This report shows for the first time the simultanous growth of InP/GaInAsP heterostructures having vertical and horizontal interfaces, demonstrated with multi (5) quantum well structures. The surface selective growth (SSG) in metalorganic MBE (MOMBE or CBE) enables on the one hand selective area epitaxy and on the other hand it allows to obtain vertical side walls at selectively grown structures. In addition SSG can provoke that the GaInAsP material composition is different on horizontal (100) and vertical (011) planes. This effect is utilized in order to allocate the results from focused photoluminescence measurements to the different types of superlattices. It is discussed that the proposed growth technique includes an attractive way to produce quantum wire systems besides the realization of vertical superlatices.

This study reports on the selective area growth of InP/GaInAsP layers and heterostructures by metaloganic molecular beam epitaxy (MOMBE). It was found that neither the growth rate nor the material composition for GaInAsP depends on the area where material growth takes place. This enables a flexible SiO2 mask to be designed independent of the aspect ratio. The use of slightly misoriented substrates allows the selective growth of planar structures having nearly perfectly vertical side walls even for 2 μm thick layers or narrow stripes to take place.

We report on the effect of substrate misorientation on the Gax-In1-xAsyP1-y growth in metalorganic molecular beam epitaxy (MOMBE). It was found that surface steps into [011BAR] direction play an important role in the Ga and P incorporation mechanism. particularly for materials composition with 0.1 < x < 0.4. From the presented data it can be concluded that the desorption processes during GaInAsP growth cannot be explained only by the diethylgallium desorption as observed during the GaAs growth. An additional phosphorus-gallium molecule interaction is affecting the element incorporation process. The results explain the earlier finding that substrate surfaces having steps into [011BAR] direction enhance the repeatability and large area uniformity in the GaInAsP growth using MOMBE.

We have studied the uniform growth of GaInAs(P) on InP using 5 inch substrate holders, designed for 2 inch single wafers to 3 × 2 inch multiwafer growth. The design of the holder, and thus the temperature gradient across the growth area shows a significant effect on the compositional distribution. Design rules and an automated surface temperature control are discussed. We obtain GaInAs layers with a total variation in lattice mismatch of less than 330 ppm along a 46 mm wafer diameter. This is almost independent of beam geometry. Quaternary layers with λ = 1.558 μm exhibit a total variation in lattice mismatch of less than 190 ppm along a 46 mm wafer diameter. The shift in a 300 K PL wavelength is below the resolution limit of 1 nm across the entire wafer area. Using eccentric 3 × 2 inch multiwafer geometry we obtain GaInAs with a total variation of 900 ppm along the wafer diameter in the radial substrate holder direction and 350 ppm from centre to edge perpendicular to this direction.

This study reports on the growth of GaInAs and GaInAsP single layers and heterostructures by metalorganic MBE (MOMBE) using trimethylindium (TMI), triethylgallium (TEG), arsine (AsH3) and phosphine (PH3) as starting materials. The growth parameters were optimized for a temperature range where also high quality InP is available. Ternary and quaternary layers exhibiting excellent uniformity across a wafer diameter of 3 inches were obtained with regard to layer thickness (≤1.5%) and material composition. SIMS measurements on GaInAs/InP and GaInAsP/InP double heterostructures revealed even for the problematic element As an abrupt modulation of about three orders of magnitude or more depending on the structure.

The MOCVD of AlGaAs and GaAs from coordinatively saturated group III source materialsi.e. 1–3-dimethyl-aminopropyl-l-galla-cyclohexane ((C5H10)Ga(C2N(CH3 2) and the corresponding Al compound) was investigated. It was demonstrated that these precursors, which are inherently free of alkoxy contamination, are suitable for epitaxial growth of GaAs layers and structures of GaAs/AlGaAs. For comparison, data achieved with TEA (Al(C2H5)3) or TiBA (Ali(C4H9)3) and TEG (Ga(C2H5)3) are presented. A basic finding of this study is that due to the low thermal stability of TEA, TiBA and TEG the layers grown from these compounds suffer from insufficient homogeneity of layer thickness and composition. In contrast, the coordinatively saturated compounds show a reactivity suitable for large area growth. Additionally, intrinsic impurity (N, C) uptake appears to be low and electrical as well as PL data show the satisfactory quality of GaAs and AlGaAs layers grown from this new type of precursors. Specifically, a reduction of oxygen incorporation compared to growth from the standard trialkyls is indicated by PL measurements on layers grown at different temperatures.

This paper describes a systematic study on the growth of InP by metalorganic MBE (MOMBE) using trimethylindium (TMI) and phosphine (PH3) as starting materials. InP layers with free electron concentrations as low as 2×1014 cm-3 and 77 K Hall mobilities up to 132,000 cm2/V·s were obtained. The excellent optical properties of the layers are demonstrated by photoluminescence spectra which are dominated by well resolved excitonic transitions. The donor bound exciton recombinations are detectable up to the 6th component and show linewidths of less than 0.08 meV.

The authors report on the growth of high quality InP by metal organic molecular beam epitaxy (MOMBE). InP layers were grown exhibiting Hall mobilities of up to 132000 cm/sup 2//Vs at T=77K with a background free electron concentration of around 2*10/sup 14/ cm/sup -3/. These good electrical results were obtained along with a high optical quality.<>