitations of 2D transition metal dichalcogenide photodetectors, providing a promising pathway for the development of broadband, UV-responsive, and energy-efficient photodetection technologies suitable for next-generation optoelectronic applications.

Zn-doped nickel ferrite nanoparticles (Ni1-xZnxFe2O4, x = 0.0, 0.01, and 0.03) were synthesised via the sol–gel method to investigate their structural properties and gas-sensing performance for acetone and isopropyl alcohol (IPA) at room temperature. The research team confirmed the successful synthesis of a pure cubic spinel structure using X-ray diffraction (XRD), which showed no secondary phases. Incorporating more zinc into the material reduced the crystallite size from 34 to 28 nm, as measured using the Modified Scherrer formula. Spinel formation was also validated by FTIR spectroscopy, which detected its characteristic vibrational bands. Furthermore, FESEM imaging showed the material consisted of uniformly distributed, spherical nanoparticles averaging 45 nm in size. The Vander Pauw technique confirmed the p-type semiconducting behavior of the samples. Gas-sensing studies were conducted for acetone and IPA at concentrations ranging from 1 to 200 ppm. The Ni0.99Zn0.01Fe2O4 sample exhibited the best sensing performance, with Rg/Ra ratios of 38.39 and 53.32 at 200 ppm for acetone and IPA, respectively. This superior performance was attributed to the optimal balance between the particle size, number of active sites, and porosity. The response and recovery times were concentration-dependent, with faster response times observed at lower concentrations. Excellent reproducibility was demonstrated over 15 cycles at 100 ppm for both gas types. Selectivity towards IPA over acetone was observed for all samples, with Ni0.99Zn0.01Fe2O4 showing the highest selectivity. The enhanced sensing performance of Zn-doped nickel ferrite nanoparticles, particularly Ni0.99Zn0.01Fe2O4, makes them promising candidates for the detection of acetone and IPA at room temperature, with potential applications in the early diagnosis of diabetes and kidney malfunction.

Metal oxide (MOX) gas sensors have gained significant attention for their widespread applications in industrial safety, environmental monitoring, and medical diagnostics. Recent advances in nanostructure engineering, particularly the development of one-dimensional (1D) MOX nanostructures including nanorods, nanowires, and nanotubes, have demonstrated remarkable enhancements in both sensitivity and room-temperature operation capabilities. Given the potential of 1D MOX in low-power sensors, this comprehensive review critically examines recent progress in 1D MOX nanostructures for room-temperature gas sensing applications. We systematically analyze various 1D architectures with practical potential, their synthesis methodologies, and structure-property relationships. The discussion extends to performance optimization strategies through compositional modification, surface engineering, and hybrid structure design. Furthermore, we present an in-depth evaluation of current challenges and future research directions in this emerging field, providing insights for the development of next-generation gas sensors.

Two-dimensional semiconducting materials have a wide range of applications in various fields due to their excellent properties and rich physics. Here, we report a detailed investigation of temperature-dependent Raman and photoluminescence measurements on vertically aligned 2H-SnS2 grown by the CVD method. Our results established the tunability of resonant Raman scattering with varying temperature, i.e., a crossover between resonance and non-resonance conditions for the current system. We also discussed the temperature as well as laser power dependence of the low-frequency asymmetric Raman mode, which is the interlayer shear mode. The temperature dependence of the intensity of the phonon modes also manifests the tunability of the resonant Raman scattering with temperature. Our temperature-dependent photoluminescence measurement shows the strong temperature dependence of the excitonic peaks and this is confirmed by the laser power dependence of the photoluminescence measurement at room temperature. Our investigation may help to design and fabricate devices based on vertically aligned 2H-SnS2 and other similar materials in the future.

The pervasive contamination of water sources by the toxic heavy metal arsenic presents a serious threat to human health and ecological systems. This raises the critical need for innovative detection platforms that can detect such contamination at low cost and as part of an onsite, distributed sensor network. In this context, we report an Arsenic (As3+) ion detection system that was fabricated using 2D SnS2 functionalized AlGaN/GaN high electron mobility transistor (HEMT). SnS2 layers were grown on the HEMT surface by chemical vapor deposition (CVD) which depicts hexagonal oriented nanosheets with crystal edges. The source and drain tri-metal contacts of Au/Cr/Al were fabricated by thermal evaporation using shadow mask. The sensor response was analyzed by measuring the variation in drain to source current of the device after introducing varied concentrations of As3+ ions, ranging from 1 ppb to 10 ppm. The observed sensitivity of the device is 0.42 mu A ppb(-1), with a detection limit of 0.90 ppb, and a response time of 3.2 s. Further, real-time data analysis was performed by the integration of the developed sensor with a customized printed circuit board connected with an Arduino Nano 33 Bluetooth Low Energy (BLE) module for data transmission. The concept of growing the SnS2 layer as a functionalizing layer by CVD results in quick response, good repeatability, and selectivity thereby eliminating the need for any additional reference electrode. Integration of the developed AlGaN/GaN HEMT sensor with Arduino Nano 33 BLE makes it an ideal candidate for portable heavy metal ion sensing device for onsite detection.

To protect the human environment, it is crucial to develop gas sensors that can effectively detect harmful gases at room temperature (RT). Even small traces of harmful gases like nitrogen dioxide (NO2) are challenging to detect at RT. To resolve this issue, the van der Waals (vdWs) junction of 2D transition metal dichalcogenides (TMDCs) and novel metal dichalcogenides (NMDCs) holds significant potential for sensing devices because of intriguing properties at the junction. This study presents an efficient NO2 gas sensor based on the vdW junction of PdS2 and MoS2 material working at RT (30 °C). Compared with pristine PdS2, the conductivity of the vdW junction improved significantly. The MoS2/PdS2 heterojunction sensor demonstrates remarkable response and selectivity toward NO2 at RT, which are inaccessible in PdS2 and MoS2 as individual sensors. The heterojunction sensor exhibits a relative response of ∼25% to 20 ppm of NO2 as compared to pristine PdS2 (∼7%) and pristine MoS2 (∼12%) sensors and has a significantly lower limit of detection (LOD) of 1.4 ppb. The sensor demonstrates reasonably good response and recovery time, excellent stability, and long-term durability. Also, density functional theory (DFT) calculations indicate that the p-p junction of MoS2/PdS2 provides more favorable sites for NO2 adsorption. This is due to the more negative adsorption energy, which improves charge transfer during the adsorption of NO2 and boosts the electrical response of the gas sensors. This study offers a prospective framework for the development of gas sensors based on 2D vdW heterojunctions, which demonstrate enhanced sensing performance at RT conditions.

To protect the human environment, it is crucial to develop gas sensors that can effectively detect harmful gases at room temperature (RT). Even small traces of harmful gases like nitrogen dioxide (NO2) are challenging to detect at RT. To resolve this issue, the van der Waals (vdWs) junction of 2D transition metal dichalcogenides (TMDCs) and novel metal dichalcogenides (NMDCs) holds significant potential for sensing devices because of intriguing properties at the junction. This study presents an efficient NO2 gas sensor based on the vdW junction of PdS2 and MoS2 material working at RT (30 °C). Compared with pristine PdS2, the conductivity of the vdW junction improved significantly. The MoS2/PdS2 heterojunction sensor demonstrates remarkable response and selectivity toward NO2 at RT, which are inaccessible in PdS2 and MoS2 as individual sensors. The heterojunction sensor exhibits a relative response of ∼25% to 20 ppm of NO2 as compared to pristine PdS2 (∼7%) and pristine MoS2 (∼12%) sensors and has a significantly lower limit of detection (LOD) of 1.4 ppb. The sensor demonstrates reasonably good response and recovery time, excellent stability, and long-term durability. Also, density functional theory (DFT) calculations indicate that the p-p junction of MoS2/PdS2 provides more favorable sites for NO2 adsorption. This is due to the more negative adsorption energy, which improves charge transfer during the adsorption of NO2 and boosts the electrical response of the gas sensors. This study offers a prospective framework for the development of gas sensors based on 2D vdW heterojunctions, which demonstrate enhanced sensing performance at RT conditions.

Heavy metal ion pollutants pose serious threats to human health and the environment due to their toxicity. An intuitive and convenient technique for detecting heavy metal ions is vital for qualitative monitoring and food safety. In this work, carbon dots (L-CDs) are prepared from a green source (lemon leaves) using a hydrothermal process, yielding a quantum of approximately 12.4%. These L-CDs exhibited excellent selectivity and sensitivity towards Hg2+ ions, with a limit of detection (LOD) of 0.23 nM and a wide linear range of 0-8 nM. This detection system may follow a dynamic quenching mechanism, characterized by fluorescent lifetime decay and zeta potential analysis. In addition, it was applied to detect Hg2+ ions in real water samples (coal water and industrial water), with recovery rates ranging from 98 to 102%, and relative standard deviations were 0.2-0.6%. Furthermore, the low cytotoxicity and small particle size of the L-CDs also make them suitable for use in antioxidant activity as well as HeLa cell imaging. Overall, this research represents a promising candidate in the field of environmental monitoring, food safety, and biomedical research.

Self‐powered broadband photodetectors utilizing 2D transition metal dichalcogenides (TMDs) are highly promising due to their remarkable light absorption capabilities and high sensitivity, making them suitable for applications such as military surveillance and wireless light detection systems. However, their performance is constrained by inadequate absorption, suboptimal charge carrier separation, and slow response times. In response to these limitations, the study fabricates a self‐powered photodetector employing a heterostructure composed of WS 2 nanoparticles anchored to CVD‐synthesized MoS 2 , operating within the visible to near‐infrared spectrum. The device demonstrates a responsivity of 283 mA W −1 and a detectivity 6.44 × 10 12 Jones, alongside an external quantum efficiency of 61% under exposure of 580 nm. In comparison to pristine MoS 2 , the MoS 2 ‐WS 2 photodetector exhibited approximately 12‐fold and 11‐fold enhancements in responsivity and detectivity, respectively, in addition to fast response time of ≈375 µs and 6 ms. Additionally, density functional theory (DFT) calculations are used to analyze the increase in dark current that is observed following WS₂ nanoparticle anchored on MoS₂. This investigation highlights the potential of 2D heterostructures in the development of high‐performance broadband photodetectors, which offer improved responsivity, stability, and self‐powered operation for advanced optoelectronic applications.

High‐performance photodetectors (PDs) require compact design, low power consumption, and broadband operation. Single‐layer WS 2 , though a promising 2D semiconductor, faces limitations in practical photodetection due to its atomic thickness and narrow spectral absorption. Here, we demonstrate a p–n heterostructure photodetector based on p‐type CuGaO 2 (CGO) functionalized n‐type WS 2 , which significantly enhances UV detection capability. The synergistic effects of broadened optical absorption, interfacial charge transfer, and the built‐in electric field at the CGO/WS 2 junction enable efficient photocarrier generation and separation. Under 15 μW/cm 2 UV illumination and 5 V bias, the device achieves a responsivity of 3.5 A/W, detectivity of 5.86 × 10 11 Jones, and external quantum efficiency of 1.2 × 10 3 %, with noise equivalent power as low as 0.28 pW/(Hz) 1/2 . Furthermore, the heterostructure exhibits fast response times (rise/fall time 243/262 μs), demonstrating its potential for high‐sensitivity, low‐light UV photodetection applications. These results demonstrate a straightforward yet effective approach to addressing the inherent limitations of 2D transition metal dichalcogenide photodetectors, providing a promising pathway for the development of broadband, UV‐responsive, and energy‐efficient photodetection technologies suitable for next‐generation optoelectronic applications.

Nitrogen dioxide (NO2) is considered to be a highly hazardous gas found in combustion engine exhaust, which causes several diseases at a young age. To detect NO2 at room temperature (RT), two-dimensional transition metal dichalcogenides play an essential role because of their greater surface-to-volume ratio. However, their higher limit of detection (LOD), slow response, and incomplete recovery kinetics hinder their use in efficient gas sensors. To mitigate these issues, we fabricate a facile and robust niobium (Nb)-doped molybdenum disulfide (MoS2) sensor using low-pressure chemical vapor deposition on a SiO2/Si substrate. Doping is confirmed through various characterization techniques. As compared to pristine MoS2, three batches of sensors are prepared with different weight percentages of Nb (8, 16, and 24%). Out of these, the 16% Nb-MoS2 sensor gives a greatly enhanced relative response of ∼30% for 500 ppb NO2 at 100 °C with an LOD of 489 ppt. Also, the sensor gives an ultrahigh response of ∼39% (18%) for 50 ppm (500 ppb) NO2 under 0.4 mW/cm2 intensity of UV light and exhibits a lower LOD of 117 ppt at RT. In addition, the 16% Nb-MoS2 sensor shows impressive selectivity toward NO2 against a range of reducing and oxidizing gases, along with exceptional long-term durability and stability. Based on density functional theory calculations, a comprehensive gas sensing mechanism is proposed. The calculations focus on identifying the favorable sites for NO2 adsorption on 16% Nb-MoS2 nanoflakes. This study offers a compelling and practical approach to boosting the efficiency of Nb-MoS2-based NO2 gas sensors.

The Internet of Things (IoT) has a crucial role in advancing various fields such as Industry 4.0, Big Data, and Machine-to-Machine technologies. All systems continuously gather information on various parameters such as temperature, speed, pressure, health data, environmental conditions, and consumption. Considering this, we've developed a novel fabrication method for H2S gas sensor prototypes. These sensors are based on noble metalfunctionalized on metal oxide semiconductor (MOS) chemiresistors. The fabrication process involved growing CuCrO2 sensing thin film on SiO2/Si substrates using the RF sputtering method. Subsequently, Pd nanoparticles, known for their excellent gas-sensing catalyst properties, were functionalized onto the CuCrO2 films using DC sputtering with varying sputtering times of 3, 6, 9, and 12 s. Nanorice morphology boosts gas absorption, capturing more target molecules. A 9 s Pd sputtering time greatly improved H2S sensing over other gases. CuCrO2 film with Pd showed the highest 72.3% response to 50 ppm H2S, detecting down to 0.5 ppm. These results were achieved at the optimal working temperature of 150 degrees C. After optimizing parameters, we transferred the technology to develop a sensor module for the prototype with IoT integration. The prototype sensor connects to NODEMCU-ESP8266 Wi-Fi, which links to a smartphone through a mobile hotspot.

The goal of current research in gas sensor technology is the development of a highly effective, small gas sensor that is able to operate at room temperature. There has been a surge in interest in 2D nanomaterials for the fabrication of high -performance gas sensor devices after graphene because of the exceptional physical, chemical, optical, and electrical properties of two-dimensional semiconductor nanomaterials. Among various 2D nanomaterials, we are focusing on transition metal dichalcogenides (TMDs) used for the fabrication of room temperature (RT) gas sensors because of their high surface area, large surface activity, extremely high carrier mobility, narrow bandgap, and high conductivity. Molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2), a well-researched TMDs, have drawn considerable attention across diverse domains for gas sensing materials at RT due to their intriguing two-dimensional layered structures and electrochemical features. The fabrication of chemiresistor sensors using MoS2 and MoSe2 has shown immense promise in meeting present-day demands, highlighting the remarkable technological advancements over the last several decades. It is anticipated that the strategic modification of the surface of MoS2 and MoSe2 nanomaterials using the decoration of nanoparticles will play a key role in the development of nanomaterials with unique chemical and physical properties as well as catalytic power, allowing them to boost the overall performance of gas sensors at RT. Herein, this review article provides an in-depth overview of the latest advancements made in MoS2 and MoSe2 nanomaterialbased chemiresistive gas sensors for the sensing of toxic gases at RT. Initially, we outline the method for synthesis and growth of MoS2 and MoSe2 nanomaterials, and the basic principles of sensing mechanisms are elucidated, relying on the charge transfer dynamics between gas species and MoS2 and MoSe2 nanomaterials. Furthermore, this article examines the current developments in the performance of gas sensors based on MoS2 and MoSe2 nanomaterials through the combination of nanocomposites, van der Waals heterostructures, doping, and decoration of nanoparticles, as well as their capabilities in sensing gases. Finally, this review offers insights into numerous emerging challenges and potential avenues for future research on gas sensor technologies utilising diverse 2D MoS2 and MoSe2 nanomaterials.

Ascorbic acid (AA), known as vitamin C, is a vital bioactive compound that plays a crucial role in several metabolic processes, including the synthesis of collagen and neurotransmitters, the removal of harmful free radicals, and the uptake of iron by cells in the human intestines. As a result, there is an absolute need for a highly selective, sensitive, and economically viable sensing platform for AA detection. Herein, we demonstrate a Pt-decorated MoS2 for efficient detection of an AA biosensor. MoS2 hollow rectangular structures were synthesized using an easy and inexpensive chemical vapor deposition approach to meet the increasing need for a reliable detection platform. The synthesized MoS2 hollow rectangular structures are characterized through field effect scanning electron microscopy (FESEM), energy-dispersive spectroscopy elemental mapping, Raman spectroscopy, and x-ray photoelectron spectroscopy. We fabricate a chemiresistive biosensor based on Pt-decorated MoS2 that measures AA with great precision and high sensitivity. The experiments were designed to evaluate the response of the Pt-decorated MoS2 biosensor in the presence and absence of AA, and selectivity was evaluated for a variety of biomolecules, and it was observed to be very selective towards AA. The Pt-MoS2 device had a higher response of 125% against 1 mM concentration of AA biomolecules, when compared to that of all other devices and 2.2 times higher than that of the pristine MoS2 device. The outcomes of this study demonstrate the efficacy of Pt-decorated MoS2 as a promising material for AA detection. This research contributes to the ongoing efforts to enhance our capabilities in monitoring and detecting AA, fostering advancements in environmental, biomedical, and industrial applications.

Therapeutic tools in the biomedical field are increasingly utilizing nanoparticles (NPs) with a small size and large surface area. Chitosan (CS), a biotic polymeric carbohydrate found in shellfish, is a promising carrier for these diagnostic systems due to its biocompatibility, low toxic effects, and diverse shapes. CS-NPs are therapeutic transporters with properties such as bionomical, pH, and heat sensitivity, increased homogeneity, and potential to pass through the brain. These nanomaterials can detect and cure pathological conditions using curative instruments. CS-NPs slow down the movement and growth of anti-inflammatory colonies while encouraging the growth of cells causing inflammation. They could provide active substances for treating various medical conditions, such as auto-immune deformities, hyperglycemia, hypersensitivity, and cancer. Scientific resources are dedicated to improving the efficacy of CS-NP active agent compositions. Recent discoveries highlight the medicinal implications of CS-NPs preparations for drug delivery in managing severe inflammatory aberrations.